2000
DOI: 10.1063/1.1287226
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Determination of the size, shape, and composition of indium-flushed self-assembled quantum dots by transmission electron microscopy

Abstract: Single and multiple layers of self-assembled InAs quantum dots (QDs) produced by the indium-flush technique have been studied by transmission electron microscopy (TEM) in an effort to develop techniques to reproducibly grow QDs of uniform size and shape. To monitor the changes in QD dimensions, plan-view samples of capped single layers were studied as well as cross-sectional samples of QDs in multiple layers and stacks. The changes in the observed round- and square-shaped QD images under various plan-view TEM … Show more

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Cited by 49 publications
(17 citation statements)
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“…[10][11][12][13] It was also reported that the shape strongly depends on the growth parameters during MBE. 13 Performing measurements on the natural ͑110͒ cleavage plane implies that the shape and size found in the cross-sectional images depend on the position of each dot with respect to the cleavage plane and the actual dot shape.…”
mentioning
confidence: 99%
See 1 more Smart Citation
“…[10][11][12][13] It was also reported that the shape strongly depends on the growth parameters during MBE. 13 Performing measurements on the natural ͑110͒ cleavage plane implies that the shape and size found in the cross-sectional images depend on the position of each dot with respect to the cleavage plane and the actual dot shape.…”
mentioning
confidence: 99%
“…8 The dot shape and thus the electronic properties can, however, change significantly after coverage with a capping layer. High resolution transmission electron microscopy can be used to investigate covered quantum dots, 1,6,7,9,10 but this method suffers from averaging effects, which hamper the investigation of, for example, interface roughness and alloy fluctuations. In this study, cross-sectional scanning-tunneling microscopy ͑X-STM͒ is employed to obtain a conclusive and comprehensive determination of the shape, size, and composition of SQDs.…”
mentioning
confidence: 99%
“…Especially, during the last decade it has become possible to fabricate realistic semiconductor quantum dots in laboratories. Various experimental results demonstrate that InAs/GaAs quantum dots can have diverse shapes, such as disk, ellipsoid, or conical shapes with a circular top view cross section and a large area-to-height aspect ratio (see for instance [2,3]). Coupled quantum dots allow us to form an artificial molecule.…”
mentioning
confidence: 99%
“…The dimensions of quantum dots (QDs) are usually deter− mined using transmission electron microscopy (TEM) [1,2] scanning tunnelling microscopy (STM) [3] and atomic force microscopy (AFM) [4,5]. Most popular are AFM measure− ments as this method is simple, fast and does not require so− phisticated sample preparation.…”
Section: Introductionmentioning
confidence: 99%