2015
DOI: 10.1364/jot.82.000837
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Development and study of ZnO:In optical scintillation ceramic

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Cited by 9 publications
(8 citation statements)
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“…Therefore, the indium doping of ZnO ceramics leads to the decrease of PL α parameter in 15 times. Here it can be noted that calculated from [14] for 0.13 wt% In doped ZnO ceramics X-ray luminescence parameter α was even decreased by 85 times compared with undoped. In the undoped ZnO ceramics disseminated vacancies remain inside grains due to slow volume diffusion processes at 1150 ºC and large distance to probable sinks in the coarse grain microstructure.…”
Section: Microstructure Of Ceramicsmentioning
confidence: 69%
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“…Therefore, the indium doping of ZnO ceramics leads to the decrease of PL α parameter in 15 times. Here it can be noted that calculated from [14] for 0.13 wt% In doped ZnO ceramics X-ray luminescence parameter α was even decreased by 85 times compared with undoped. In the undoped ZnO ceramics disseminated vacancies remain inside grains due to slow volume diffusion processes at 1150 ºC and large distance to probable sinks in the coarse grain microstructure.…”
Section: Microstructure Of Ceramicsmentioning
confidence: 69%
“…The indium in the form of indium oxide (UHP, Russia) was introduced by mechanical mixing with the original ZnO powder during 40 min at 293K. Ceramics of undoped and 0.13 wt% In doped ZnO were fabricated by uniaxial hot pressing sintering in vacuum at temperature 1150 °C and P = 100-200 MPa for 60 min [14]. Microstructures were investigated by scanning electron microscopy (SEM, LYRA, Tescan, Oxford, HV:15-40 kV) with energy dispersive X-ray spectroscopy (EDS, Eagle III XPL), transmission electron microscopy (TEM, FEI, Tecnai, GF20) and optical microscopy (Eclipse L150, Nicon).…”
Section: Experimental Partmentioning
confidence: 99%
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“…The presence of the gallium dopant changes the character of the microstructure of the ZnO ceramic, although not so radically as is observed when it is doped with indium [15]. Subdivision and change of the morphology of the grains occurs.…”
Section: Resultsmentioning
confidence: 96%
“…, 也严重阻碍了非立方体系透明陶瓷的发展。 目前研究主要集中在晶粒尺寸与织构度对非立 方体系透明陶瓷透过率的影响 [2][3][4][5][6] 。对于 Al 2 O 3 透明 陶瓷, 人们已经开展较多关于晶粒尺寸影响透过率 的研究 [3][4][5][6] 。Apetz 等 [3] 在无烧结助剂添加的情况下, 制得在 600 nm 处透过率在 70%以上的氧化铝透明 陶瓷(厚度为 0.8 mm), 其晶粒尺寸仅为 0.3 μm。 Krell 等 [4] 也报道了相似的实验结果, 同时他们采用 瓷的探索研究提供了实验基础。 ZnO 是迄今为止发现衰减时间最短的闪烁材 料 [7] (~400 ps), 在快衰减闪烁探测领域具有良好的 应用前景, 使得透明 ZnO 陶瓷的研究逐渐引起人们 的重视 [8][9] [14] , 可表示为:…”
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