Development and characterisation of a surface micromachined FET pressure sensor on a CMOS process

Hynes, E.; O'Neill, M.; McAuliffe, D.; Berney, Helen; Lane, W.A.; Kelly, G.; Hill, M.T.

doi:10.1016/s0924-4247(99)00058-8

Cited by 31 publications

(24 citation statements)

References 4 publications

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“…The membrane produces a deformation upon applying a uniform pressure to the sensing cell, resulting in the total capacitance of the NMOS varies. In the saturation region, the drain current, I ds , of the NMOS is given by:

where W and L represent the channel width and length of the NMOS, respectively; μ n is the mobility of the electrons; V t is the threshold voltage and V gs is the gate-to-source voltage [ 3 ]. In accordance with Equation (2) , we know that the drain current, I ds , varies as the capacitance, C t , changes.…”

Section: Structure Of the Pressure Sensormentioning

confidence: 99%

“…The advantages of micro pressure sensors fabricated by MEMS technology include high performance, small size, low cost and easy mass-production. Several micro FET pressure sensors [ 3 - 7 ] have been manufactured by using MEMS technology. For instance, a FET pressure sensor, reported by Hynes et al [ 3 ], was fabricated using a surface micromachining process, in which a polysilicon diaphragm and a sacrificial oxide layer were deposited on the pressure sensing area, and then the sacrificial oxide was removed from beneath the polysilicon diaphragm using HF solution.…”

Section: Introductionmentioning

confidence: 99%

“…The FET pressure sensor integrated circuits on a chip had the advantages of low packaging cost and small chip area. These FET pressure sensors proposed by Hynes et al [ 3 ], Svensson et al [ 4 ], Lysko et al [ 5 ] and Dai et al [ 6 ], did not have integrated wireless circuits on-chip. If the FET pressure sensors could integrate with wireless circuits as wireless pressure sensors they would have more applications, so in this work we have developed a wireless FET pressure sensor based on the commercial CMOS process.…”

Section: Introductionmentioning

confidence: 99%

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Fabrication of Wireless Micro Pressure Sensor Using the CMOS Process

Dai

et al. 2009

Sensors

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In this study, we fabricated a wireless micro FET (field effect transistor) pressure sensor based on the commercial CMOS (complementary metal oxide semiconductor) process and a post-process. The wireless micro pressure sensor is composed of a FET pressure sensor, an oscillator, an amplifier and an antenna. The oscillator is adopted to generate an ac signal, and the amplifier is used to amplify the sensing signal of the pressure sensor. The antenna is utilized to transmit the output voltage of the pressure sensor to a receiver. The pressure sensor is constructed by 16 sensing cells in parallel. Each sensing cell contains an MOS (metal oxide semiconductor) and a suspended membrane, which the gate of the MOS is the suspended membrane. The post-process employs etchants to etch the sacrificial layers in the pressure sensor for releasing the suspended membranes, and a LPCVD (low pressure chemical vapor deposition) parylene is adopted to seal the etch holes in the pressure. Experimental results show that the pressure sensor has a sensitivity of 0.08 mV/kPa in the pressure range of 0–500 kPa and a wireless transmission distance of 10 cm.

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Section: Structure Of the Pressure Sensormentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Fabrication of Wireless Micro Pressure Sensor Using the CMOS Process

Dai

et al. 2009

Sensors

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“…5, because three sensing cells structure are the same. The materials of the membrane are Al (Young's modulus is 70 GPa, Poisson's ratio is 0.3 and mass density is 2679 kg/m3) and silicon dioxide (Young's modulus is 69 GPa, Poisson's ratio is 0.17 and mass density is 2200 kg/m3) [6], and the stress distribution of the membrane at a pressure of 5MPa. …”

Section: Capacitive Pressure Micro-sensor Designmentioning

confidence: 99%

A simple and ultra-low power capacitive pressure micro-sensor sensing system design

Hsueh

Lin

2008

APCCAS 2008 - 2008 IEEE Asia Pacific Conference on Circuits and Systems

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The aim of this paper is design and fabrication of a novel fully integrated capacitive pressure sensor that can be detected pressure for airtight structure of industrial and biomedical application. This paper also presents the characterization of the sensing signal processing system with readout sensing circuits. The pressure sensor has 42 sensing cells array, each Cs (sensor capacitance) is connects by 14 parallel sensing cells. The HSPICE is used to evaluate the characteristics of the circuits, and the CoventorWare is utilized to simulate the behaviors of the pressure sensor. The TSMC 0.35μm 2P4M CMOS process is employed for sensor fabrication. The circuit has a pre-simulated initial frequency at 301.5 MHz under no applied force. When under the pressure, the total frequency shift is 179.6 MHz with a corresponding mechanical displacement of 2.64μm and the Cs change to 448.14 fF. The entire chip power dissipation is about 3.2 mW.

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“…This feature makes the MOS transistor applied to the many micro sensors as well as the circuit unit. The pH sensor (Cane´et al 1997;Pourciel-Gouzy et al 2004;Martinoia et al 2005), the charge sensor (Kim et al 2004), the pressure sensor (Hynes et al 1999) and the gas sensor (Dwivedi et al 2000) are the representative sensors.…”

Section: Sensing With Mos Transistormentioning

confidence: 99%

Fabrication and characterization of 3-Dimensional MOS transistor tip integrated micro cantilever

et al. 2006

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We fabricate and characterize a three-dimensional (3-D) MOS (metal-oxide-semiconductor) transistor tip integrated micro cantilever to measure the surface properties. The 3-D MOS transistor tip is fabricated on the front side end of the cantilever, and the cantilever itself works as a tip. These features make the device possible to investigate hard-detecting parts such as the deep trenches and the sidewalls of the structure. The MOS transistor tip has other advantages such as the high operation speed, the high sensitivity, and the reduction of the required equipments like the lock-inamplifier. The MOS transistor tip is fabricated threedimensionally, utilizing the lateral diffusion and the anisotropic wet etching with TMAH solution, since the etch rate of {211} plane is much higher than those of {100} or {111} planes. The gate area is formed by selfaligned technique, using crystallographic dependant wet etching. The well-known convex corner compensation pattern is used for the gate length control during the tip fabrication process. The characteristics of the fabricated device are measured with respect to the various electric signals and the results show the well-established detection properties.

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Development and characterisation of a surface micromachined FET pressure sensor on a CMOS process

Cited by 31 publications

References 4 publications

Fabrication of Wireless Micro Pressure Sensor Using the CMOS Process

Fabrication of Wireless Micro Pressure Sensor Using the CMOS Process

A simple and ultra-low power capacitive pressure micro-sensor sensing system design

Fabrication and characterization of 3-Dimensional MOS transistor tip integrated micro cantilever

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