2009 11th Electronics Packaging Technology Conference 2009
DOI: 10.1109/eptc.2009.5416490
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Development and characterisation of high electrical performances TSV for 3D applications

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Cited by 14 publications
(2 citation statements)
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“…In addition, the channels in the passive interposer should be standardized to make modular SoC design. Hence, there is increase in research of active interposer [16,4,2,17,18,19,20,21] both in industry and academia. We also consider an active interposer substrate for designing the interposer network.…”
Section: Modular 25d Soc Integrationmentioning
confidence: 99%
“…In addition, the channels in the passive interposer should be standardized to make modular SoC design. Hence, there is increase in research of active interposer [16,4,2,17,18,19,20,21] both in industry and academia. We also consider an active interposer substrate for designing the interposer network.…”
Section: Modular 25d Soc Integrationmentioning
confidence: 99%
“…The combination of 3D integration and NoC technologies provides a new horizon for on-chip interconnect design. 3D NoC offers higher bandwidth, smaller form factor, shorter wire length, lower power dissipation, and better performance than traditional 2D NoCs [5]. 3D integration by Through-silicon Via (TSV) is currently the most popular choice as a vertical-electrical connection form between tiers which is demonstrated in Fig.…”
Section: Introductionmentioning
confidence: 99%