Determination of transport coefficients in high mobility heterostructure systems in the presence of parallel conduction

Syphers, D. A.; Martin, K. P.; Higgins, R. J.

doi:10.1063/1.97103

Cited by 35 publications

(17 citation statements)

References 8 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…9 In general, an electrical connection between two separated layers can be realized for example by electrical contacts diffused into the deeper layer. 10 To verify this possibility, we tried to avoid the diffusion of the contacts into the sample interior using silver paint instead of indium, but the results were the same.…”

Section: Methodsmentioning

confidence: 95%

Search for free holes in InN:Mg-interplay between surface layer and Mg-acceptor doped interior

Dmowski

Baj

Suski

et al. 2009

Journal of Applied Physics

View full text Add to dashboard Cite

We measured lateral ac transport (up to 20 MHz), thermopower, as well as resistivity and Hall effect in InN:Mg samples with various Mg content. The sign of the Hall effect for all the samples was negative (electrons), however, the thermopower (α) measurements have shown the p-type sign of α for moderate Mg content—in the window centered around 1×1019 cm−3. Further overdoping with Mg yields donor type of defects and the change of thermoelectric power sign. The ac measurements performed as a function of frequency revealed that in both samples exhibiting and nonexhibiting p-type sign of thermopower, the n-type inversion layer at the surface does not prevent the electric contact to the bulk layer. Therefore we conclude that the n-type Hall effect invariably reported for all the Mg-doped samples originates from electron domination in mobility-weighted contributions of both types of carriers.

show abstract

Section: Methodsmentioning

confidence: 95%

Search for free holes in InN:Mg-interplay between surface layer and Mg-acceptor doped interior

Dmowski

Baj

Suski

et al. 2009

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…15 In 0.85 Sb buffer layer are in intimate contact through the shallow Ohmic contacts. The three layers can therefore be considered to experience the same local electric field, unlike an isolated layer model 25 (this is also reasonable due to the lateral dimensions of the device). In the case of the MBL samples, we assume that the buffer layer region beneath the Al 0.3 In 0.7 Sb barrier is electrically isolated from the upper three layers, and contacts and can be ignored.…”

Section: A Multi-carrier Modelmentioning

confidence: 99%

Suppression of the parasitic buffer layer conductance in InSb/AlxIn1−xSb heterostructures using a wide-band-gap barrier layer

et al. 2011

View full text Add to dashboard Cite

InSb/Al x In 1-x Sb heterostructures display intrinsic parallel conduction in the buffer layer at room temperature that limits exploitation of the high-mobility two-dimensional electron gas (2DEG), particularly for nanostructured devices where deep isolation etch processing is impractical. Here, we demonstrate a strategy to reduce the parasitic conduction by the insertion of a pseudomorphic barrier layer of wide-band-gap alloy below the QW. We have studied the high-field magnetotransport in two types of InSb/Al x In 1-x Sb modulation doped quantum well heterostructures with and without the barrier layer in the temperature range 2-290 K and magnetic fields to 7.5 T. The conduction in the doping layer, the 2DEG, and the buffer layer are analyzed using a multi-carrier model that successfully captures the field dependence of the Hall resistance over the experimental field range. Samples with the barrier layer show significantly reduced buffer layer conduction compared to samples without. Our results are expected to be of importance for ambient temperature nano-electronic operation.

show abstract

“…The problem is that the standard dc Hall-effect method measures only two parameters, resistivity and Hall coefficient R H , and thus is able to determine only two unknowns, the carrier concentration n and mobility , in a single layer. 3 In reality, space charges can accumulate/deplete across the sample layer boundaries depending on the relative strength of their respective electrochemical potentials. 2 Shortcomings for the current dc Hall-effect measurements are that they are not able to profile or characterize a semiconductor sample either horizontally or vertically.…”

mentioning

confidence: 99%

Hall-effect characterization in semiconductor heterostructure junctions using polarized laser signal

How¹,

Ahern

1996

Journal of Applied Physics

View full text Add to dashboard Cite

We describe a new technique which exploits the ac Hall effect in the characterization of layered semiconductor structures. The method employs laser signals in the presence of a dc magnetic bias field. Upon incidence the polarization of the optical signal is rotated via a Lorentz force due to the ac Hall effect. As such, the reflected waves carry information on the Hall mobility of the charge carriers. The calculations show that ac Hall reflection warrants sufficient intensity to be measured. Our theory is complete in the sense that depth profiling has been explicitly incorporated in the formulation.

show abstract

Determination of transport coefficients in high mobility heterostructure systems in the presence of parallel conduction

Cited by 35 publications

References 8 publications

Search for free holes in InN:Mg-interplay between surface layer and Mg-acceptor doped interior

Search for free holes in InN:Mg-interplay between surface layer and Mg-acceptor doped interior

Suppression of the parasitic buffer layer conductance in InSb/AlxIn1−xSb heterostructures using a wide-band-gap barrier layer

Hall-effect characterization in semiconductor heterostructure junctions using polarized laser signal

Contact Info

Product

Resources

About