Determination of the deformation potential of shallow donors in silicon

Belyaev, A. E.; Vinetsky, R.M.; Gorodnichii, O. P.

doi:10.1016/0038-1098(82)90880-8

Cited by 2 publications

(2 citation statements)

References 13 publications

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“…The influence of the exchange scattering on the hot electron emission has not been studied up to now in spite of its known essential effects in optical, electrical and magnetic properties of semiconductors (see, e.g. [3,9,10]). The authors of given papers have revealed [11] in ZnS(Se):Cr TFELS not only the emission in the nearinfrared region (1.8…2.7 μm) that results from 5 E → 5 T 2 transition in the 3d shell of Cr 2+ ion, but also the weaker emission ranged from 0.4 to 1.0 μm with the intensity increasing monotonically when hν decreases apart its modulation by interference extrema (Fig.…”

Section: Introductionmentioning

confidence: 99%

Momentum relaxation of hot electrons during radiative intraband indirect transitions in ZnS:Cr

Vlasenko¹

2005

Semicond. phys. quantum electron. optoelectron.

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A structureless emission in the visible region was revealed in ZnS:Cr thin-film electroluminescent structures (TFELS) apart the main near-infrared emission resulted from the 5 E → 5 T 2 transition in the 3d shell of the Cr 2+ ion. This emission stems from intraband indirect transitions of hot electrons. The comparison between experimental intensity spectral dependence and the same dependence calculated for different mechanisms of the momentum relaxation shows that the scattering on charged impurities takes place during this emission. The Cr + ions existing in ZnS:Cr in addition to predominant Cr 2+ ions serve as scattering charge centers. This is confirmed by study of the magnetic field (H) effect on the intensity (I) of the hot electron emission at 4.2 K. The experimental dependence I(H) coincides with the calculated magnetic field dependence of the exchange scattering cross-section of Cr + ion with the spin 5/2 and gfactor 2. This result also indicates that both the Coulomb interaction with Cr + ions and the exchange scattering on them present during the hot electron emission in the ZnS:Cr TFELS.

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Section: Introductionmentioning

confidence: 99%

Momentum relaxation of hot electrons during radiative intraband indirect transitions in ZnS:Cr

Vlasenko¹

2005

Semicond. phys. quantum electron. optoelectron.

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“…Consequently, uniaxial elastic deformation can influence on the total concentration of charge carriers in the conduction band (c-band) due to changes of the depth of donor levels Е d related with the different (non-equivalent) minima of the energy. The change in the overlapping degree of the wave functions of impurity centers under the action of uniaxial elastic deformation also influences on the activation energy of impurity centers [9].…”

Section: Introductionmentioning

confidence: 99%

Features of piezoresistance in heavily doped n-silicon crystals

Гайдар¹

2013

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract.It has been shown that in silicon single crystals heavily doped with arsenic the presence of the temperature gradient at the interface of the liquid and solid phases in the process of growing them from a melt does not lead to anisotropy of piezoresistance under the passing current both along the direction of deforming load (J || X || 111) and perpendicularly to it (J  X || 111). This is considered as an evidence of the dominant influence of randomization in spatial distribution of a dopant due to kT (at T  1685 K) during the growth of single crystals.

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Determination of the deformation potential of shallow donors in silicon

Cited by 2 publications

References 13 publications

Momentum relaxation of hot electrons during radiative intraband indirect transitions in ZnS:Cr

Momentum relaxation of hot electrons during radiative intraband indirect transitions in ZnS:Cr

Features of piezoresistance in heavily doped n-silicon crystals

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