Development and progress in piezotronics

Wen, Xiaonan; Wu, Wenzhuo; Pan, Caofeng; Hu, Youfan; Yang, Qing; Wang, Zhong Lin

doi:10.1016/j.nanoen.2014.10.037

Cited by 90 publications

(64 citation statements)

References 99 publications

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“…The piezoelectric polarization in the BP crystal along the armchair orientation can modulate carrier transport just like the gate modulation of a transistor. This phenomenon has also been reported in other piezoelectric semiconductors such as ZnO and MoS 2 . For the I–V curve of the zigzag oriented BP device in Figure e, the current increases symmetrically with increasing applied strain, where the symmetric modulation can be explained by the piezoresistive effect dominating in a zigzag oriented device (Figure S2a,b, Supporting Information).…”

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confidence: 81%

Piezoelectricity in Multilayer Black Phosphorus for Piezotronics and Nanogenerators

Wan

et al. 2020

Advanced Materials

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Recently, piezoelectric characteristics have been a research focus for 2D materials because of their broad potential applications. Black phosphorus (BP) is a monoelemental 2D material predicted to be piezoelectric because of its highly directional properties and non‐centrosymmetric lattice structure. However, piezoelectricity is hardly reported in monoelemental materials owing to their lack of ionic polarization, but piezoelectric generation is consistent with the non‐centrosymmetric structure of BP. Theoretical calculations of phosphorene have explained the origin of piezoelectric polarization among P atoms. However, the disappearance of piezoelectricity in multilayer 2D material generally arises from the opposite orientations of adjacent atomic layers, whereas this effect is limited in BP lattices due to their spring‐shaped space structure. Here, the existence of in‐plane piezoelectricity is experimentally reported for multilayer BP along the armchair direction. Current–voltage measurements demonstrate a piezotronic effect in this orientation, and cyclic compression and release of BP flakes show an intrinsic current output as large as 4 pA under a compressive strain of −0.72%. The discovery of piezoelectricity in multilayer BP can lead to further understanding of this mechanism in monoelemental materials.

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confidence: 81%

Piezoelectricity in Multilayer Black Phosphorus for Piezotronics and Nanogenerators

Wan

et al. 2020

Advanced Materials

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“…By applying a new detection scheme, we have demonstrated magnetization control by the electric field via the inverse piezoelectric effect and developed a theory describing the PEME quantitatively. In this way, our work bridges two fields of research developed so far independently: piezoelectricity of wurtzite III–V and II–VI semiconductors1 and electrical control of magnetization in hybrid and composite magnetic structures containing piezoelectric components2345.…”

Section: Discussionmentioning

confidence: 73%

“…For instance, various nanoelectromechanical and energy harvesting devices employing wurtzite II–VI and III–V semiconductor compounds have recently been demonstrated1. At the same time, nanocomposite23 or hybrid45 piezoelectric/magnetic systems allow for the electric control of magnetization.…”

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confidence: 99%

Stretching magnetism with an electric field in a nitride semiconductor

et al. 2016

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The significant inversion symmetry breaking specific to wurtzite semiconductors, and the associated spontaneous electrical polarization, lead to outstanding features such as high density of carriers at the GaN/(Al,Ga)N interface—exploited in high-power/high-frequency electronics—and piezoelectric capabilities serving for nanodrives, sensors and energy harvesting devices. Here we show that the multifunctionality of nitride semiconductors encompasses also a magnetoelectric effect allowing to control the magnetization by an electric field. We first demonstrate that doping of GaN by Mn results in a semi-insulating material apt to sustain electric fields as high as 5 MV cm−1. Having such a material we find experimentally that the inverse piezoelectric effect controls the magnitude of the single-ion magnetic anisotropy specific to Mn3+ ions in GaN. The corresponding changes in the magnetization can be quantitatively described by a theory developed here.

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“…Wang et al utilized the combination of piezoelectric and semiconducting properties to tune electrostatic potential barriers at metal‐ZnO Schottky junctions by applying mechanical stress to single crystalline ZnO nanowires. This has sparked research efforts for the development of new applications such as strain‐triggered transistors, diodes or sensors . In a similar manner, double Schottky barriers at ZnO varistor grain boundaries can be manipulated by stress induced piezoelectric polarization charges .…”

Section: Introductionmentioning

confidence: 99%

Segregation and properties at curved vs straight (000) inversion boundaries in piezotronic ZnO bicrystals

et al. 2019

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TEM and SEM investigations of ZnO bicrystal interfaces were undertaken with an aim to study the correlation of local grain‐boundary structure, segregation, and electrical transport perpendicular to the interface. To this end, varistor‐like ZnO bicrystals with piezotronic characteristics were chosen with (0001¯)║(0001¯) tail‐to‐tail orientation with respect to the c‐axis. In order to contrast different local grain‐boundary structures with different coherency and segregation of bismuth, but identical macroscopic polarization state, two complementary processing techniques were applied. A diffusion‐bonded bicrystal with an intermediate thin film containing Zn–Bi–Co–O provided a straight interface as reference. In contrast, a ZnO bicrystal prepared by epitaxial solid‐state transformation was manufactured by bonding two ZnO single crystals with a 100 µm thick polycrystalline ZnO varistor material with a typical dopant composition including bismuth and cobalt. This structure was annealed to the point that a bicrystal was formed with the varistor concentration at the boundary, which was strongly curved due to the polycrystalline microstructure still providing a shadow image at the interface. The results highlight a distinct correlation between local interfacial morphology, degree of segregation of bismuth, and degree of nonlinearity of the electrical transport across the interface.

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Development and progress in piezotronics

Cited by 90 publications

References 99 publications

Piezoelectricity in Multilayer Black Phosphorus for Piezotronics and Nanogenerators

Piezoelectricity in Multilayer Black Phosphorus for Piezotronics and Nanogenerators

Stretching magnetism with an electric field in a nitride semiconductor

Segregation and properties at curved vs straight (000) inversion boundaries in piezotronic ZnO bicrystals

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