Determining thermo‐mechanical properties of polydimethylsiloxanes from their strain‐induced spectral fingerprints

Anwer, Ali; Naguib, Hani E.

doi:10.1002/polb.24787

Cited by 2 publications

(1 citation statement)

References 24 publications

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“…In addition, there is no crack formation on the PSI-4 film after 1000 stretch–release cycles with varied strain ranges of 50–150%. To compare the thermal and mechanical properties of PSI to the conventional elastomers including SEBS and Sylgard 184, Table S4 summarizes the CTE and hysteresis of PSI-4 and those reported for SEBS and Sylgard 184. − The CTEs (ppm K –1 ), hystereses (%), and U T (MJ m –3 ) of PSI-4, SEBS, and Sylgard 184 are (305, ∼35, 13), (150, ∼60, 9), and (∼280, ∼5, ∼1), respectively. As can be seen, PSI-4 presents a comparable CTE and a higher U T than Sylgard 184, and PSI-4 also possesses a lower hysteresis and a higher U T than SEBS, which indicates its excellent thermal and mechanical properties.…”

Section: Resultsmentioning

confidence: 99%

Mechanically Tough and Durable Poly(siloxane imide) Network Elastomer for Stretchable Electronic Applications

Hsu

Lin

Chen

et al. 2022

ACS Appl. Polym. Mater.

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In the development of organic electronics, polyimide (PI)-based materials have drawn significant research attention due to their remarkable features, including a simple synthesis, solution processability, outstanding thermal stability, and respectable mechanical strength. Despite the good electronic performance of PI-based materials, a high elastic modulus over 1 GPa and a modest elongation at break of the conventional PIs have restricted their applications in stretchable electronics. To address this issue, poly(siloxane imide) (PSI) with a soft siloxane chain has been proposed to achieve a significantly reduced modulus and an increased stretchability. However, previous works revealed the weak mechanical strength of PSI, in which the latest reported stretchable device comprising PSI thin film could only sustain a tensile strain below 40%. Herein, in the present study, we developed a thermally stable and mechanically durable PSI network through the polyaddition–condensation reaction between 4,4′-oxidiphthalic anhydride, aminopropyl-terminated polydimethylsiloxane, and varied amounts of 1,3,5-triaminophenoxybenzene (TAB) as a cross-linker. An optimal PSI network with 11.1% TAB exhibited a high decomposition temperature at 426 °C, a softening temperature over 200 °C, an elongation at break over 400%, a superior toughness at 13.29 MJ m–3, and low strain hysteresis. Owing to the improved solubility of PSI, the polymer elastomer can be processed as a substrate material or thin-film active layer with good mechanical properties. Finally, all-solution-processed, stretchable, and durable electronic devices including resistive memory and organic field-effect transistors were fabricated using the designed PSI with an affordable and feasible solution process. This work underlines the importance of network design on soft polymers to create mechanically tough and durable elastomers for next-generation stretchable electronics.

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