Determination of the subband carrier densities in a strained GaAs/In0.15Ga0.85As/Al0.22Ga0.78As single quantum well using photoluminescence

Kim, T.W.; Jung, M.; Lee, D.U.

doi:10.1016/0169-4332(95)00325-8

Cited by 1 publication

(1 citation statement)

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“…The injection of photogenerated holes in the QW induces radiative recombinations with electrons of the Fermi sea revealing the singularities of the conduction band and particularly the ground energies of the populated subbands. 9,10 The spectra measured on samples D, E and F are displayed in Fig. 8.…”

Section: -3mentioning

confidence: 99%

Electronic properties of the high electron mobility Al0.56In0.44Sb/Ga0.5In0.5Sb heterostructure

Desplanque

Vignaud

Godey

et al. 2010

Journal of Applied Physics

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Electronic properties of the high electron mobility Al0.56 In0.44 Sb/Ga0.5 In0.5 Sb heterostructure Desplanque, L.; Vignaud, D.; Godey, S.; Cadio, E.; Plissard, S.R.; Wallart, X.; Liu, P.; Sellier, H. Published in:Journal of Applied Physics DOI:10.1063/1.3475709Published: 01/01/2010 Document VersionPublisher's PDF, also known as Version of Record (includes final page, issue and volume numbers) Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication Citation for published version (APA):Desplanque, L., Vignaud, D., Godey, S., Cadio, E., Plissard, S. R., Wallart, X., ... Sellier, H. (2010). Electronic properties of the high electron mobility Al0.56 In0.44 Sb/Ga0.5 In0.5 Sb heterostructure. Journal of Applied Physics, 108(4), 043704-1/6. [043704]. DOI: 10.1063/1.3475709 General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. We measure by means of x-ray photoemission spectroscopy, photoluminescence, and Hall effect measurements the key parameters involved in the achievement of a high speed and very low power consumption field effect transistor: conduction and valence band offsets, energy gaps of channel and barrier materials, electron effective mass, and density of states in the channel. We observe the influence of the quantum well thickness on the electron Hall mobility and sheet carrier density. A type I heterostructure exhibiting a room temperature electron mobility of 25 000 cm 2 V −1 s −1 with a sheet carrier density of 1.5ϫ 10 12 cm −2 is demonstrated for the widest channel. We show that the thickness of the channel influences both Hall density and mobility through a multisubband occupancy. We discuss about the scattering mechanisms limiting the mobility in the second subband.

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Section: -3mentioning

confidence: 99%