Development of 65 X 1 uncooled membrane-type microbolometer array

Malyarov, V. G.; Khrebtov, I. A.; Smirnov, A. D.; Raguzina, L. S.; Zerov, V. Yu.; Kulikov, Yu. V.; Shaganov, I. I.

doi:10.1117/12.407759

Cited by 1 publication

(2 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…These microbolometers are of interest in IR imaging for defence and space applications [1,2]. So far, several materials, apart from thin films of vanadium oxide [3][4][5][6][7][8][9][10][11], have been studied as a sensing element for bolometers, such as metal films [12] and semiconductors, for example, YBaCuO [2,13] and Si-Ge alloys [14]; among them, VO x thin films have shown considerable promise.…”

Section: Introductionmentioning

confidence: 99%

“…Thus, proper mixed phase 3 Author to whom any correspondence should be addressed. VO x films possess room-temperature resistivity convenient for matching bolometers to the readout electronics and a high TCR [10] suitable for high sensitivity of the microbolometers (MBs). The mixed phases of VO x thin films with appropriate concentrations of VO 2 and V 2 O 5 phases can be grown by a variety of physical vapour deposition techniques.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Nano-vanadium oxide thin films in mixed phase for microbolometer applications

Subrahmanyam

Reddy

Nagendra

2008

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

Among the several phases of vanadium oxide, mixed phases of VO2 and V2O5 are preferred for uncooled micro-bolometers with low noise. The aim of this investigation is to achieve mixed phase VO2 and V2O5 thin films with nanometre grain sizes and high temperature coefficient of resistance (TCR). Since the phase depends upon the oxygen reactivity, these vanadium oxide thin films are prepared by reactive electron beam evaporation at different oxygen flow rates and substrate temperatures. The mixed phases have been evaluated through x-ray diffraction and x-ray photo emission studies. The temperature dependence of resistance has shown that the films grown at 473 K with 2.8 × 10−5 mbar chamber pressure of oxygen (VO2 : V2O5 ratio of 36 : 64) have the highest TCR of −3.2 K−1 with a reasonable low resistance (120 Ω/square).

show abstract