Development and characterization of MSM UV photodetector based on gallium oxide nanostructures

A Strategic Review on Gallium Oxide Based Deep‐Ultraviolet Photodetectors: Recent Progress and Future Prospects

“…[57,111] In addition bi-phase α/β nanoplates for UV detection have also been fabricated. [112] Table 1 summarizes some of the photodetectors based on the different crystalline and amorphous phases of gallium oxide along with their key figures-of-merit.…”

“…Although Au is mostly used as a catalyst for the growth of gallium oxide NS, [44,116] the use of Ag [196] as a catalyst or even seed-free growth has also been reported. [112] The growth of doped nanostructures have been studied with the incorporation of Ge and Sn into the NSs to either achieve n-type doping or tune the bandgap of gallium oxide. [197][198] Fabrication of nanostructure based DUV PDs has also been done by growing α/β biphase nanorods array.…”

A Heterostructured Graphene Quantum Dots/β-Ga2O3 Solar-Blind Photodetector with Enhanced Photoresponsivity

“…It is worth noting that the I ph of these two devices at 200 nm (6.2 eV) is less than that at 250 nm (4.96 eV). This may be because the absorption peak matches the direct excitonic transition in β-Ga 2 O 3 at 250 nm, leading to the higher optical absorption, , which in turn contributes to the increase in the I ph . However, the I ph of these two devices at 300 nm (4.13 eV) is also lower than that at 250 nm.…”

“…In order to realize the fabrication of high-performance solar-blind PDs, various wide-bandgap semiconductor materials, such as AlN, diamond, BN, ZnO, ZnMgO, AlGaN, transition metal oxides, and β-Ga 2 O 3 , have attracted more and more attention. − Specifically, AlN, diamond, and BN are commonly used materials for vacuum-ultraviolet PDs, , while quasi-two-dimensional (2D) β-Ga 2 O 3 is considered as one of the most ideal candidates for solar-blind PDs because of its advantages such as a direct and ultrawide bandgap (∼4.9 eV), a high breakdown electric field (∼9 MV/cm), and excellent thermal and chemical stability. , The β-Ga 2 O 3 materials used to prepare solar-blind PDs mainly include thin films, nanowires, bulk materials, and nanostructures. − In addition, several main types of solar-blind DUV PDs based on β-Ga 2 O 3 materials have been reported, including the photoconductive type, the metal–semiconductor–metal (MSM) type, the Schottky diode, the p–n diode, and the phototransistor type. ,− Among various types of devices, the MSM-type PDs have always attracted intensive attention due to their simple preparation process and good compatibility with the traditional microfabrication process. However, it is well-known that the major drawback of the MSM PDs is their low responsivity. , Thus, attempts to improve their low responsivity have attracted intensive attention. Oh et al investigated the performance of solar-blind MSM PDs using mechanically exfoliated β-Ga 2 O 3 flakes.…”

“…However, it is well-known that the major drawback of the MSM PDs is their low responsivity. 29,30 Thus, attempts to improve their low responsivity have attracted intensive attention. Oh et al 4 investigated the performance of solar-blind MSM PDs using mechanically exfoliated β-Ga 2 O 3 flakes.…”