Deuterium passivation of grain-boundary dangling bonds in silicon thin films

Johnson, N. M.; Biegelsen, D. K.; Moyer, M. D.

doi:10.1063/1.92934

Cited by 229 publications

(57 citation statements)

References 12 publications

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“…It is considered that the bond angle distortion and the lattice relaxation occur simultaneously. In addition, it is probable that the dehydrogenation 9,10) occurs simultaneously by LPX irradiation. These phenomena influence the diffusion of Si atoms.…”

Section: Resultsmentioning

confidence: 99%

Influence of Laser Plasma Soft X-Ray Irradiation on Crystallization of a-Si Film by Infrared Furnace Annealing

et al. 2010

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The influence of laser plasma soft X-ray (LPX) irradiation on crystallization of a-Si film by infrared (IR) furnace annealing is investigated. The crystallization temperature by LPX irradiation followed by IR annealing is lowered down to 420 C and the grain size increases up to 270 nm. This phenomenon is related with the change in characteristics of a-Si film which is generated by the bond distortion and relaxation during the LPX irradiation. It was found that the LPX-irradiated film is constituted by the two different layers and the refractive index of upper layer was lower than that of under layer. The dangling bond density of a-Si film was also decreased by LPX irradiation to a-Si film. From these results, the crystallization mechanism is discussed.

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Section: Resultsmentioning

confidence: 99%

Influence of Laser Plasma Soft X-Ray Irradiation on Crystallization of a-Si Film by Infrared Furnace Annealing

et al. 2010

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“…Experimental estimates of the diffusion constant are numerous and vary widely, [1][2][3][4][5][6][7] sometimes by two orders of magnitude at a given temperature, as can be appreciated from the open circles in Fig. 1(a).…”

mentioning

confidence: 99%

Diffusion of hydrogen in crystalline silicon

Bédard

Lewis

2000

Phys. Rev. B

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The coefficient of diffusion of hydrogen in crystalline silicon is calculated using tight-binding molecular dynamics. Our results are in good quantitative agreement with an earlier study by Panzarini and Colombo [Phys. Rev. Lett. 73, 1636 (1994)]. However, while our calculations indicate that long jumps dominate over single hops at high temperatures, no abrupt change in the diffusion coefficient can be observed with decreasing temperature. The (classical) Arrhenius diffusion parameters, as a consequence, should extrapolate to low temperatures.

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“…In general, grain boundaries can limit the optoelectronic properties of materials due to a high density of dangling bonds and impurity segregation caused by differences in diffusion behavior as compared to the bulk material. [10][11][12] Analyzing our TF-VLS p-InP via a combination of secondary ion mass spectroscopy (SIMS) and capacitance-voltage (CV) profiling revealed that only ~10% of the incorporated Zn was electrically active in our TF-VLS p-InP, leading to the possibility that much of the interstitial Zn accumulates at the interfaces and along grain boundaries. 8 Moreover, the bulk material quality of single crystal InP can differ from thin-film InP as well, which is caused by structural differences inherent to the growth process such as dislocations, twin boundaries and related defects.…”

Section: Introductionmentioning

confidence: 99%

Increased Optoelectronic Quality and Uniformity of Hydrogenated p-InP Thin Films

et al. 2016

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ABSTRACT:The thin-film vapor-liquid-solid (TF-VLS) growth technique presents a promising route for high quality, scalable and cost-effective InP thin films for optoelectronic devices. Towards this goal, careful optimization of material properties and device performance is of utmost interest. Here, we show that exposure of polycrystalline Zn-doped TF-VLS InP to a hydrogen plasma (in the following referred to as hydrogenation) results in improved optoelectronic quality as well as lateral optoelectronic uniformity. A combination of low temperature photoluminescence and transient photocurrent spectroscopy were used to analyze the energy position and relative density of defect states before and after hydrogenation. Notably, hydrogenation reduces the relative intra-gap defect density by one order of magnitude. As a metric to monitor lateral optoelectronic uniformity of polycrystalline TF-VLS InP, photoluminescence and electron beam induced current mapping reveal homogenization of the grain versus grain boundary upon hydrogenation. At the device level, we measured more than 260 TF-VLS InP solar cells before and after hydrogenation to verify the improved optoelectronic properties. Hydrogenation increased the average open-circuit voltage (V OC ) of individual TF-VLS InP solar cells by up to 130 mV, and reduced the variance in V OC for the analyzed devices.

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Deuterium passivation of grain-boundary dangling bonds in silicon thin films

Cited by 229 publications

References 12 publications

Influence of Laser Plasma Soft X-Ray Irradiation on Crystallization of a-Si Film by Infrared Furnace Annealing

Influence of Laser Plasma Soft X-Ray Irradiation on Crystallization of a-Si Film by Infrared Furnace Annealing

Diffusion of hydrogen in crystalline silicon

Increased Optoelectronic Quality and Uniformity of Hydrogenated p-InP Thin Films

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