Deterministic Role of Concentration Surplus of Cation Vacancy over Anion Vacancy in Bipolar Memristive NiO

Sun, Zhong; Zhao, Yongxiang; He, Min; Gu, Lin; Ma, Chao; Jin, Kuijuan; Zhao, Diyang; Luo, Nannan; Zhang, Qinghua; Wang, Na; Duan, Wenhui; Chen, Nan

doi:10.1021/acsami.6b01400

Cited by 30 publications

(24 citation statements)

References 57 publications

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“…Oxygen vacancy induced dark contrast can also be found in the low‐magnification image (see Figure S2 in the Supporting Information). The fact that low P(O 2 ) leads to more oxygen vacancies has also been reported for other oxide materials . Figure b and Figure S3 (Supporting Information) clearly show more pronounced I–V hysteresis for GdNiO 3− x films grown under lower P(O 2 ), suggesting that oxygen vacancies in GdNiO 3− x films play a crucial role in the RS behavior.…”

supporting

confidence: 72%

“…Introducing oxygen vacancies www.advelectronicmat.de microscope (STEM) results confirm that the concentration of oxygen vacancies is higher in GdNiO 3−x films deposited under lower P(O 2 ). [13,[19][20][21][22] Figure 1b and Figure S3 (Supporting Information) clearly show more pronounced I-V hysteresis for GdNiO 3−x films grown under lower P(O 2 ), suggesting that oxygen vacancies in GdNiO 3−x films play a crucial role in the RS behavior. The good epitaxial relationship between GdNiO 3−x and Nb-SrTiO 3 can be observed in both films.…”

Section: Doi: 101002/aelm201700321mentioning

confidence: 98%

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Electrochemically Driven Giant Resistive Switching in Perovskite Nickelates Heterostructures

Wang

Zhang

Chang

et al. 2017

Adv Elect Materials

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into the corner-shared NiO 6 octahedra network (Figure 1a) modifies the NiO bond length and angle, affecting the electronic bandwidth and physical properties of RNiO 3 . Furthermore, Ni 3+ is reduced2 2x and electrons are doped into RNiO 3 via oxygen vacancies. [2,10] Previous works have shown that oxygen vacancies play an important role in perovskite heterostructures. [10][11][12][13][14][15] External electric field could induce the migration of the oxygen vacancy in the perovskite films and then change the interfacial barrier in heterostructures, leading resistive switching (RS) behavior. We expect such effect to be more prominent in nickelates-based ones due to their smaller oxygen vacancy formation energy. This motivates us to explore the possibility of electrochemically driven RS in nickelates systems. Our finding reveals giant bipolar RS behavior in Pt/RNiO 3 / Nb-SrTiO 3 heterostructures with ON/OFF ratio of about 10 5 at room temperature. The effect is tunable by varying the oxygen content or changing the rare earth element in the sample.A set of GdNiO 3−x films on Nb-SrTiO 3 substrates were grown under different deposition oxygen pressures (P(O 2 )) of 100, 20, 2, and 0.2 mTorr, respectively. The film thickness was fixed at 10 nm. The samples are labeled as D1-D4, in the order of decreasing P(O 2 ) from 100 to 0.2 mTorr. The influence of P(O 2 ) on our samples can be seen in Figure 1 (also see Figure S1 in the Supporting Information). Figure 1b displays the typical current-voltage (I-V) characteristics of the samples, and the inset is the schematic setup for the measurements. The arrows in Figure 1b represent the sequence of voltage sweeps. Sample D1 shows nonlinear I-V characteristics with negligible RS effect. In contrast, sample D4 shows obvious "counterclockwise" bipolar RS behavior. Here, we define the upper and lower branches of the I-V curves as low resistance state (LRS or ON) and high resistance state (HRS or OFF), respectively. Sample D4 switches from HRS (LRS) to LRS (HRS) when a forward (reverse) bias is applied to Pt, and this is defined as the set (reset) process. It should be pointed out that this counterclockwise I-V hysteresis in our asymmetrical devices is different from ferroelectric switchable diode behavior, [16][17][18] which is mainly controlled by the ferroelectric polarization. Since the formation energy of oxygen vacancy is low in nikelates, [9] we expect more oxygen vacancies in the GdNiO 3−x film than in the Nb-SrTiO 3 substrate. Scanning transmission electronThe rich phase diagrams and peculiar physical properties of rare earth perovskite nickelates (RNiO 3 ) have recently attracted much attention. Their electronic structures are highly sensitive to carrier density and bandwidth due to Mott physics. Here, the electrochemically driven giant resistive switching in Pt/RNiO 3 /Nb-SrTiO 3 heterostructures is reported. Systematic investigation confirms that oxygen vacancies migration modifies the interfacial barrier at the RNiO 3 /Nb-SrTiO 3 interface and causes the resistive swit...

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confidence: 72%

Section: Doi: 101002/aelm201700321mentioning

confidence: 98%

Electrochemically Driven Giant Resistive Switching in Perovskite Nickelates Heterostructures

Wang

Zhang

Chang

et al. 2017

Adv Elect Materials

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“…This effect can also be observed on the study of the thickness dependent resistive switching in the NiO film or when the I-V is measured at different height of the nanocrystals. [33,34] We also notice that in our NiO film the V S is 2.7 V, meaning that the memristive element of NiO can be activated with the bias application of higher than 2.5 V, which is also been reported in other NiO-based resistive switching devices in both film [34][35][36][37] and nanostructure [38][39][40][41][42][43] forms. This is also in agreement with our previous results that the correlation between the I-V and electrochemical strain mapping (ESM) loop with the frequency shifts are substantially stronger at higher switching bias.…”

Section: Non-linear Behavior Of Nio Nanocrystalsupporting

confidence: 76%

Self‐Assembled NiO Nanocrystal Arrays as Memristive Elements

Kurnia

Liu

Raveendra

et al. 2020

Adv Elect Materials

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Memristive switching, a nonlinear current-voltage (I-V) characteristic has seen a tremendous surge in interest, as an approach to achieve implementation of synaptic functions. Here, the memristive switching behavior of self-assembled NiO nanocrystals is investigated via scanning probe microscopy, based on first-order reversal curve current-voltage spectroscopy. Synaptic switching is clearly observed as a direct consequence of filament growth (i.e., gradually increased conductance) in the nanocrystals. A spatial dependency of the conduction in the nanocrystals suggests that there is a localization of the switching filament. The current understanding of this localization ignores features related to local lateral variation current which can generate an excessive local heat and temperature such as electrical dissipation. The observation of low electrical dissipation at the edge of the nanocrystals points out that less energy is wasted as heat such that the bias applied can be utilized more efficiently to assist the nucleation of the filament and thus reduces the power consumption. Electrical power dissipation is also found to scale with the nanocrystal height and has spatial dependence within the nanocrystals. The combination of synaptic switching and high density of the nanocrystals demonstrate feasibility to exploit them to create a basic architecture for neuromorphic memory devices.

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“…According to previous reports, these line profiles strongly suggest the existence of high‐density V O . [ 21,37–41 ] Therefore, our STEM‐ABF results confirm that the STO capping layer grown at P (O 2 ) STO = 5 mTorr can induce high‐density V O in the SRO layer underneath and meanwhile keep the layer from noticeable Ru vacancies.…”

Section: Resultssupporting

confidence: 60%

Oxygen Vacancy Engineering for Highly Tunable Ferromagnetic Properties: A Case of SrRuO₃ Ultrathin Film with a SrTiO₃ Capping Layer

Mun

Lee

et al. 2020

Adv Funct Materials

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Oxide heterostructures have great potential for spintronics applications due to their well-defined heterointerfaces and vast functionalities. To integrate such compelling features into practical spintronics devices, effective control of the magnetic switching behavior is key. Here, continuous control of the magnetic coercive field in SrTiO 3 /SrRuO 3 ultrathin heterostructures is achieved by oxygen vacancy (V O) engineering. Pulsed laser deposition of an oxygen-deficient SrTiO 3 capping layer can trigger V O migration into the SrRuO 3 layer while avoiding the formation of Ru vacancies. Moreover, by varying the thickness and growth conditions of the SrTiO 3 capping layer, the value of the coercive field (H C) in the ferromagnetic SrRuO 3 layer can be continuously tuned. The maximum enhancement of H C at 5 K is 3.2 T. Such a wide-range tunability of H C may originate from a V O-induced enhancement of perpendicular magnetic anisotropy and domain wall pinning. This study offers effective approaches for controlling physical properties of oxide heterostructures via V O engineering, which may facilitate the development of oxide-based functional devices.

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Deterministic Role of Concentration Surplus of Cation Vacancy over Anion Vacancy in Bipolar Memristive NiO

Cited by 30 publications

References 57 publications

Electrochemically Driven Giant Resistive Switching in Perovskite Nickelates Heterostructures

Electrochemically Driven Giant Resistive Switching in Perovskite Nickelates Heterostructures

Self‐Assembled NiO Nanocrystal Arrays as Memristive Elements

Oxygen Vacancy Engineering for Highly Tunable Ferromagnetic Properties: A Case of SrRuO₃ Ultrathin Film with a SrTiO₃ Capping Layer

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Deterministic Role of Concentration Surplus of Cation Vacancy over Anion Vacancy in Bipolar Memristive NiO

Cited by 30 publications

References 57 publications

Electrochemically Driven Giant Resistive Switching in Perovskite Nickelates Heterostructures

Electrochemically Driven Giant Resistive Switching in Perovskite Nickelates Heterostructures

Self‐Assembled NiO Nanocrystal Arrays as Memristive Elements

Oxygen Vacancy Engineering for Highly Tunable Ferromagnetic Properties: A Case of SrRuO3 Ultrathin Film with a SrTiO3 Capping Layer

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Oxygen Vacancy Engineering for Highly Tunable Ferromagnetic Properties: A Case of SrRuO₃ Ultrathin Film with a SrTiO₃ Capping Layer