Determination of the Pressure Dependence of Band‐Structure Parameters by Two‐Photon Spectroscopy

Reimann, K.; Haselhoff, M.; Rübenacke, St.; Steube, M.

doi:10.1002/pssb.2221980110

Cited by 22 publications

(5 citation statements)

References 44 publications

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“…Another cause could be pressure and polarization effects induced by the PSSQ matrix. A hydrostatic pressure induced exciton energy shift in bulk CuCl (7.65 meV/GPa) [43], for CuCl microcrystals embedded in alkali-chloride matrices (8.22 meV/GPa) [44] and for nanocrystals in a LiCl matrix (4.1 meV/GPa) [45] were reported previously. The hydrostatic pressure in nanocrystalline CuCl hybrid films is, however, very small, so the energy shift associated with this effect is not considerable.…”

Section: Exciton Energy Shiftingsupporting

confidence: 74%

Temperature dependent photoluminescence of nanocrystalline γ-CuCl hybrid films

et al. 2014

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Organic-inorganic hybrid films combine the basic properties of organic and inorganic materials and offer special advantages that enhance optical, thermal and mechanical properties. We have studied the temperature dependent photoluminescence (PL) of nanocrystalline γ-CuCl hybrid films from 15 K to room temperature in order to investigate the electronic transitions of the hybrid films. The I 1 impurity bound exciton peak is the most intense emission peak at 15 K but the peak intensity decreases rapidly with increasing temperature due to the low binding energy of this exciton bound to an impurity center and above 80 K all three excitonic and biexcitonic peaks, except the Z 3 free exciton emission peak disappeared. The biexciton emission peak intensity follows a quadratic dependency on power in the excitation power range b 10 kWcm −2 . The integrated Z 3 excitonic PL intensity is almost independent of the temperature below 80 K, while above 100 K the PL emission intensity decreases rapidly. Thermal quenching of the Z 3 free exciton PL emission in hybrid films has been observed. The full width at half maximum (FWHM) of the free exciton peak was investigated as a function of temperature and was explained by a theoretical model which considers the scattering of excitons with acoustic phonons and longitudinal optical phonons. The FWHM of the Z 3 free exciton emission peak increases with increasing temperature, and a value of~76 meV was deduced for the FWHM at room temperature, which is comparatively better than ZnO (106 meV) and GaN (100 meV) nanostructures. The Z 3 free exciton energy of the hybrid films exhibits a blue shift of 3 meV at 15 K compared to the bulk CuCl samples which may be due to a dead layer effect near the CuCl nanocrystal surface. The exciton energy also presents a blue shift of~41 meV with increasing temperature from 15 K to room temperature. The results obtained for the γ-CuCl hybrid films are comparable to those of vacuum evaporated and sputtered CuCl films reported in the literature.

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Section: Exciton Energy Shiftingsupporting

confidence: 74%

Temperature dependent photoluminescence of nanocrystalline γ-CuCl hybrid films

et al. 2014

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“…However, the available data show that the pressure coefficients for materials with wurtzite structure are generally less than those of zincblende structure. For example, the experimental pressure coefficient for wurtzite ZnSe is around 4.5 meV/kbar [17] while, for zincblende ZnSe, the available data is 7.0-7.5 meV/kbar [18,19] and our calculated result is 7.564 meV/kbar. The pressure coefficient of the band gap for wurtzite CdSe is around 4.3 meV/kbar [20] and, for zincblende structure, it is around 5.8 meV/kbar [14,18] and our calculation yields a value of 5.886 meV/ kbar.…”

Section: Comparison With Experiments and Other Calculationsmentioning

confidence: 93%

Pressure dependence of energy gap of III–V and II–VI ternary semiconductors

Chen

Ravindra

2012

J Mater Sci

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A general expression for the pressure dependence of the energy gap of a series of group III-V and group II-VI ternary semiconductors have been derived based on Van Vechten's dielectric theory. The results obtained are in good accord with the available experimental data. The trends in the variation of the pressure dependence of the energy gap with the nearest neighbor distance and Phillips ionicity are explored qualitatively.

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“…Taking the appropriate transition matrix ele- Table 5 The first and second order pressure coefficients of energy band gap within GGA EV. [75]. b Ref.…”

Section: Optical Propertiesmentioning

confidence: 98%

Structural, electronic and optical properties of ZnX and CdX compounds (X=Se, Te and S) under hydrostatic pressure

Nourbakhsh

2010

Journal of Alloys and Compounds

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Determination of the Pressure Dependence of Band‐Structure Parameters by Two‐Photon Spectroscopy

Cited by 22 publications

References 44 publications

Temperature dependent photoluminescence of nanocrystalline γ-CuCl hybrid films

Temperature dependent photoluminescence of nanocrystalline γ-CuCl hybrid films

Pressure dependence of energy gap of III–V and II–VI ternary semiconductors

Structural, electronic and optical properties of ZnX and CdX compounds (X=Se, Te and S) under hydrostatic pressure

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