“…When the electron's kinetic energy e | V | of the injected electrons is higher than the local Schottky barrier formed between the metal and the semiconductor, the electrons can overcome the local barrier and a current I b is transmitted across the sample and collected through the backside Ohmic contact (Figure 1-a) (Wu et al, 2013;Janardhanam et al, 2019). Accurate Ballistic Electron Emission Spectroscopy (BEES) determination for the Schottky threshold Φ relies on a best-fit where experimental measurements are compared with a theoretical model where currently the state-of-the-art standard claims accuracies between 10 and 30 meV Rogers et al, 2021). Such a procedure has been successfully used before in other fields, like structural work related to diffraction techniques, and requires the use of theory as accurate as possible and free of adjustable parameters to avoid spurious correlations in the determination of the value of Φ.…”