Determining factor of effective work function in metal/bi-layer high-<i>k</i> gate stack structure studied by photoemission spectroscopy

Toyoda, Satoshi; Kumigashira, Hiroshi; Oshima, Masaharu; Sugaya, Hiroshi; Morita, Hiromi

doi:10.1063/1.3695166

Cited by 5 publications

(2 citation statements)

References 11 publications

(17 reference statements)

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“…Experiment and theory suggest possible ways of tuning Φ eff by implanting dopants into the gate stack, or by introducing an interfacial "capping" layer either at the Si/HfO2 interface or at the metal/HfO 2 interface [7]. There are many reported ways of tuning the Φ eff of gate electrodes, for example, by dopants implantation and annealing, which induces the variation of the metal-dielectric interface status, subsequently leading to the modulation of the work function of the gate electrode [8].…”

Section: Introductionmentioning

confidence: 99%

Impact of nitrogen on effective work function of metal/oxide stack: A first-principles study of the Pt/HfO2 interface

Liu

Ouyang

Durakiewicz

et al. 2015

Solid State Communications

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a b s t r a c tModulating the effective work function (Φ eff ) of metal electrodes is both crucial and challenging in metal-oxide-semiconductor transistors. The introduction of atomic dopants is shown to be an effective method to modify the interface Φ eff . Here we apply the first principles calculations to systematically explore the impact of incorporation of the non-metallic ambient gas element N on the effective work function of a Pt/HfO 2 interface. We find that Φ eff is very closely related to the doped atomic position and concentration of the incorporated N atoms. The incorporation is favored at the interface near HfO 2 side, and it can significantly increase the interface Φ eff for the Pt/HfO 2 stack (making it more p-type). Also, the Φ eff increases with the increase of doped N concentration due to the mitigation effect of doped N on interface dipole moment. Our findings will provide guidance in developing the environment annealing approach to modulation of Φ eff of the metal/oxide stack.

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Section: Introductionmentioning

confidence: 99%

Impact of nitrogen on effective work function of metal/oxide stack: A first-principles study of the Pt/HfO2 interface

Liu

Ouyang

Durakiewicz

et al. 2015

Solid State Communications

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“…[9][10][11][12] The introduction of appropriate dopants at the silicide-silicon interface, e.g., B for PtSi and As for ErSi, known as dopant segregation, 4 has been successfully implemented. However, dopant segregation needs a high thermal budget and crucially relies on the ability to control the concentration and position of dopants.…”

Section: Introductionmentioning

confidence: 99%

The Schottky barrier modulation at PtSi/Si interface by strain and structural deformation

et al. 2015

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We show, using density functional theory (DFT) calculations, that the Schottky barrier height (SBH) at the PtSi/Si interface can be lowered by uniaxial strain applied not only on Si but also on PtSi. The strain was applied to the (001) direction of Si and PtSi, which is normal for the interface. The SBH of the hole is lowered by 0.08 eV under 2% of tensile strain on Si and by 0.09 eV under 4 % of compressive strain on PtSi. Because the SBH at PtSi/Si contact is approximately 0.2 eV, this amount of reduction can significantly lower the resistance of the PtSi/Si contact; thus applying uniaxial strain on both PtSi and Si possibly enhances the performance of Schottky barrier field effect transistors. Theoretical models of SB formation and conventional structure model are evaluated. It is found that Pt penetration into Si stabilizes the interface and lowers the SBH by approximately 0.1 eV from the bulk-terminated interface model, which implies that conventionally used bulk-terminated interface models have significant errors. Among the theoretical models of SB formation, the model of strong Fermi level pining adequately explains the electron transfer phenomena and SBH, but it has limited ability to explain SBH changes induced by changes of interface structure.

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Influence of Hf doping on interfacial layers of Ta2O5 stacks studied by ellipsometry

Karmakov

Paskaleva

2013

Applied Surface Science

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Determining factor of effective work function in metal/bi-layer high-k gate stack structure studied by photoemission spectroscopy

Cited by 5 publications

References 11 publications

Impact of nitrogen on effective work function of metal/oxide stack: A first-principles study of the Pt/HfO2 interface

Impact of nitrogen on effective work function of metal/oxide stack: A first-principles study of the Pt/HfO2 interface

The Schottky barrier modulation at PtSi/Si interface by strain and structural deformation

Influence of Hf doping on interfacial layers of Ta2O5 stacks studied by ellipsometry

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