1997
DOI: 10.1006/jcis.1997.5138
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Determination of the Surface Isoelectric Point of Oxide Films on Metals by Contact Angle Titration

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Cited by 110 publications
(85 citation statements)
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References 36 publications
(24 reference statements)
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“…5. At the isoelectric point the contact angle shows a maximum which is qualitatively in line with observations made in the literature [1,2,4,3,28,5,6]. The contact angle at the isoelectric point is h i.e.p.…”
Section: Resultssupporting
confidence: 91%
“…5. At the isoelectric point the contact angle shows a maximum which is qualitatively in line with observations made in the literature [1,2,4,3,28,5,6]. The contact angle at the isoelectric point is h i.e.p.…”
Section: Resultssupporting
confidence: 91%
“…The PETG coating was assumed to be a Lewis base, determined by inverse gas chromatographyInverse Gas Chromatography (IGC). [30] Since clearly there is adhesion possible with the smooth surface of pure aluminium at the isoelectric point (IEP at pH = 9.5), [31] it is tentatively assumed that the polymer is indeed a weak base.…”
Section: Adcbmentioning
confidence: 99%
“…It has been reported that IEP of Al 2 O 3 particles was in the range of 6.9-10.5, whereas IEPs of SiO 2 and TiO 2 particles were in the range of 1.9-4.5 and 3.8-7.2, respectively [31,32]. Surface charges of Al 2 O 3 , SiO 2 and TiO 2 suspensions are pH dependent [33,34] and rely on the reactivity of hydroxyl surface groups with potential-determining ions in the solution [35]. Hydroxyl groups can become hydrated or hydroxylated in the solution through acquiring hydrogen or hydroxide ions from aqueous solutions.…”
Section: Mf Of Ospw With Sio 2 -And Tio 2 -Modified Membranesmentioning
confidence: 99%