We report on single-electron shuttling experiments with a silicon metal-oxide-semiconductor quantum dot at 300 mK. Our system consists of an accumulated electron layer at the Si/SiO2 interface below an aluminum top gate with two additional barrier gates used to deplete the electron gas locally and to define a quantum dot. Directional single-electron shuttling from the source to the drain lead is achieved by applying a dc source-drain bias while driving the barrier gates with an ac voltage of frequency fp. Current plateaus at integer levels of efp are observed up to fp = 240 MHz operation frequencies. The observed results are explained by a sequential tunneling model which suggests that the electron gas may be heated substantially by the ac driving voltage.Keywords: quantum dot, silicon, single-electron, charge pumping While the Josephson voltage and the quantum-Hall resistance standards [1,2] are routinely used in metrology institutes worldwide, the current standard is missing from the so-called quantum metrological triangle which would provide a consistency check for these three quantities. The consistency would remove any remaining doubts about the quantum standards and justify a redefinition of the International System of Units [3].A metallic electron pump with a relative uncertainty of a few parts in 10 8 in its current has been achieved by utilizing seven tunnel junctions in series, forming six gated islands [4]. However, the operation frequency was limited to the megahertz range because of adiabaticity requirements for the high number of islands. These low current signals, of the order of 1 pA, are sensitive to thermal fluctuations and hence are not satisfactory for the planned quantum metrological triangle experiments [3]. Other single-electron pumping experiments have been carried out in different systems such as hybrid normal-metal-superconductor turnstiles [5], GaAs/AlGaAs nanowire quantum dots [6], InAs nanowire double quantum dots [7], metal-oxidesemiconductor field-effect transistors (MOSFETs) in Si nanowires [8], and GaAs quantum dots [9].In this paper, we employ a silicon quantum dot [10] shown in Fig. 1(a,b) as a test-bed for the current source. The device was fabricated on a high-resistivity (ρ > 10 kΩ cm at 300 K) silicon substrate. An industry-compatible MOSFET fabrication process is adapted to realize our quantum dot system [11]. The source and drain were thermally diffused with phosphorus and a high-quality gate oxide was grown thermally yielding a low Si/SiO 2 interface trap density of * Electronic