Determination of the Seebeck Coefficient and Other Thermoelectric Parametersusing Specific Resistivity and Concentration of Charge Carriers of N-Si0.96Ge0.04 Alloy Irradiated by 60Co γ-photons

Abstract

The thermoelectric alloy N-Si0.96Ge0.04-P irradiated by 60Co gamma-photons is been studied. The temperature dependences of the Seebeck coefficient, power and electronic quality factors, as well as the universal electrical conductivity and effective masses of electrons in the interval (250400)°C are calculated. All these dependences are different from the results previously obtained for SixGe1-x with other compositions (except for effective mass). This should be associated with a significant difference in specific resistivities and concentrations of charge carriers.