Determination of some main parameters for quantum values of GaAlAs/GaAs transmission-mode photocathodes in near-ir region

Farsakoğlu, Ömer Faruk; Zengin, Dursun; Kocabas, Hikmet

doi:10.1117/12.130264

Cited by 12 publications

(2 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In order to evaluate the intrinsic cathode performance parameters such as electron diffusion length, back interface recombination velocity and surface electron escape probability of the two different t-mode photocathodes, we compare the measured quantum yield curves with the theoretical curves respectively according to the uniform-doping and exponential-doping quantum yield equations, which are given by 5,28 …”

Section: Discussionmentioning

confidence: 99%

Influence of exponential-doping structure on photoemission capability of transmission-mode GaAs photocathodes

Zhang

Niu

Zhao

et al. 2010

Journal of Applied Physics

View full text Add to dashboard Cite

Surface electronic structure in transition-metal (Cr and Mn) doped GaAs (001) studied by in situ photoemission spectroscopy Appl.In order to verify the actual effect of an exponential-doping structure on cathode performance, an exponential-doping structure has been applied to the preparation of the transmission-mode GaAs photocathode via molecular beam epitaxy technique. Compared with the uniform-doping photocathode, the activation and spectral response results show that the exponential-doping photocathode can achieve a higher photoemission capability. In addition, based on the revised uniform-doping and exponential-doping transmission-mode quantum yield equations, the cathode performance parameters such as electron average transport length and electron escape probability of the exponential-doping photocathode are obtained, which are greater than those of the uniform-doping one. The improvement in the cathode performance is attributed to the built-in electric field arising from this special doping structure, which effectively increases the electron transport efficiency and escape probability.

show abstract

Section: Discussionmentioning

confidence: 99%

Influence of exponential-doping structure on photoemission capability of transmission-mode GaAs photocathodes

Zhang

Niu

Zhao

et al. 2010

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…8. [21,22] To fit the spectral response of the exponential doping photocathode module, the influence of the GaAlAs window layer must be removed. Therefore, Eq.…”

Section: Gaas Active Layer Polementioning

confidence: 99%

Comparative research on the transmission-mode GaAs photocathodes of exponential-doping structures

Chen¹,

Qian²,

Zhang³

et al. 2012

Chinese Phys. B

View full text Add to dashboard Cite

Early research has shown that the varied doping structures of the active layer of GaAs photocathodes have been proven to have a higher quantum efficiency than uniform doping structures. On the basis of our early research on the surface photovoltage of GaAs photocathodes, and comparative research before and after activation of reflection-mode GaAs photocathodes, we further the comparative research on transmission-mode GaAs photocathodes. An exponential doping structure is the typical varied doping structure that can form a uniform electric field in the active layer. By solving the one-dimensional diffusion equation for no equilibrium minority carriers of transmission-mode GaAs photocathodes of the exponential doping structure, we can obtain the equations for the surface photovoltage (SPV) curve before activation and the spectral response curve (SRC) after activation. Through experiments and fitting calculations for the designed material, the body-material parameters can be well fitted by the SPV before activation, and proven by the fitting calculation for SRC after activation. Through the comparative research before and after activation, the average surface escape probability (SEP) can also be well fitted. This comparative research method can measure the body parameters and the value of SEP for the transmission-mode GaAs photocathode more exactly than the early method, which only measures the body parameters by SRC after activation. It can also help us to deeply study and exactly measure the parameters of the varied doping structures for transmission-mode GaAs photocathodes, and optimize the Cs-O activation technique in the future.

show abstract

Roles of cesium and oxides in the processing of gallium aluminum arsenide photocathodes

Chen

Zhao

Chang

et al. 2014

Materials Science in Semiconductor Processing

View full text Add to dashboard Cite

Determination of some main parameters for quantum values of GaAlAs/GaAs transmission-mode photocathodes in near-ir region

Cited by 12 publications

References 0 publications

Influence of exponential-doping structure on photoemission capability of transmission-mode GaAs photocathodes

Influence of exponential-doping structure on photoemission capability of transmission-mode GaAs photocathodes

Comparative research on the transmission-mode GaAs photocathodes of exponential-doping structures

Roles of cesium and oxides in the processing of gallium aluminum arsenide photocathodes

Contact Info

Product

Resources

About