Determination of the laterally homogeneous barrier height of thermally annealed and unannealed Au/p-InP/Zn-Au Schottky barrier diodes

Asubay, Sezai; Güllü, Ömer; Türüt, A.

doi:10.1016/j.apsusc.2007.11.050

Cited by 28 publications

(15 citation statements)

References 39 publications

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“…Although Schottky barrier diodes (SBDs) have already been studied for more than fifty years, the fundamental mechanisms that determine the BH are still not fully understood [8][9][10][11]. It is only in the past decade that an inhomogeneous contact has been considered as an explanation for a voltagedependent BH [12][13][14][15][16]. Boyarbay et al [17] suggested that the recent motivation for studying Schottky barrier formation is due to the recognition that both electronic and chemical equilibria have to be considered together across a reactive interface between a metal and a semiconductor, as surface states and metal-induced states fail to take into consideration the chemical equilibrium at the interface.…”

Section: Introductionmentioning

confidence: 99%

Correlation Between Barrier Heights and Ideality Factors of Ni/n-Ge (100) Schottky Barrier Diodes

Chawanda

Nel²,

Auret³

et al. 2010

J. Korean Phy. Soc.

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We computed the homogeneous Schottky barrier height (SBH) at ideality factor (n) = 1.0 of Ni/nGe (100) Schottky diodes (SDs). The SDs were identically prepared by using resistive evaporation of Ni on n-Ge (100). The SBHs and n of these diodes (24 dots) were calculated from their experimental forward bias current-voltage (I-V ) and reverse bias capacitance-voltage (C-V ) measurements at room temperature. Even though the Schottky diodes were identically prepared, the values of the SBH from the I-V characteristics varied from 0.487 to 0.508 eV, the ideality factor varied from 1.34 to 1.53, and the SBH from the C −2 -V characteristics varied from 0.358 to 0.418 eV. The Gaussian fits of the experimental SBH distributions obtained from the C −2 -V and the I-V characteristics yielded mean SBH values of 0.401 ± 0.015 and 0.503 ± 0.006 eV, respectively. Furthermore, a homogeneous SBH value of approximately 0.535 eV was also computed from an extrapolation of a linear plot of the experimental SBHs versus the ideality factors. The homogeneous SBHs, rather than the effective SBHs, of individual contacts or mean values should be used to discuss the theories and the physical mechanisms that determine the SBHs of SDs.

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Section: Introductionmentioning

confidence: 99%

Correlation Between Barrier Heights and Ideality Factors of Ni/n-Ge (100) Schottky Barrier Diodes

Chawanda

Nel²,

Auret³

et al. 2010

J. Korean Phy. Soc.

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“…The BH decreases as the ideality factor increases. That is, there is a linear relationship between experimental effective BHs and ideality factors of Schottky contacts [34]. This may be attributed to lateral inhomogeneities of the effective BHs in Schottky barrier diodes [35].…”

Section: Resultsmentioning

confidence: 96%

Determination of the laterally homogeneous barrier height of palladium Schottky barrier diodes on n-Ge (1 1 1)

Chawanda¹,

Roro²,

Auret³

et al. 2010

Materials Science in Semiconductor Processing

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a b s t r a c tWe have studied the experimental linear relationship between barrier heights and ideality factors for palladium (Pd) on bulk-grown (1 1 1) Sb-doped n-type germanium (Ge) metal-semiconductor structures with a doping density of about 2.5 Â 10 15 cm À 3 . The Pd Schottky contacts were fabricated by vacuum resistive evaporation. The electrical analysis of the contacts was investigated by means of current-voltage (I-V) and capacitance-voltage (C-V) measurements at a temperature of 296 K. The effective barrier heights from I-V characteristics varied from 0.492 to 0.550 eV, the ideality factor n varied from 1.140 to 1.950, and from reverse bias capacitance-voltage (C À 2 -V) characteristics the barrier height varied from 0.427 to 0.509 eV. The lateral homogenous barrier height value of 0.558 eV for the contacts was obtained from the linear relationship between experimental barrier heights and ideality factors. Furthermore the experimental barrier height distribution obtained from I-V and (C À 2 À V) characteristics were fitted by Gaussian distribution function, and their mean values were found to be 0.529 and 0.463 eV, respectively.

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“…The barrier height inhomogeneity causes big ideality factors, which need to be improved by good uniformity of interface structure [24,25]. The experimental effective barrier heights and ideality factors determined from the I-V measurements vary from diode to diode, even if Schottky structures are identically fabricated [18][19][20][21][22][23]. Chawanda et al [18] have experimentally investigated the relationship between the ideality factors and effective barrier heights of Pd/n-Ge Schottky contact.…”

Section: Introductionmentioning

confidence: 97%

“…These deviations have been represented by assuming the existence of the barrier height inhomogeneities [13][14][15][16][17][18][19][20][21][22][23]. Sullivan et al [13] and Tung [14] have modeled imperfect metal-semiconductor structures by supposing lateral variation of barrier heights.…”

Section: Introductionmentioning

confidence: 99%

Analysis of inhomogeneous device parameters using current–voltage characteristics of identically prepared lateral Schottky structures

et al. 2015

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We have identically fabricated 50 dots of Au/n-Si/Al Schottky structures and investigated the mean values of diode parameters from current-to-voltage (I-V) characteristics at 300 K. The values of diode parameters are determined from I-V characteristics, and Cheung and the modified Norde functions are varied from diode to diode although the Schottky structures are identically fabricated. The experimental values of ideality factor (n) and barrier height (U B ) for 50 dots of the Au/n-Si/Al Schottky structures have ranged from 1.048 to 1.695 and from 0.708 to 0.807 eV, respectively. The interface state densities (N ss ) are approximately obtained from 2 9 10 13 to 2 9 10 11 eV -1 cm -2 in the energy range from E c -0.45 to E c -0.75 eV, respectively. These findings can be referred to lateral barrier inhomogeneities of Schottky diodes. The distributions of all calculated parameters have been fitted by means of Gaussian function. The mean n and U B values have been found to be 1.316 ± 0.213 and 0.758 ± 0.030 eV, respectively. Furthermore, the value of lateral homogenous barrier height for 50 dots of Schottky structures is determined as 0.802 eV from the linear relationship between n and U B .

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Determination of the laterally homogeneous barrier height of thermally annealed and unannealed Au/p-InP/Zn-Au Schottky barrier diodes

Cited by 28 publications

References 39 publications

Correlation Between Barrier Heights and Ideality Factors of Ni/n-Ge (100) Schottky Barrier Diodes

Correlation Between Barrier Heights and Ideality Factors of Ni/n-Ge (100) Schottky Barrier Diodes

Determination of the laterally homogeneous barrier height of palladium Schottky barrier diodes on n-Ge (1 1 1)

Analysis of inhomogeneous device parameters using current–voltage characteristics of identically prepared lateral Schottky structures

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