Development and characterization of a DMAPS chip in TowerJazz <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" id="d1e141" altimg="si4.svg"><mml:mrow><mml:mn>180</mml:mn></mml:mrow></mml:math>
 <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" id="d1e149" altimg="si5.svg"><mml:mi mathvariant="normal">nm</mml:mi></mml:math> technology for high radiation environments

Bespin, C.; Berdalovic, I.; Caicedo, I.; Cardella, R.; Dingfelder, J.; Flores, Leyre; Hemperek, T.; Krüger, H.; Kugathasan, T.; Tobon, C. Marin; Moustakas, Konstantinos; Pernegger, H.; Piro, F.; Riedler, P.; Snoeys, W.; Wermes, N.

doi:10.1016/j.nima.2022.167189

Cited by 4 publications

(2 citation statements)

References 13 publications

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“…While the mean threshold stays basically the same, the dispersion could be reduced by a factor of almost 5. Both the mean threshold and threshold dispersion are significantly lower than in TJ-Monopix1, where losses in hit detection efficiency could be observed due to too large thresholds [8]. The corresponding histogram of the electronic noise is depicted in fig.…”

Section: Injection-based Threshold and Noise Measurementsmentioning

confidence: 90%

“…Additionally, chips have been produced on Czochralski silicon to increase the available depletable volume compared to the thickness of the epitaxial layer (O (10 µm)). Measurements on Czochralski silicon chips in TJ-Monopix1 showed a further increase in hit detection efficiency after irradiation [8]. TJ-Monopix2 follows a small collection electrode approach with a pixel capacitance of about 3 fF.…”

Section: Design Of Tj-monopix2mentioning

confidence: 98%

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Charge collection and efficiency measurements of the TJ-Monopix2 DMAPS in 180 nm CMOS technology

Bespin¹,

Caicedo²,

Dingfelder³

et al. 2023

Proceedings of 10th International Workshop on Semiconductor Pixel Detectors for Particles and Imaging — PoS(Pixel2022)

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Monolithic CMOS pixel detectors have emerged as competitive contenders in the field of highenergy particle physics detectors. The use of commercial processes offers high-volume production of such detectors. A series of prototypes has been designed in a 180 nm Tower CMOS process with depletion of the sensor material and a column-drain readout architecture. The latest iteration, TJ-Monopix2, features a large 2 × 2 cm 2 matrix consisting of 512 × 512 pixels with 33.04 µm pitch. A small collection electrode design aims at low power consumption and low noise while the radiation tolerance for high-energy particle detector applications needs extra attention. With a goal to reach radiation tolerance to levels of NIEL damage of 1 × 10 15 1 MeV n eq /cm 2 , a modification of the standard process has been implemented by adding a low-dosed n-type silicon implant across the pixel in order to allow for homogeneous depletion of the sensor volume. Recent lab measurements and beam tests were conducted for unirradiated modules to study electrical characteristics and hit detection efficiency.

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Section: Injection-based Threshold and Noise Measurementsmentioning

confidence: 90%

Section: Design Of Tj-monopix2mentioning

confidence: 98%

Charge collection and efficiency measurements of the TJ-Monopix2 DMAPS in 180 nm CMOS technology

Bespin¹,

Caicedo²,

Dingfelder³

et al. 2023

Proceedings of 10th International Workshop on Semiconductor Pixel Detectors for Particles and Imaging — PoS(Pixel2022)

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Simulation and first characterization of MAPS test structures with gain for timing applications

Corradino,

Neubüser,

Giovanazzi

et al. 2024

J. Inst.

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Thanks to their advantages in terms of easiness of manufacturing and reduced production costs, Monolithic Active Pixel Sensors (MAPS) represent an appealing solution for radiation imaging applications, which require to cover large areas with pixelated detectors. In the next upgrade of the ALICE detector, that will have to deal with the higher event rate resulting from the planned increase in the LHC luminosity, it is foreseen to include two additional sensor layers to perform Time of Flight (ToF) measurements. Trying to reach the challenging timing resolution required by the ALICE ToF layers, an internal gain layer has been included in the test structures of the third engineering run of the ARCADIA project to improve the timing performance of this MAPS technology. In the paper we will present an overview of the main results obtained from the electrical and the dynamic characterization of the fabricated devices, which have been compared with the behavior expected from the preliminary TCAD simulations carried out in the design phase. The experimental results confirmed the feasibility of embedding a gain layer in the ARCADIA 110 nm CMOS technology to develop monolithic LGADs.

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Advancements and applications of monolithic pixel detector

DENG,

YIN,

WANG

et al. 2023

Sci. Sin.-Phys. Mech. Astron.

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Development and characterization of a DMAPS chip in TowerJazz 180 nm technology for high radiation environments

Cited by 4 publications

References 13 publications

Charge collection and efficiency measurements of the TJ-Monopix2 DMAPS in 180 nm CMOS technology

Charge collection and efficiency measurements of the TJ-Monopix2 DMAPS in 180 nm CMOS technology

Simulation and first characterization of MAPS test structures with gain for timing applications

Advancements and applications of monolithic pixel detector

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