Determination of the alloy scattering potential in modulation-doped In0.53Ga0.47As/In0.52Al0.48As heterojunctions from magnetotransport measurements

Tiraş, E.; Altınöz, Sacide; Cankurtaran, Mustafa; Çelik, Hüseyin; Balkan, N.

doi:10.1007/s10853-005-1599-2

Cited by 6 publications

(4 citation statements)

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“…The scattering mechanisms of two-dimensional (2D) carriers in III-V heterostructures are well described [8,10,11,[14][15][16][17][18][19]. The scattering mechanisms we used in Al 0.25 Ga 0.75 N/GaN heterostructures are: polar optical phonon scattering, acoustic phonon scattering due to deformation potential coupling, acoustic phonon scattering due to piezoelectric coupling, background impurity scattering, dislocation scattering, ionized impurity scattering, and interface roughness scattering.…”

Section: Scattering Mechanismsmentioning

confidence: 99%

“…At high temperatures polar optical phonon scattering is dominant in GaN, a highly polar material [19], and due to the large optical-phonon energy, scattering of electrons by optical phonons is inelastic [10,16]. It has been shown that the three-dimensional (3D) approach to polar opticalphonon scattering is justifiable for the 2DEG (Refs [20][21][22][23]).…”

Section: Polar Optical Phonon Scatteringmentioning

confidence: 99%

“…In highly polar materials such as GaN, the mobility limited by acoustic piezoelectric scattering can be calculated by the relaxation time approach. The ratio of the momentum relaxation time (τ DP ) for acoustic deformation potential scattering to that (τ PE ) for acoustic piezoelectric scattering in a 2D electron gas is given by [16]:…”

Section: Acoustic Phonon Scatteringmentioning

confidence: 99%

“…The mobility (μ PE ) limited by piezoelectric scattering can be obtained from [16] μ PE = μ DP τ PE τ DP .…”

Section: Acoustic Phonon Scatteringmentioning

confidence: 99%

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Determination of the LO phonon energy by using electronic and optical methods in AlGaN/GaN

et al. 2012

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Abstract:The longitudinal optical (LO) phonon energy in AlGaN/GaN heterostructures is determined from temperature-dependent Hall effect measurements and also from Infrared (IR) spectroscopy and Raman spectroscopy. The Hall effect measurements on AlGaN/GaN heterostructures grown by MOCVD have been carried out as a function of temperature in the range 1.8-275 K at a fixed magnetic field. The IR and Raman spectroscopy measurements have been carried out at room temperature. The experimental data for the temperature dependence of the Hall mobility were compared with the calculated electron mobility. In the calculations of electron mobility, polar optical phonon scattering, ionized impurity scattering, background impurity scattering, interface roughness, piezoelectric scattering, acoustic phonon scattering and dislocation scattering were taken into account at all temperatures. The result is that at low temperatures interface roughness scattering is the dominant scattering mechanism and at high temperatures polar optical phonon scattering is dominant. PACS

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