Developing an equivalent thermal model for discrete DIODE packages

Ayadi, Moez; Fakfakh, Mohamed Amine; Ghariani, Moez; Nèji, Rafik

doi:10.1016/j.ijthermalsci.2011.03.015

Cited by 6 publications

(6 citation statements)

References 12 publications

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“…The JH interface then uses the computed power losses from the EC physic as input values for HTS to calculate the temperature based on the predefined Equations ( 10) and (11).…”

Section: Generalized Simulation Model Of Selected Semiconductor Diodementioning

confidence: 99%

“…It also eliminates the need for the development of physical prototypes until the final design stage of an electronic component has been reached before mass production. For these facts, it is important that we are informed about the component material properties, because only with proper information is it possible to achieve validated results compared to experimental verification [10][11][12][13][14].…”

Section: Introductionmentioning

confidence: 99%

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Indirect Electro-Thermal Modelling of Semiconductor Diode Using Non-Linear Behavior of Volt-Ampere Characteristic

Frivaldský

Pavelek

2021

Energies

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The aim of the proposed paper is the development of an electro-thermal model of semiconductor component using an indirect modelling approach. The approach is based on the integration of the component’s electrical properties considering non-linear behavior of a V-A characteristic. In this way, the identification of semiconductor material properties considering non-linear dependencies and semiconductor volume is provided. The main aim of the presented approach is simplification of the electro–thermal interaction within finite-element modelling of the semiconductor components. In this way, it is possible to omit more complex boundary definitions and the setting of the semiconductor-based physics. The proposed methodology is presented within the development of a simulation model based on a small high-frequency rectifying diode, taking into account its geometric dimensions and the internal arrangement of its structure. Simulation was performed as a transient analysis, while the results from the steady-state operation for various operational conditions were compared to experimental measurements. Comparison between simulation and experiments is within 5% of the relative error. The achieved results represent appropriate accuracy of model behavior compared to the real operation.

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“…The JH interface then uses the computed power losses from the EC physic as input values for HTS to calculate the temperature based on the predefined Equations ( 10) and (11).…”

Section: Generalized Simulation Model Of Selected Semiconductor Diodementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Indirect Electro-Thermal Modelling of Semiconductor Diode Using Non-Linear Behavior of Volt-Ampere Characteristic

Frivaldský

Pavelek

2021

Energies

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“…The 1D thermal modeling was used to integrate thermal aspects in the design of active and passive components in electronic circuits [13][14][15][16]. Thanks to the simplicity and efficiency of this technique, it becomes increasingly used for the analysis of thermal behavior of electric machine [12], [17], [18].…”

Section: Lumped-circuit Of the Motormentioning

confidence: 99%

One-dimensional Lumped-Circuit for Transient Thermal Study of an Induction Electric Motor

Jebahi

Aloui

Ayadi

2017

IJECE

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<span lang="EN-US">Electrical machines lifetime and performances could be improved when along the design process both electromagnetic and thermal behaviors are taken into account. Moreover, real time information about the device thermal state is necessary to an appropriate control with minimized losses. Models based on lumped parameter thermal circuits are: generic, rapid, accurate and qualified as a convenient solution for power systems. The purpose of the present paper is to validate a simulation platform intended for the prediction of the thermal state of an induction motor covering all operation regimes. To do so, in steady state, the proposed model is validated using finite element calculation and experimental records. Then, in an overload situation, obtained temperatures are compared to finite element’s ones. It has been found that, in both regimes, simulation results are with closed proximity to finite element’s ones and experimental records.</span>

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“…The thermal modelling of the power PIN diode has been studied by various investigators. The one‐dimensional (1D) finite elements technique has been used in [2] to evaluate the thermal equivalent circuit. Other methods also based on the knowledge of the package system materials and physical dimensions are employed in this subject.…”

Section: Thermal Modelmentioning

confidence: 99%

“…Different investigators propose notable electro-thermal models of this component. The analytical and physical models are based on the semiconductor physics equations [2][3][4]. The physical models of the power diode are based on the resolution of the ambipolar diffusion equation (ADE) which describes the nature of the distributed charge in the semiconductor.…”

Section: Introductionmentioning

confidence: 99%

SIMSCAPE electro‐thermal modelling of the PIN diode for power circuits simulation

Mijlad

Elwarraki

Elbacha

2016

IET Power Electronics

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This study introduces a less complex approach for modelling the power PIN diode in MATLAB/SIMULINK software. In this approach, a behaviour modelling methodology is adapted to explore the distributed effect of both the electrical and thermal phenomena within the component. The manufacturer's data are the main source of information. Indeed, all of the modelling parameters are derived from the published data sheets. Moreover, the model validation is obtained by a comparison between the simulation results and the datasheet characteristics given for several tests. The diode model presented in this study is validated from an electro-thermal point of view.

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Developing an equivalent thermal model for discrete DIODE packages

Cited by 6 publications

References 12 publications

Indirect Electro-Thermal Modelling of Semiconductor Diode Using Non-Linear Behavior of Volt-Ampere Characteristic

Indirect Electro-Thermal Modelling of Semiconductor Diode Using Non-Linear Behavior of Volt-Ampere Characteristic

One-dimensional Lumped-Circuit for Transient Thermal Study of an Induction Electric Motor

SIMSCAPE electro‐thermal modelling of the PIN diode for power circuits simulation

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