Determination of the density of defect states by thermally stimulated conductivity studied from numerical simulations

Schmidt, Javier Alejandro; Koropecki, R. R.; Arce, R.; Dussán, A.; Buitrago‐Sierra, Robison

doi:10.1016/j.jnoncrysol.2004.02.065

Cited by 11 publications

(16 citation statements)

References 10 publications

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“…TSC t n eµ σ = (7) As in [6,7], the model distribution N t (ε) of electron traps consists of an exponential 'tail' of conduction band and a deep Gaussian 'bump'. The distribution corresponds roughly to that established in a-Si:H. The basic calculation parameters are listed in Table 1.…”

Section: Methodsmentioning

confidence: 99%

“…In recent years it has been demonstrated via numerical simulations that the MT model well reproduces the shape of TSC curves measured in a-Si:H, as well as their dependencies on the heating rate and the initial temperature [6,7]. It has been shown that the Fritzsche-Ibaraki method of TSC analysis [1], ameliorated by other authors [6], makes possible to determine the energy distribution of trapping states in a solid with good accuracy.…”

Section: Introductionmentioning

confidence: 93%

“…(2) can be considered as the extension of the formula obtained by Fritzsche and Ibaraki [1] and re-derived in [6] to the case of an arbitrary trap occupancy. In [6] more elaborated formulas for ε 0 (T) and N t [ε 0 (T)] were given. It will be shown, however, that Eqs.…”

Section: Formulas For Determining Trap Distributionmentioning

confidence: 99%

“…It has been shown that the Fritzsche-Ibaraki method of TSC analysis [1], ameliorated by other authors [6], makes possible to determine the energy distribution of trapping states in a solid with good accuracy. The applicability of the method requires, among others, almost complete filling of traps by excess carriers at the onset of TSC experiment.…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Numerical study of the dependence of thermally stimulated currents in disordered solids on initial trap occupancy

Tomaszewicz

Grygiel

2007

J. Phys.: Conf. Ser.

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 93%

Section: Formulas For Determining Trap Distributionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Numerical study of the dependence of thermally stimulated currents in disordered solids on initial trap occupancy

Tomaszewicz

Grygiel

2007

J. Phys.: Conf. Ser.

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“…We compare these results with DOS measurements obtained from other reported methods. Based on numerical calculations of TSC and steady-state photoconductivity experiments [11], we show that the DOS is largely inuenced by experimental errors introduced by the estimation of the µτ (electron mobility times electron lifetime) product.…”

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confidence: 99%

Density of States in Thin Boron-Doped Microcrystalline Silicon Films Estimated from the Thermally Stimulated Conductivity Method

2014

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In this work, a series of boron-doped microcrystalline silicon samples [µc-Si:H(B)] were deposited by plasma--enhanced chemical vapor deposition, using silane (SiH4) diluted in hydrogen, and diborane (B2H6) as a dopant gas. The concentration of B2H6 in SiH4 was varied in the range of 0100 ppm. The density of states was obtained from the thermally stimulated conductivity technique and compared with results obtained by the modulated photoconductivity methods. To explain the poor agreement between the density of states obtained from the thermally stimulated conductivity and the other methods, it is shown by means of numerical simulations that the density of states is very sensitive to experimental errors introduced in the calculation of the µnτn product (mobility of electron × lifetime of the electron). The thermally stimulated conductivity method is applied here for the rst time to calculate the density of defect states in the forbidden band of µc-Si:H samples.

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Density-of-states in microcrystalline silicon from thermally-stimulated conductivity

Souffi

Bauer

Brüggemann

2006

Journal of Non-Crystalline Solids

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Determination of the density of defect states by thermally stimulated conductivity studied from numerical simulations

Cited by 11 publications

References 10 publications

Numerical study of the dependence of thermally stimulated currents in disordered solids on initial trap occupancy

Numerical study of the dependence of thermally stimulated currents in disordered solids on initial trap occupancy

Density of States in Thin Boron-Doped Microcrystalline Silicon Films Estimated from the Thermally Stimulated Conductivity Method

Density-of-states in microcrystalline silicon from thermally-stimulated conductivity

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