Determination of the Average Absorbed Energy  of Electrons Beam in Objects at Radiation Processing

Lazurik, V.T.; Popov, Grigory; Zimek, Z.

doi:10.46813/2019-124-134

Cited by 3 publications

(2 citation statements)

References 3 publications

(6 reference statements)

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“…However, the dose induced by electrons in GaAs material changes with material depth as is shown in figure 2. As the thickness of GaAs detector material was only 230 µm, the dose was increasing from the surface to the bottom of detector material by about 23% according to simulation (figure 2) [9], which is in agreement with the experimental dose measurement giving the average difference in measured bottom-top doses of 19%.…”

Section: Irradiation By Electronssupporting

confidence: 86%

Radiation hardness study of semi-insulating GaAs detectors against 5 MeV electrons

et al. 2018

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A radiation hardness study of Semi-Insulating (SI) GaAs detectors against 5 MeV electrons is described in this paper. The influence of two parameters, the accumulative absorbed dose (from 1 to 200 kGy) and the applied dose rate (20, 40 or 80 kGy/h), on detector spectrometric properties were studied. The accumulative dose has influenced all evaluated spectrometric properties and also negatively affected the detector CCE (Charge Collection Efficiency). We have observed its systematic reduction from an initial 79% before irradiation down to about 51% at maximum dose of 200 kGy. Relative energy resolution was also influenced by electron irradiation. Its degradation was obvious in the range of doses from 24 up to a maximum dose of 200 kGy, where an increase from 19% up to 31% at 200 V reverse voltage was noticed. On the other hand, a global increase of detection efficiency with accumulative absorbed dose was observed for all samples. Concerning the actual detector degradation we can assume that the tested SI GaAs detectors will be able to operate up to a dose of 300 kGy at least, when irradiated by 5 MeV electrons. The second investigated parameter of irradiation, the dose rate of chosen ranges, did not greatly alter the spectrometric properties of studied detectors.

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Section: Irradiation By Electronssupporting

confidence: 86%

Radiation hardness study of semi-insulating GaAs detectors against 5 MeV electrons

et al. 2018

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“…12) Experiments based on computer calculations were conducted for an electron beam with varying energy spread, satisfying the conditions of a specific mathematical model. The depth dose distribution, initiated by an electron beam in an aluminum target, was calculated based on the Monte-Carlo method and the Mode-RTL computer program [5]. Calculations were carried out for a mono-energetic electron beam with energy of 2 MeV and for an electron beam with different energy scattering.…”

Section: Operation Of Accelerators In Radiation Treatment Process Gen...mentioning

confidence: 99%

International Journal of Electronics and Telecommunications

Bułka,

Zimek

2021

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Ongoing energy measurement is one of the parameters such as: electron beam current, transporter speed, or scanning width, that must be recorded according to the conditions imposed in the accelerator validation procedure. Described measurement method based on the use of a secondary electron collecting electrode has been tested at the electron beam linear accelerator installation typically used for radiation sterilization. Data processing and presentation of the electron beam characteristics is based on the information obtained via dedicated pulse acquisition interface. The energy spectra parameters provide data for modeling and calculation of dose distribution for irradiation process optimization and also knowledge of accelerator RF alignment in case of service.

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Two-Parametric Beam Model for Dosimetry of the Process of Electron Irradiation of Materials With Low Density and Atomic Number

Lazurik¹,

Popov²,

Zimek³

2021

Problems of Atomic Science and Technology

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The work is devoted to studying the possibility of using a two-parametric model of an electron beam to describe the depth distributions of the electron dose in materials with a low density and an effective atomic number. In this model, the parameters are determined by fitting the semi-empirical model (PFSEM-method) to the results of meas-urements of the depth-dose distribution in a dosimetric wedge. The depth-dose distributions in a birchwood wedge were measured at the Institute of Nuclear Chemistry and Technology in Warsaw, Poland. The parameters of the electron beam incident on the wedge were determined by the PFSEM method. The Monte Carlo simulations of the depth-dose distribution in the wedge for the process of electron irradiation, the characteristics of which are deter-mined by the PFSEM method, have been carried out. It is shown that there is a satisfactory agreement between the measurement results and the Monte Carlo simulation of the depth-dose distribution. The advantages of describing depth-dose distributions in a wedge based on a two-parametric model of an electron beam in comparison with tradi-tional methods of polynomial approximation of measurement results are discussed.

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Determination of the Average Absorbed Energy of Electrons Beam in Objects at Radiation Processing

Cited by 3 publications

References 3 publications

Radiation hardness study of semi-insulating GaAs detectors against 5 MeV electrons

Radiation hardness study of semi-insulating GaAs detectors against 5 MeV electrons

International Journal of Electronics and Telecommunications

Two-Parametric Beam Model for Dosimetry of the Process of Electron Irradiation of Materials With Low Density and Atomic Number

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