Development and Prospects of Halide Perovskite Single Crystal Films

Abstract

Halide perovskite single crystal (HPSC) films have demonstrated extraordinary performance in solar cells, photodetectors, and lighting applications, owing to the high carrier mobility, long carrier diffusion length, tunable bandgap, and large light absorption coefficients of these materials. Here, the recent development of the major HPSC thin films is reviewed systematically, including MAPbI3, α‐FAPbI3, MAPbBr3, CsPbBr3, with special emphasis on different classes of fabrication methods and thin‐film characteristics. Finally, the conclusion and prospects in this field are discussed in detail. It is anticipated that the HPSC thin films will lead to a compelling future for the rising electronic applications.

Enhanced On–Off Ratio for Ni(OH)2·0.75H2O-MAPbBr3-Based Photodetectors

“…29,33−36 Liu et al successfully prepared optoelectronic devices with fewer defects by single-crystal growth, which greatly improved the optoelectronic performance of the devices due to better grain boundaries and defects in single-crystal materials. 36 Although single crystal has significant advantages in photovoltaic performance, the preparation of single crystal is not only time-consuming and costly but also difficult to control the size and morphology, which limit its large-scale application. 29,37,38 All of the above works have significantly increased the photocurrent of the material, but less has been done on the modulation of the dark current of the device.…”

“…Organic–inorganic halide perovskites (OIHPs) are of great interest to researchers because of their unique optoelectronic properties. − MAPbX 3 are representative of OIHPs, which can adjust the band gap of the material by simple changes of halogen elements and thus can achieve different responses to light. − MAPbBr 3 has a high light absorption capacity and a simple spinning process, and it only needs a very low annealing temperature to form a film after spinning, so it is widely used as a light conversion material for solar cells, photodetectors, and other devices. ,− However, the excessive defects and grain boundaries of MPbBr 3 after film formation will cause the dark current of the material to become larger, resulting in a larger dark current in the devices of the prepared material, which affects the optoelectronic performance of the material. − Therefore, researchers have worked on the preparation of single crystals, doping other elements, or interfacial modification to enhance the light absorption in the visible range and to effectively reduce defects and improve the optoelectronic performance of the device. ,− Among these, preparation of single crystals is an excellent method that has been widely studied. ,− Liu et al successfully prepared optoelectronic devices with fewer defects by single-crystal growth, which greatly improved the optoelectronic performance of the devices due to better grain boundaries and defects in single-crystal materials . Although single crystal has significant advantages in photovoltaic performance, the preparation of single crystal is not only time-consuming and costly but also difficult to control the size and morphology, which limit its large-scale application. ,, …”

Solution-Growth Liquid-Phase Epitaxy of CsPbBr3 on NaCl by Optimizing the Substrate Dissolution

“…The vast majority of present research on perovskite-halide epitaxy was conducted on stable substrates such as GaN, PbS, , or SrTiO 3 . To our knowledge, epitaxial films on soluble substrates were only obtained with vapor phase epitaxy in a vacuum or inert atmosphere to protect the surface , or for bulk crystal and single crystalline films growth by immersing the substrate in the solvent. ,, Solution-LPE in evaporation mode on a soluble substrate was reported by Ji et al showing a great improvement in the device performance, even without obtaining a full 2D continuous film. However, the paper did not go into depth into epitaxial growth details and was mainly focused on devices.…”

Room Temperature Epitaxy of CH3NH3PbI3 Halide Perovskite by Pulsed Laser Deposition

“…Although bulk single crystalline MHP have allowed for a deeper understanding of fundamental material properties, the growth and study of single-crystal MHPs in the thin film form have been less explored. 2,[13][14][15][16][17] Epitaxy is the only route to achieve a transition from polycrystalline MHPs to single-oriented, single-domain MHP thin films. Inspiration for undertaking epitaxy as a well-controlled tool for further material advancements can be drawn from the growth of epitaxial III-V compound semiconductors and perovskite oxides.…”

“…Additionally, PLD has been used to demonstrate the epitaxial growth of inorganic halide perovskites such as CsPbBr3, and CsPb(IxClyBr1-x-y)3, yet in all cases temperatures above 100℃ were needed. 17,36 . Here, we present the epitaxial growth of methylammonium lead iodide (CH3NH3PbI3), commonly referred to as MAPbI3, on a closely lattice-matched singlecrystalline potassium chloride (KCl) substrate using PLD at room temperature (RT).…”