Determination of Suitable Transport Layers in Light of Interface Defect States in MASnX<sub>3</sub>‐Based Perovskite Solar Cell

Mottakin, M.; Sobayel, K.; Ismail, Rizalafande Che; Shahiduzzaman, Md.; Muhammad, Ghulam; Ibrahim, Mohd Adib; Akhtaruzzaman, Md.; Hossain, Ejarder Sabbir

doi:10.1002/pssr.202200216

Cited by 7 publications

(6 citation statements)

References 38 publications

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“…These carrier recombination centers lead to the formation of shallow and deep transition energy levels in the forbidden region, which attracts the trap-free carriers [30]. The shallow defect levels are much easier to create and take up a larger percentage of the defect density in perovskite films than deep defects [31]. The creation of these electron transition levels is based on the formation energy of the point defects.…”

Section: Impact Of Different Etls On the Performance Of Lnmo-based Pscsmentioning

confidence: 99%

Minimization of carrier recombination in La₂NiMnO₆ double perovskite solar cells by optimizing defects and band offsets

Yadav

Khare

2023

Phys. Scr.

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In the present work, an extensive study has been carried out on the parameters that govern the non-radiative recombination losses associated with the absorber double perovskite material. Four different device configurations have been proposed by incorporating different electron transport layers (ETL) namely tungsten disulfide (WS2), tungsten trioxide (WO3), zinc selenide (ZnSe), and strontium titanate (STO) with La2NiMnO6 (LNMO) double perovskite material as an active layer and cuprous oxide (Cu2O) as a hole transport layer (HTL). In this investigation, the role of band offsets in the collection, transportation, and recombination of charge carriers has been examined in detail. Further, the impact of thickness and the defect positions i.e. shallow defects and deep defects on the photovoltaic (PV) parameters of the cells has been thoroughly elucidated. For the proper collection of charge carriers, the ideal barrier height between HTL and back contact (C, Ni, Ag, and Au) at various valence band maximum (VBM) levels has also been investigated. Interestingly, the results of the present simulation reveal that the WS2-based device with configuration FTO/WS2/LNMO/Cu2O/Au shows the highest PCE of 24.08% after optimization. The findings and interpretation of this work demonstrate that La2NiMnO6 an eco-friendly and non-toxic material can be used to produce high-efficiency perovskite devices.

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Section: Impact Of Different Etls On the Performance Of Lnmo-based Pscsmentioning

confidence: 99%

Minimization of carrier recombination in La₂NiMnO₆ double perovskite solar cells by optimizing defects and band offsets

Yadav

Khare

2023

Phys. Scr.

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“…So, the addition of additives is a way to reduce the defect and enhance the PCE. In our previous study on MASnI 3 -based PSCs, we observed that not only the types and concentration of defects but also defect position play a crucial role in device performance [16]. Wu et al investigated carrier recombination properties in correlation with the defect and declared that the defect boosts the nonadiabatic electron-vibrational coupling and traps the free carriers [17].…”

Section: Introductionmentioning

confidence: 99%

Correlation between defect properties and the performance of eco-friendly CsSnI₃-based perovskite solar cells

Mottakin,

Su’Ait,

Chelvanathan

et al. 2024

Semicond. Sci. Technol.

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This study investigates the potential use of eco-friendly, all-inorganic CsSnI3 perovskite (PVK) as an absorber layer. Despite having higher temperature stability of CsSnI3,the challenge is to get a uniform and defect-free film that hinders the performance. To accomplish this goal, we investigated several PSC performance-related variables, including material defect density (Nt), transport materials, layer thickness, temperature impacts, and back contact work functions. TiO2 demonstrates the best performances as ETL and PEDOT:PSS as HTL. Negative valence band or conduction band offset values indicate no barrier preventing photogenerated carriers from flowing into the charge transport layers. The simulation result shows that HTL thickness shows a higher impact than ETL thickness. For the PVK thickness of 500 nm and a carrier density of 1018 cm−3, the device offers an optimum PCE of 20.1 %. The PVK defect significantly impacts performance more than the interface defect. Higher recombination occurs at the TiO2-CsSnI3 interface. Defects in the deep-level trap (DLT) at the middle of the band gap energy are detrimental to device performance. The proposed structure's temperature coefficient (CT) is approximately ‒0.367 % K‒1, indicating excellent thermal stability in an open environment. Selection of 'A' cation, addition of additives, or carefully controlled fabrication technique can passivate the defect. This research shows the strategy for creating defects-free perovskite solar cell devices, ultimately enhancing performance and stability.

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“…In recent years, organic-inorganic lead halide perovskite (PSK) material has advanced and redefined the development strategy for high-performance optoelectronic devices like solar cells, LEDs, photodetectors, etc. [1][2][3][4] Perovskite solar cells (PSCs) are at the forefront of next-generation thin-film photovoltaic technologies as efficiency above 25% within a few years of research has been proven. A perovskite layer can be considered as sandwiched between two charge transport layers (CTLs).…”

Section: Introductionmentioning

confidence: 99%

Theoretical verification of using the Ga-doped ZnO as a charge transport layer in an inorganic perovskite solar cell

Ahmed

Akhtaruzzaman

Zulhafizhazuan

et al. 2023

Jpn. J. Appl. Phys.

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The study encompasses the idea to employ a single bandgap-graded transport layer in lieu of two different (transparent conducting oxide(TCO) and electron transport layer(ETL) layers in the perovskite solar cell to increase the overall device's functionality using Numerical simulation. The thickness and defect density of the absorber layer have been varied to identify the optimal cell parameter values. Maximum power conversion efficiency (PCE) has been recorded as 22.17 % at 1E13 cm-3 defect density in the absorber. These findings demonstrate the numerical modelling limitations for the relationship between defect mechanism and performance. The activation energy and effects of series resistance (Rs) on solar cells have also been assessed. The temperature degradation gradient of the proposed structure GZO/CsGeI3/NiO/Au has been found 3% only with a PCE of 22.17% that validates the concept of using bandgap graded transport layer and paves the way for a new era for perovskite research.

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Determination of Suitable Transport Layers in Light of Interface Defect States in MASnX₃‐Based Perovskite Solar Cell

Abstract: Figure 8. Interface defects versus bulk defects: a) effect of bulk defect of absorber layer on cell performance; b) effect of ETL/absorber interface defect (IL1) on cell performance.

Cited by 7 publications

References 38 publications

Minimization of carrier recombination in La₂NiMnO₆ double perovskite solar cells by optimizing defects and band offsets

Minimization of carrier recombination in La₂NiMnO₆ double perovskite solar cells by optimizing defects and band offsets

Correlation between defect properties and the performance of eco-friendly CsSnI₃-based perovskite solar cells

Theoretical verification of using the Ga-doped ZnO as a charge transport layer in an inorganic perovskite solar cell

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Determination of Suitable Transport Layers in Light of Interface Defect States in MASnX3‐Based Perovskite Solar Cell

Abstract: Figure 8. Interface defects versus bulk defects: a) effect of bulk defect of absorber layer on cell performance; b) effect of ETL/absorber interface defect (IL1) on cell performance.

Cited by 7 publications

References 38 publications

Minimization of carrier recombination in La2NiMnO6 double perovskite solar cells by optimizing defects and band offsets

Minimization of carrier recombination in La2NiMnO6 double perovskite solar cells by optimizing defects and band offsets

Correlation between defect properties and the performance of eco-friendly CsSnI3-based perovskite solar cells

Theoretical verification of using the Ga-doped ZnO as a charge transport layer in an inorganic perovskite solar cell

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Determination of Suitable Transport Layers in Light of Interface Defect States in MASnX₃‐Based Perovskite Solar Cell

Minimization of carrier recombination in La₂NiMnO₆ double perovskite solar cells by optimizing defects and band offsets

Minimization of carrier recombination in La₂NiMnO₆ double perovskite solar cells by optimizing defects and band offsets

Correlation between defect properties and the performance of eco-friendly CsSnI₃-based perovskite solar cells