Determination of the laterally homogeneous barrier height of metal/p-InP Schottky barrier diodes

Asubay, Sezai; Güllü, Ömer; Türüt, A.

doi:10.1016/j.vacuum.2009.06.050

Cited by 26 publications

(14 citation statements)

References 41 publications

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“…The diodes showed nearly ideal behavior at all temperatures with an ideality factor of 1.08 at 300 K with a barrier height of 0.73 eV. These values are comparable to the values reported by Asubay et al for Ti/p-InP Schottky diodes at 300 K where the low and high barrier heights are obtained as 0.69 and 0.92 eV and the ideality factors as 1.12 and 1.16 for the identically prepared diodes on the same sample [18]. The C-V measurements can be used to determine the interface quality as well as Schottky barrier height.…”

Section: Resultssupporting

confidence: 87%

Temperature dependency and carrier transport mechanisms of Ti/p-type InP Schottky rectifiers

Janardhanam

Lee

Shim

et al. 2010

Journal of Alloys and Compounds

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Section: Resultssupporting

confidence: 87%

Temperature dependency and carrier transport mechanisms of Ti/p-type InP Schottky rectifiers

Janardhanam

Lee

Shim

et al. 2010

Journal of Alloys and Compounds

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“…Gaussian function is used to fit the calculated n and U B values. The high values of n obtained by many researchers are attributed to barrier inhomogeneities, the existence of the native oxide layer between metal and semiconductor and the particular distribution of interface states localized at semiconductor [18][19][20][21][22][23]. Figure 4 depicts a plot of the barrier heights as a function of the ideality factors for 50 dots of Au/n-Si/Al Schottky diodes.…”

Section: Resultsmentioning

confidence: 98%

“…These deviations have been represented by assuming the existence of the barrier height inhomogeneities [13][14][15][16][17][18][19][20][21][22][23]. Sullivan et al [13] and Tung [14] have modeled imperfect metal-semiconductor structures by supposing lateral variation of barrier heights.…”

Section: Introductionmentioning

confidence: 99%

“…The barrier height inhomogeneity causes big ideality factors, which need to be improved by good uniformity of interface structure [24,25]. The experimental effective barrier heights and ideality factors determined from the I-V measurements vary from diode to diode, even if Schottky structures are identically fabricated [18][19][20][21][22][23]. Chawanda et al [18] have experimentally investigated the relationship between the ideality factors and effective barrier heights of Pd/n-Ge Schottky contact.…”

Section: Introductionmentioning

confidence: 99%

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Analysis of inhomogeneous device parameters using current–voltage characteristics of identically prepared lateral Schottky structures

et al. 2015

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We have identically fabricated 50 dots of Au/n-Si/Al Schottky structures and investigated the mean values of diode parameters from current-to-voltage (I-V) characteristics at 300 K. The values of diode parameters are determined from I-V characteristics, and Cheung and the modified Norde functions are varied from diode to diode although the Schottky structures are identically fabricated. The experimental values of ideality factor (n) and barrier height (U B ) for 50 dots of the Au/n-Si/Al Schottky structures have ranged from 1.048 to 1.695 and from 0.708 to 0.807 eV, respectively. The interface state densities (N ss ) are approximately obtained from 2 9 10 13 to 2 9 10 11 eV -1 cm -2 in the energy range from E c -0.45 to E c -0.75 eV, respectively. These findings can be referred to lateral barrier inhomogeneities of Schottky diodes. The distributions of all calculated parameters have been fitted by means of Gaussian function. The mean n and U B values have been found to be 1.316 ± 0.213 and 0.758 ± 0.030 eV, respectively. Furthermore, the value of lateral homogenous barrier height for 50 dots of Schottky structures is determined as 0.802 eV from the linear relationship between n and U B .

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“…Asubay et al 10) studied the electrical characteristics of the as-deposited Au/p-InP/ZnAu Schottky diodes (SDs), reported that the barrier height varied from 0.58 to 0.72 eV and ideality factor n from 1.14 to 1.47 from the current voltage (IV) characteristics. Varenne et al 11) investigated the electrical parameters of Pd and Au pseudo-Schottky contacts on p-InP as a function of metal species and thickness by IV measurements, reported that the pseudo-Schottky junctions exhibited a significant barrier height enhancement.…”

Section: Introductionmentioning

confidence: 99%

Electrical Properties and Interface States of Rare-Earth Metal Ytterbium Schottky Contacts to p-Type InP

et al. 2013

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The electronic parameters and interface state properties of Yb/p-InP Schottky diode have been investigated by currentvoltage (IV), capacitancevoltagefrequency (CVf ) and conductancevoltagefrequency (GVf ) measurements at room temperature. The barrier height and ideality factor of the Yb/p-InP Schottky diode are found to be 0.68 eV (IV)/0.79 eV (CV) and 1.24, respectively. As well, the values of barrier heights, ideality factors and series resistance are estimated by Cheung and Norde methods are compared. Under forward bias conditions, ohmic and space charge limited conduction (SCLC) mechanisms are identified at low and higher voltages, respectively. The CV characteristics of the Yb/p-InP Schottky diode are also measured at different frequencies at room temperature. Further, the Cf and Gf measurements of the Yb/p-InP Schottky diode are performed at various biases. The interface state density N ss and relaxation time¸of the diode are estimated from the Cf and Gf measurements. The N ss and the¸show a decrease with bias from the top of the valence band toward the midgap. The profile of series resistance dependent on frequency and voltage confirms the presence of interface states in Yb/p-InP Schottky structure.

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Determination of the laterally homogeneous barrier height of metal/p-InP Schottky barrier diodes

Cited by 26 publications

References 41 publications

Temperature dependency and carrier transport mechanisms of Ti/p-type InP Schottky rectifiers

Temperature dependency and carrier transport mechanisms of Ti/p-type InP Schottky rectifiers

Analysis of inhomogeneous device parameters using current–voltage characteristics of identically prepared lateral Schottky structures

Electrical Properties and Interface States of Rare-Earth Metal Ytterbium Schottky Contacts to p-Type InP

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