Development of 3kW at 325MHz solid-state RF power amplifier using four power amplifier modules

Ramarao, Bandaru V.; Sonal, S.; Mishra, Jitendra Kumar; Pande, Manjiri; Singh, Pitamber; Kumar, Girish; Mukherjee, Jayanta

doi:10.1016/j.nima.2013.09.053

Cited by 12 publications

(8 citation statements)

References 5 publications

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“…The output stage is the most key model of linear PA, and its performance decides the maximum output power. At radio frequency and Ku-band, the linear PA can reach the required high power by using a power combiner to combine the output of each small-power amplifier module [26,27,28,29,30]. The ultrasound driver that sends square-wave signals uses eight [31] or fourteen [32] MOSFETs in parallel to increase the output power.…”

Section: Configuration Selectionmentioning

confidence: 99%

Broadband Linear High-Power Amplifier Based on the Parallel Amplification Architecture for Electromagnetic Ultrasonic Guided Wave

Zhou

Zheng

2019

Sensors

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The linear power amplifier with high-output power in the broadband frequency is the critical component required by exciting the electromagnetic acoustic transducer (EMAT) to generate ultrasonic guided wave (UGW). The methods to realize the output of a high-power signal in the linear amplification mode and to expand the bandwidth at high-output power are seldom reported. To solve these problems, a power amplifier with differential structure is developed by using the parallel amplification architecture and the broadband feedback circuits. The proposed power amplifier uses a differential structure to suppress the even harmonic waves and remove the disruptions. Each branch of the differential structure consists of five linear power amplifier modules with output terminals connected in parallel to increase the output power. Also, the negative voltage feedback is used to extend the bandwidth of the power amplifier. The experimental results show that the −3 dB bandwidth of the amplifier is from 40 kHz to 2.5 MHz, and the transient output power is greater than 1 kW. The power amplifier can drive the EMATs to generate ultrasonic guided waves. Because of the high-output power and good linearity, the proposed power amplifier has excellent potential for EMAT UGW applications.

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Section: Configuration Selectionmentioning

confidence: 99%

Broadband Linear High-Power Amplifier Based on the Parallel Amplification Architecture for Electromagnetic Ultrasonic Guided Wave

Zhou

Zheng

2019

Sensors

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“…In general, for high power solid-state amplifier development, low power modules typically at 500 Watt or 1.0 kW are assembled together using optimally designed combiners to achieve required high power. Several reports are available related to development and deployment of high power solid state RF amplifiers systems [6][7][8]. However most of the existing systems are at higher frequency particularly in the range of several hundred MHz.…”

Section: Introductionmentioning

confidence: 99%

Development and testing of 37.8 MHz, 3.0 kW RF amplifier system for Radioactive Ion Beam facility at VECC Kolkata

et al. 2022

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This paper reports the design, development and testing of a 3.0 kW, 37.8 MHz radio frequency (RF) amplifier system that has been built by combining four solid-state amplifier modules of 1.0 kW each. The design philosophy and test results of individual components such as driver amplifier, final amplifier modules, power divider/combiner, dual directional coupler (DDC) with system control and interlocks are discussed in detail. Compact 4-way Wilkinson power divider and combiner have been implemented using combination of 50 Ω coaxial cables at this lower frequency of 37.8 MHz. It provides better isolation between the ports and also have high power handling capability. The amplifier has been tested with existing 37.8 MHz quarter-wave resonator type re buncher in the Radioactive Ion Beam (RIB) facility. The performance test results of developed RF system with Re buncher cavity have been presented in this report.

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“…These solid-state device exhibits important advantages over vacuum tubes including higher reliability and longer life, small size and weight, lower cost and easier cooling. Generally, divide and combine topology [6][7][8][9] is used to develop a linear power amplifier delivering larger output power levels than that is achievable from single active devices. This topology has losses due to finite insertion loss, return loss and isolation of RF combiner.…”

Section: Introductionmentioning

confidence: 99%

Development of 5 kW, 1 MHz Solid State RF Pulsed Power Amplifier Using Parallel Configuration of Four LDMOS Transistor at Device and Operated in Single Ended Mode

Deo¹,

Jain²,

Lad³

2019

IJAMT

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A 5 kW and 1 MHz pulsed solid-state RF amplifier has been designed and developed to drive TH581 tetrode tube-based RF amplifier to realize 100 kW pulsed RF source. The driver amplifier is operated with a 1 ms pulse width at a 50 Hz repetition rate. The 5 kW RF power is obtained by operating four Gemini pair LDMOS transistors (VDD=50V) in parallel configuration at the device itself and having single-ended topology with common lumped element based input and output matching network. The amplifier delivers 5 kW RF power when fed by 25 dBm RF input drive from the signal generator. This scheme eliminates the need for RF combiner and divider which results in low loss, high efficiency, lesser number of components, simple and compact design. The measured saturated drain efficiency of the power amplifier is around 62%.

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Development of 3kW at 325MHz solid-state RF power amplifier using four power amplifier modules

Cited by 12 publications

References 5 publications

Broadband Linear High-Power Amplifier Based on the Parallel Amplification Architecture for Electromagnetic Ultrasonic Guided Wave

Broadband Linear High-Power Amplifier Based on the Parallel Amplification Architecture for Electromagnetic Ultrasonic Guided Wave

Development and testing of 37.8 MHz, 3.0 kW RF amplifier system for Radioactive Ion Beam facility at VECC Kolkata

Development of 5 kW, 1 MHz Solid State RF Pulsed Power Amplifier Using Parallel Configuration of Four LDMOS Transistor at Device and Operated in Single Ended Mode

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