Developing Graphene‐Based Moiré Heterostructures for Twistronics

Abstract

Graphene-based moiré heterostructures are strongly correlated materials, and they are considered to be an effective platform to investigate the challenges of condensed matter physics. This is due to the distinct electronic properties that are unique to moiré superlattices and peculiar band structures. The increasing research on strongly correlated physics via graphene-based moiré heterostructures, especially unconventional superconductors, greatly promotes the development of condensed matter physics. Herein, the preparation methods of graphene-based moiré heterostructures on both in situ growth and assembling monolayer 2D materials are discussed. Methods to improve the quality of graphene and optimize the transfer process are presented to mitigate the limitations of low-quality graphene and damage caused by the transfer process during the fabrication of graphene-based moiré heterostructures. Then, the topological properties in various graphene-based moiré heterostructures are reviewed. Furthermore, recent advances regarding the factors that influence physical performances via a changing twist angle, the exertion of strain, and regulation of the dielectric environment are presented. Moreover, various unique physical properties in graphene-based moiré heterostructures are demonstrated. Finally, the challenges faced during the preparation and characterization of graphene-based moiré heterostructures are discussed. An outlook for the further development of moiré heterostructures is also presented.

Recent Progress in 1D Contacts for 2D‐Material‐Based Devices

“…[209] Interesting quantum phenomena can be revealed when ultrathin 2D devices work properly with the materials condition where external interferences are minimized. Recent results in areas such as twistronics, valleytronics, and spintronics [22,67,167] using 2D devices to show interesting quantum phenomena utilize a double gate structure in which the edge-contacted source and drain electrodes lead to surface scattering-free charge transport that can be controlled independently from the top and bottom gate electrodes. This is difficult to realize by using the top contact structure.…”

“…As electronic devices continue becoming smaller to the point of reaching the nanometer level, various quantum phenomena that were hidden when the devices were larger are now attributed to interface midgap states (or metal-induced gap states); the enabling of uniform carrier transport across multilayered channels in 2D devices; the fabrication of double gate transistor devices suitable for exploring unique quantum phenomena in 2DMs, for example, changes in Moiré patterns with twisted angles between double layers, [22] fractional quantum Hall effects [23] frictional magneto-Coulomb drag between doublelayers, [24] and the magnetic proximity effect with ferromagnetic metal edge contacts; [25] and the realization of high-density device integration due to each transistor having a reduced footprint compared to top-contacted structures. [26] Although we distinguish the edge contact method from the usual top contact method, some top-contacted interfaces cannot be clearly distinguished from the edge-contacted interfaces.…”

Applications of Graphene in Five Senses, Nervous System, and Artificial Muscles

“…465,466 Here, graphene becomes an ideal matrix for hosting single atom catalysis, 467 and heterostructure photocatalysis, 468 as well as slide support in cryo-electron microscopy. 469 In addition, twistronics was proposed for graphene based heterostructures 470 by van der Waals interaction 471 and superlattices. 472 The standardization of transistors 473,474 and chemiresistors 475 becomes vital prior to the industrial production of sensors.…”

Electronic properties of twisted multilayer graphene

“…In addition to TMG, the explored systems include also twisted superlattices of other 2D layered materials such as graphene on hexagonal boron nitride, graphene on transition-metal dichalcogenide layers, van der Waals moiré superlattices of transition-metal dichalcogenide layers, and so on (e.g. see [35][36][37][38][39][40][41][42] as well as the recent review [43] and references therein). These explorations have also inspired researchers to extendedly apply the twist approach to other physical systems, e.g.…”