2018
DOI: 10.1016/j.jallcom.2018.07.303
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Determination of valence and conduction band offsets in Zn0.98Fe0.02O/ZnO hetero-junction thin films grown in oxygen environment by pulsed laser deposition technique: A study of efficient UV photodetectors

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Cited by 31 publications
(5 citation statements)
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“…Upon raising the Tb concentration, it goes up to 1.84 × 10 10 Jones (1% Tb-doped ZnO), and further decreases up to 1.57 × 10 9 Jones for a higher concentration of 5% Tb-doped film. Singh et al [48] prepared ZnO films that showed the highest specific detectivity of 5.48 × 10 9 Jones. Zhou et al [49] obtained a detectivity value of 1.6 × 10 12 Jones for the Ga-doped ZnO nanostructure.…”
Section: Photodetector Analysismentioning
confidence: 99%
“…Upon raising the Tb concentration, it goes up to 1.84 × 10 10 Jones (1% Tb-doped ZnO), and further decreases up to 1.57 × 10 9 Jones for a higher concentration of 5% Tb-doped film. Singh et al [48] prepared ZnO films that showed the highest specific detectivity of 5.48 × 10 9 Jones. Zhou et al [49] obtained a detectivity value of 1.6 × 10 12 Jones for the Ga-doped ZnO nanostructure.…”
Section: Photodetector Analysismentioning
confidence: 99%
“…[6][7][8][9][10][11][12] Among those semiconductors, ZnO has been regarded as a competitive nominee for the implementation of UV photodetection owing to its excellent advantages, i.e., a wide direct bandgap (∼3.37 eV), high exciton binding energy (∼60 meV), small electron and hole collision ionization coefficient, non-toxic nature, etc. [13][14][15][16] To meet the requirements for photodetection technique innovations, liquidphase deposition for low-dimensional ZnO, especially for colloidal quantum dots (CQDs), has been developed for concurrently realizing energy-efficient manufacture, lattice matching, and an adjustable bandgap during the fabrication of photoactive layers. [17][18][19] However, the inherently irreconcilable contradiction of the inverse relationship between light absorption and carrier transportation is critically determined by the thickness of photoactive layers, which has still remained a big concern for a facile strategy.…”
Section: Introductionmentioning
confidence: 99%
“…Silicon is the most widely used semiconductor in photodetection applications owing to its high-speed, the suitability of its optical band gap and the availability of a matured industrial manufacturing technology [11]. Si photodetectors exhibit excellent photoresponse properties in the VIS and near-IR (NIR) wavelength regions which is associated to its optical bandgap of ∼1.12 eV; however, its performance in the UV region is rather low due to the small skin depth at these wavelengths [12][13][14][15] and the consequent generation of photoelectrons and holes close to the surface, which are prone to recombination induced by surface-related defect states.…”
Section: Introductionmentioning
confidence: 99%