Determination of structural and optical parameters of CuO thin films prepared by double dip technique

Abstract

Cupric oxide (CuO) thin films are deposited on glass substrates by double dip method at various molar concentrations of copper sulphate salt. Growth mechanism is derived using oxolation process. The structural studies revealed the deposited films exhibited polycrystalline nature with monoclinic structure. The change in the molar concentration of copper sulphate salt has pronounced effect on the microstructural properties of deposited thin films. XPS and EDS spectra confirm the presence of Cu and O. Micro Raman spectra shows two A g and B g active Raman mode peaks corresponding to CuO phase. Deposited films showed a high absorbance in the visible range with the bandgap value of 1.3 eV making it a suitable material as semiconductor tandem absorber for solar cells. Optical constants such as refractive index (n), extinction coefficient (k), optical conductivity (r) and dielectric constants (e) were evaluated using an approximation protocol developed from well recognized procedures using the data obtained from UV spectroscopic technique. The prepared CuO thin films are identified as suitable candidates for optoelectronic devices and solar cell fabrication.

Effect of bath concentration on the growth and photovoltaic response of SILAR-deposited CuO thin films

“…The diffraction peaks presented at 2h = 35.584 and 38.772 corresponds to (002) and (200) planes of monoclinic CuO; it is in good agreement with the reported JCPDS data [39-0354]. Similar results of CuO have also been reported in the literature [32,33]. It is found to show an increase in diffraction peaks with the increase in copper salt concentration in the bath, and this increase in peak with copper concentration can be attributed to the increase in crystallinity of CuO films at increased concentration of copper ions.…”

“…In this work, three Raman-active optical phonons have been identified and they are comparable to the earlier reports found in the literature, where different techniques were used to prepare CuO thin film [32]. This Raman analysis of the CuO sample confirms that the three known bands at 297, 345 and 631 cm -1 corresponds to Ag (297 cm -1 ), Bg (1) (341 cm -1 ) and Bg (2) (628 cm -1 ), respectively, which is in good agreement with the previously reported data [32]. And also it confirms that no Cu 2 O modes are presented in the CuO nanostructures prepared by us.…”

Effect of adsorption time on structural, optical and electronic properties of SILAR deposited CuO thin films

“…The three Raman peaks obtained at 295, 343 and 628 cm -1 can be assigned to one A g and two B g modes, respectively. This observation has an agreement with the previous reports [18]. Figure 3 shows the scanning electron micrograph (SEM) of SILAR deposited CuO thin films prepared at different adsorption times.…”

Structural and optical characterization of copper oxide composite thin films elaborated by GLAD technique

“…The latter has affected oxygen diffusion, interfacial strain due to the difference in thermal expansion coefficients[35]. The initial stage of copper oxidation in thin film is the oxygen surface diffusion which is the dominant mechanism [36,37] and had eminent role in the kinetics of the oxidation stage[38].…”