Development of 60kV Pulse Power Generator Based on IGBT Stacks for Wide Application

Ryoo, Hong-Je; Kim, J.S.; Rim, Geun-Hie; Sytykh, D.; Gussev, G.

doi:10.1109/modsym.2006.365298

Cited by 13 publications

(14 citation statements)

References 7 publications

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“…By doing so, there is a limit to the decreasing the rising time. To overcome this limit, the study on the solid-state pulsed power modulator based on power cells connected in a series has been conducted [14], [15]. When compared to [11], much more rapid rising time can be achieved.…”

Section: Introductionmentioning

confidence: 99%

“…It can be configured with a charging inverter and pulse generator part. For the pulse generator part, a novel gate driver has been proposed to protect the pulsed power modulator from the arcing condition [14], [15]. By adopting an IGBT which can handle 1200 A for a short time, rising time is limited at 300 ns [14].…”

Section: Introductionmentioning

confidence: 99%

“…For the pulse generator part, a novel gate driver has been proposed to protect the pulsed power modulator from the arcing condition [14], [15]. By adopting an IGBT which can handle 1200 A for a short time, rising time is limited at 300 ns [14]. However, a rapid rising time of less than 100 ns, a high repetition rate, a relatively short pulse width, and high stability are required for the environmental application [6].…”

Section: Introductionmentioning

confidence: 99%

“…Last, a modified gate driver excluding short protection is suggested. Since pulse width is relatively short for the environmental application, short protection suggested in [14], [15] is not necessary.…”

Section: Introductionmentioning

confidence: 99%

“…In particular, a series-loaded resonant (SLR) inverter operating in discontinuous conduction mode (DCM) has been adopted to generate 60 kV of pulsed power [14]. It shows a reliable operation even at light load condition since a SLR operating in DCM plays the role of the current source, but it has a higher conduction loss disadvantage due to a relatively large peak current compared to the continuous conduction mode (CCM) [16], [17].…”

Section: Introductionmentioning

confidence: 99%

See 4 more Smart Citations

Design of a High-Efficiency 40-kV, 150-A, 3-kHz Solid-State Pulsed Power Modulator

Ryoo²,

Jang³

et al. 2012

IEEE Trans. Plasma Sci.

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This paper deals with the detailed design of a pulsed power modulator using insulated gate bipolar transistor (IGBT) switches for industrial applications. Output specifications of the proposed modulator are as follows: variable output pulse voltage 1 ∼ 40 kV; pulse width 0.5 ∼ 5 μs; maximum pulse repetition rates 3 kHz, and average output power of 13 kW. The proposed pulsed power modulator consists of a high-voltage capacitor charger based on a high-efficiency resonant inverter and pulse generator part including a series of connected 24 pieces power cells. To verify the proposed design, PSpice modeling was performed. Finally, experimental results proved the reliability and robustness of the proposed solid-state pulsed power modulator.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Design of a High-Efficiency 40-kV, 150-A, 3-kHz Solid-State Pulsed Power Modulator

Ryoo²,

Jang³

et al. 2012

IEEE Trans. Plasma Sci.

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A novel multi‐output high‐voltage‐isolated power supply system for semiconductor device series‐connected switches

Hóu

Zhu

et al. 2017

IEEJ Transactions Elec Engng

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This paper presents a novel scheme of a multi-output power supply for solid-state switches based on series-connected semiconductor devices. By using the loosely transforming method, the system can realize high-voltage isolation and a compact size, and its application range can be easily expanded to modular designed switch stacks for higher power ratings. The circuit structure and working principles are described. Based on the system operating equations, the design methodology is proposed and applied for parameter specification of a power supply system of two series-connected switch stacks containing 20 outputs. Detailed calculations are given, and experimental results prove the feasibility of the proposed scheme.

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Synchronous drive circuit with current limitation for solid‐state pulsed power modulators

Rao

Zeng

Jiang

et al. 2020

IET Power Electronics

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Recently, solid-state pulsed power modulators (SSPPMs) are widely used in pulsed power applications. Due to the relatively low rated voltage and rated current of semiconductor switches, a single SSPPM usually consists of hundreds of power switches which work at different voltage potentials. Therefore, the synchronous and isolated driving of so many switches is a very challenging task in the design of SSPPMs. Here, a very simple but powerful synchronous drive circuit with current limitation is proposed for a solid-state Marx generator. It spares the use of isolated power supply for drives, and the negative bias voltage enhances the electromagnetic compatibility. Moreover, the proposed circuit can flexibly change the value of clamped current according to practical requirements. This drive circuit can be utilised in other types of SSPPMs. The operation principle i.e. the design concept of the pulsed power system is given in detail and the feasibility is verified experimentally.

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Development of 60kV Pulse Power Generator Based on IGBT Stacks for Wide Application

Cited by 13 publications

References 7 publications

Design of a High-Efficiency 40-kV, 150-A, 3-kHz Solid-State Pulsed Power Modulator

Design of a High-Efficiency 40-kV, 150-A, 3-kHz Solid-State Pulsed Power Modulator

A novel multi‐output high‐voltage‐isolated power supply system for semiconductor device series‐connected switches

Synchronous drive circuit with current limitation for solid‐state pulsed power modulators

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