Determination of the band discontinuities of GaSb(n)–Ga0.83Al0.17Sb(p) heterojunction by capacitance–voltage measurements

Abstract

Experimental results obtained by capacitance‐voltage measurements for an LPE grown GaSb(n)–Ga0.83Al0.17Sb(p) heterojunction are described. They permit the extraction of the discontinuities in the bands ΔEc = 0.14 eV and ΔEv = 0.10 eV. The resulting relation ΔEc = 0.62 ΔEg is different from Dingle's rule but in agreement with other works. Also Ga1−xAlxSb electron affinity (for x = 0.17) is deduced to 3.92 eV.