Determination of the branch-point energy of InN: Chemical trends in common-cation and common-anion semiconductors

King, P. D. C.; Veal, T. D.; Jefferson, P. H.; Hatfield, S. A.; Piper, Louis F. J.; McConville, Christopher F; Fuchs, F.; Furthmüller, J.; Bechstedt, F.; Lu, Hai; Schaff, W. J.

doi:10.1103/physrevb.77.045316

Cited by 107 publications

(64 citation statements)

References 39 publications

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“…24 If the BPE is situated close to the CBM/VBM, the formation of donor/acceptor native defects becomes favorable. 25 One can align the energy bands of different semiconductors using the BPE. The band alignment of wurtzite (wz) ZnO and ZnAl 2 O 4 spinel is shown in Fig.…”

Section: Band Alignment and Conductivitymentioning

confidence: 99%

First-principles study of possible shallow donors in ZnAl2O4spinel

et al. 2013

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ZnAl 2 O 4 (gahnite) is a ceramic which is considered a possible transparent conducting oxide (TCO) due to its wide band gap and transparency for UV. Defects play an important role in controlling the conductivity of a TCO material along with the dopant, which is the main source of conductivity in an otherwise insulating oxide. A comprehensive first-principles density functional theory study for point defects in ZnAl 2 O 4 spinel is presented using the Heyd, Scuseria, and Ernzerhof hybrid functional (HSE06) to overcome the band gap problem. We have investigated the formation energies of intrinsic defects which include the Zn, Al, and O vacancy and the antisite defects: Zn at the Al site (Zn Al ) and Al at the Zn site (Al Zn ). The antisite defect Al Zn has the lowest formation energy and acts as a shallow donor, indicating possible n-type conductivity in ZnAl 2 O 4 spinel by Al doping.

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Section: Band Alignment and Conductivitymentioning

confidence: 99%

First-principles study of possible shallow donors in ZnAl2O4spinel

et al. 2013

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“…Therefore, a surface electron accumulation is expected for In content exceeding 40%, while a surface depletion is expected for the rest of the composition values. This effect has been experimentally confirmed by King et al using X-ray photoemission spectroscopy [Veal 2006, King 2008b.…”

Section: Effect Of Native Defects On the Intrinsic N-type Dopingsupporting

confidence: 54%

“…In addition, the electron (n(z)) and hole (p(z)) concentration variation in the near-surface region of each case is shown. Taken from [King 2008b]. …”

Section: Effect Of Native Defects On the Intrinsic N-type Dopingmentioning

confidence: 99%

Investigations on III-Nitrides nanostructures: application to Renewable Energies and Bio-Sensing

Rodriguez¹,

David²

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“…Group III nitrides are among the most promising optoelectronic materials because they possess excellent intrinsic properties such as a wide range of direct transition-type energy bandgaps from 6.2 eV for AlN [1,2] to 0.6-0.8 eV for InN [3][4][5][6], strong bond between nitrogen and each group III atom, high thermal conductivity, high electron saturation velocity [6][7][8][9], and several others. As such, these materials offer various promising applications in high-efficiency light emitting diodes (LEDs), laser diodes (LDs), photodiodes (PDs) operating in visible and ultraviolet (UV) regions, as well as highpower electronic devices.…”

Section: Introductionmentioning

confidence: 99%