Determination of valence and conduction band offsets in Zn0.98Fe0.02O/ZnO hetero-junction thin films grown in oxygen environment by pulsed laser deposition technique: A study of efficient UV photodetectors

Singh, K. B.; Berwal, Neelam; Rawal, Ishpal; Dahiya, Sajjan; Punia, R.; Dhar, Rakesh

doi:10.1016/j.jallcom.2018.07.303

Cited by 31 publications

(5 citation statements)

References 68 publications

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“…Upon raising the Tb concentration, it goes up to 1.84 × 10 10 Jones (1% Tb-doped ZnO), and further decreases up to 1.57 × 10 9 Jones for a higher concentration of 5% Tb-doped film. Singh et al [48] prepared ZnO films that showed the highest specific detectivity of 5.48 × 10 9 Jones. Zhou et al [49] obtained a detectivity value of 1.6 × 10 12 Jones for the Ga-doped ZnO nanostructure.…”

Section: Photodetector Analysismentioning

confidence: 99%

Impact of terbium inclusion on the photodetection performance of ZnO thin films

Kumar¹,

Chidhambaram

Kumar

et al. 2021

Semicond. Sci. Technol.

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Terbium (Tb)-doped ZnO thin films were fabricated using the successive ionic layer adsorption and reaction route. Their structural, morphological, optical, and ultraviolet photosensing properties were studied and compared with those of pure ZnO thin films. The x-ray diffraction results illustrate that the pure and Tb-doped ZnO films reveal hexagonal structures with the P63mc space group. The 1% Tb-doped ZnO film shows an increase in the absorption and a decrease in bandgap value from 3.24 eV to 3.15 eV compared to pure ZnO. The photoluminescence results reveal the existence of emission centers at 388, 414, 441, and 477 nm in the fabricated thin films. By increasing the rare earth (Tb) element, the near band edge emission was decreased and correspondingly increased the blue emission due to its 4f orbital energy transition. The photosensing parameters, such as responsivity, external quantum efficiency, and specific detectivity values of the 1% Tb-doped ZnO detector, are 2.21 × 10−1 A W−1, 75%, and 1.84 × 1010 Jones, respectively, which are higher compared to the other fabricated devices due to their better optoelectronic properties. For the 5% Tb-doped ZnO detector, the I–V characteristic curve shows a non-linear behavior, which indicates that a small Schottky barrier is formed in the detector due to widening of the potential barrier and depletion region by Tb. We also investigated the possible energy band diagram of both linear and non-linear (Schottky barrier) behaviors for Tb-doped ZnO detectors.

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Section: Photodetector Analysismentioning

confidence: 99%

Impact of terbium inclusion on the photodetection performance of ZnO thin films

Kumar¹,

Chidhambaram

Kumar

et al. 2021

Semicond. Sci. Technol.

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“…[6][7][8][9][10][11][12] Among those semiconductors, ZnO has been regarded as a competitive nominee for the implementation of UV photodetection owing to its excellent advantages, i.e., a wide direct bandgap (∼3.37 eV), high exciton binding energy (∼60 meV), small electron and hole collision ionization coefficient, non-toxic nature, etc. [13][14][15][16] To meet the requirements for photodetection technique innovations, liquidphase deposition for low-dimensional ZnO, especially for colloidal quantum dots (CQDs), has been developed for concurrently realizing energy-efficient manufacture, lattice matching, and an adjustable bandgap during the fabrication of photoactive layers. [17][18][19] However, the inherently irreconcilable contradiction of the inverse relationship between light absorption and carrier transportation is critically determined by the thickness of photoactive layers, which has still remained a big concern for a facile strategy.…”

Section: Introductionmentioning

confidence: 99%

A synergetic enhancement strategy of light utilization and carrier transfer for UV photodetection associated with artificial resonance nano-cavities

Cheng,

Li,

et al. 2024

J. Mater. Chem. A

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“…Silicon is the most widely used semiconductor in photodetection applications owing to its high-speed, the suitability of its optical band gap and the availability of a matured industrial manufacturing technology [11]. Si photodetectors exhibit excellent photoresponse properties in the VIS and near-IR (NIR) wavelength regions which is associated to its optical bandgap of ∼1.12 eV; however, its performance in the UV region is rather low due to the small skin depth at these wavelengths [12][13][14][15] and the consequent generation of photoelectrons and holes close to the surface, which are prone to recombination induced by surface-related defect states.…”

Section: Introductionmentioning

confidence: 99%

Laser ablation fabrication of a p-NiO/n-Si heterojunction for broadband and self-powered UV–Visible–NIR photodetection

Chaoudhary

Dewasi

et al. 2022

Nanotechnology

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We report on the optoelectronic characteristics of p-NiO/n-Si heterojunction photodiodes for broadband photodetection, fabricated by depositing a p-type NiO thin film onto a commercial n-type silicon substrate using pulsed laser deposition (PLD) technique. The structural properties of the PLD-grown p-NiO material were analysed by means of X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS), confirming its crystalline nature and revealing the presence of Ni vacancies, respectively. Hall measurements confirmed the p-type semiconducting nature of the NiO thin film having a carrier concentration of 8.4 × 1016 cm-3. The current-voltage (I-V) characteristics of the p-NiO/n-Si heterojunction photodevice were investigated under different wavelengths ranging from UV to NIR. The self-bias properties under different illuminations of light were also explored systematically. Under self-bias condition, the photodiode exhibits excellent responsivities of 12.5 mA.W-1, 24.6 mA.W-1 and 30.8 mA.W-1 with illumination under 365 nm, 485 nm, and 850 nm light, respectively. In addition, the time dependency of the photoresponse of the fabricated photodevice has also been investigated and discussed thoroughly.

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Determination of valence and conduction band offsets in Zn0.98Fe0.02O/ZnO hetero-junction thin films grown in oxygen environment by pulsed laser deposition technique: A study of efficient UV photodetectors

Cited by 31 publications

References 68 publications

Impact of terbium inclusion on the photodetection performance of ZnO thin films

Impact of terbium inclusion on the photodetection performance of ZnO thin films

A synergetic enhancement strategy of light utilization and carrier transfer for UV photodetection associated with artificial resonance nano-cavities

Laser ablation fabrication of a p-NiO/n-Si heterojunction for broadband and self-powered UV–Visible–NIR photodetection

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