Determination of silicon oxide precipitate stoichiometry using global and local techniques

Nicolaï, J.; Burle, N.; Pichaud, B.

doi:10.1016/j.jcrysgro.2012.10.015

Cited by 13 publications

(19 citation statements)

References 3 publications

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Section: Discussioncontrasting

confidence: 99%

“…This is contrary to the results of many other authors (26)(27)(28) suggesting that the oxygen precipitates consist of substoichiometric SiO x with x between 1 and 1.1. These results were obtained by analyzing TEM data of many authors assuming diffusion limited growth (26), FTIR (27), and TEM combined with EDX analysis (28). Our results are more in agreement with the FTIR results published by Borghesi et al (14) who determined the plate-like precipitates as SiO 1.8 and Meduňa et al (25) who found the x in the range of 1.8 to 2.…”

Section: Discussioncontrasting

confidence: 99%

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Morphology of Oxygen Precipitates in RTA Pre-Treated Czochralski Silicon Wafers Investigated by FTIR Spectroscopy and STEM

Kot¹,

Kissinger²,

Schubert³

et al. 2014

ECS Trans.

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The influence of RTA pre-treatments at 1250 °C on the morphology and stoichiometry of oxygen precipitates was investigated by STEM and FTIR. The morphology of the oxygen precipitates depends on the temperature of the subsequent annealing. Annealing at 800 °C results first of all in the formation of 3D dendritic precipitates while during annealing at 900 °C or 1000 °C mainly plate-like and octahedral precipitates are formed. The absorption bands of the dendritic SiO x precipitates were identified and simulated based on effective medium theory. All regular plate-like and octahedral precipitates could be well fitted assuming x=2.

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Section: Discussioncontrasting

confidence: 99%

Section: Discussioncontrasting

confidence: 99%

Morphology of Oxygen Precipitates in RTA Pre-Treated Czochralski Silicon Wafers Investigated by FTIR Spectroscopy and STEM

Kot¹,

Kissinger²,

Schubert³

et al. 2014

ECS Trans.

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“…Based on the analysis of the growth kinetics, Vanhellemont proposed that their composition is rather that of SiO. 30 This was confirmed by FTIR studies by DeGryse et al 31 and TEM investigations of Nicolai et al 32 However, Borghesi et al determined the composition of plate-like precipitates by FTIR to be SiO 1.8 . 33 Meduňa et al also found the x of the SiO x precipitates in the range between 1.8 and 2 by FTIR.…”

Section: Discussionmentioning

confidence: 95%

Investigation of the Copper Gettering Mechanism of Oxide Precipitates in Silicon

Kissinger

Kot

Klingsporn

et al. 2015

ECS J. Solid State Sci. Technol.

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One of the reasons why the principal gettering mechanism of copper at oxide precipitates is not yet clarified is that it was not possible to identify the presence and measure the copper concentration in the vicinity of oxide precipitates. To overcome the problem we used a 14.5 nm thick thermal oxide layer as a model system for an oxide precipitate to localize the place where the copper is collected. We also analyzed a plate-like oxide precipitate by EDX and EELS and compared the results with the analysis carried out on the oxide layer. It is demonstrated that both the interface between the oxide precipitate being SiO 2 and the silicon matrix and the interface between the thermal oxide and silicon consist of a 2-3 nm thick SiO layer. As the results of these experiments also show that copper segregates at the SiO interface layer of the thermal oxide it is concluded that gettering of copper by oxide precipitates is based on segregation of copper to the SiO interface layer.

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“…Nicolai et al used infrared laser scattering tomo‐graphy (LST) and TEM to record octahedral oxide precipitate growth kinetics and showed that they are in agreement with oxygen diffusion limited SiO precipitate growth.…”

Section: Experimental Techniques To Determine the Composition Of Sioxmentioning

confidence: 89%

SiO_x precipitate composition in Si, revisited: Discussion closed?

Vanhellemont

2015

Physica Rapid Research Ltrs

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The composition SiOx of oxide precipitates in Si has been discussed for the past thirty years with experimentally estimated x ‐values ranging between 1 and 2. It is shown that this spread of x ‐values can be explained by calculating the average composition taking into account temperature and anneal time dependent size and shape of the precipitates and the limitations and probing volumes of the various characterization techniques. Hereby it is assumed that the oxygen‐rich (SiO2?) core of the precipitates is surrounded by a 2 nm thin SiO layer as revealed by recent electron energy loss spectroscopy analyses. For plate‐like precipitates thinner than and for octahedral precipitates smaller than 6 nm, x ≈ 1. For larger precipitates, the central part of the precipitate consists of SiOx with x close to 2 and the precipitate has an average x between 1 and 1.3 for plate‐like and up to 1.9 for octahedral precipitates. The predicted x ‐values for different precipitate sizes and morphologies, are compared with published experimental data. SiOx precipitate nucleation and initial growth should be simulated assuming x = 1 and Fourier transform infrared spectra of precipitates assuming a mixture of SiO2 and amorphous Si. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)

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Determination of silicon oxide precipitate stoichiometry using global and local techniques

Cited by 13 publications

References 3 publications

Morphology of Oxygen Precipitates in RTA Pre-Treated Czochralski Silicon Wafers Investigated by FTIR Spectroscopy and STEM

Morphology of Oxygen Precipitates in RTA Pre-Treated Czochralski Silicon Wafers Investigated by FTIR Spectroscopy and STEM

Investigation of the Copper Gettering Mechanism of Oxide Precipitates in Silicon

SiO_x precipitate composition in Si, revisited: Discussion closed?

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Determination of silicon oxide precipitate stoichiometry using global and local techniques

Cited by 13 publications

References 3 publications

Morphology of Oxygen Precipitates in RTA Pre-Treated Czochralski Silicon Wafers Investigated by FTIR Spectroscopy and STEM

Morphology of Oxygen Precipitates in RTA Pre-Treated Czochralski Silicon Wafers Investigated by FTIR Spectroscopy and STEM

Investigation of the Copper Gettering Mechanism of Oxide Precipitates in Silicon

SiOx precipitate composition in Si, revisited: Discussion closed?

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SiO_x precipitate composition in Si, revisited: Discussion closed?