Determination of Si2p electron attenuation lengths in SiO2

Fulghum, Julia E.; Stokell, Richard; McGuire, G. E.; Patnaik, B.; Yu, Ning; Yi, Zhao,; Parikh, N.

doi:10.1016/0368-2048(92)80038-a

Cited by 20 publications

(7 citation statements)

References 17 publications

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“…The above and the sputtering study are independent in their approach and their agreement indicates that the experimental values are valid. The average of these two values, 0.88 š 0.03, is close to that of Fulghum 17,18 and lies at the upper end of the range given by others in Table 2. It is very different from the theoretical value.…”

Section: Bulk Silicon Dioxidementioning

confidence: 55%

Ultrathin SiO₂ on Si II. Issues in quantification of the oxide thickness

Seah

Spencer

2002

Surface & Interface Analysis

196

221

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An analysis is made of various quantification issues concerning the analysis of ultrathin layers of SiO• at position 'B' at 28.5• from the surface normal in the [110] azimuth, which is equivalently good but may degrade for spectrometers with high angular resolution. If the same equation is used for calculating the thickness, position B leads to a calculated thickness that is 4% less than that measured for an average orientation, whereas data acquired for normal emission lead to a value 18% lower, and those measured at A are 2% higher. Measurements of the carbonaceous contamination confirm earlier conclusions that the contamination is better described using data for an average polymer than for glassy carbon.  Crown

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Section: Bulk Silicon Dioxidementioning

confidence: 55%

Ultrathin SiO₂ on Si II. Issues in quantification of the oxide thickness

Seah

Spencer

2002

Surface & Interface Analysis

196

221

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“…The validity of this approach was established; firstly by comparing the thickness of two SiO 2 /Si samples obtained by this method against the thickness obtained by Rutherford Backscattering Spectrometry (RBS), and ellipsometry [6], and secondly by comparing the thickness obtained by XPS against the thickness obtained by Nuclear Reaction Analysis [2]. The molar volume of Si is 12.056 cm 3 and the molar volume of SiO x N y is approximated as 23.5 cm 3 , from the molar volume of SiO 2 , which has a wide range from 20 to 27 cm 3 depending on the crystal structure [10].…”

Section: Resultsmentioning

confidence: 99%

“…n is the density of Si atoms in the corresponding layer, s is the photoionization cross section, l SiO x N y and l Si are the attenuation lengths of the photoelectrons in the overlayer and underlayer respectively, d is the thickness of the overlayer, and Q is the take-off angle [1][2][3]6,9]. The validity of this approach was established; firstly by comparing the thickness of two SiO 2 /Si samples obtained by this method against the thickness obtained by Rutherford Backscattering Spectrometry (RBS), and ellipsometry [6], and secondly by comparing the thickness obtained by XPS against the thickness obtained by Nuclear Reaction Analysis [2].…”

Section: Resultsmentioning

confidence: 99%

“…For very thin overlayers (less than 15 nm) angle-resolved XPS is the preferred method [1][2][3] although Auger electron spectroscopy, ellipsometry, nuclear reaction analysis (NRA) and Rutherford backscattering (RB) are also employed [4][5][6]. Owing to the the presence of oxygen/water even under high vacuum conditions and the very high reactivity of silicon towards oxygen (during and/or after overlayer preparations) it is practically impossible to obtain overlayers devoid of oxygen [7].…”

Section: Introductionmentioning

confidence: 99%

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XPS investigation of thin SiOx and SiOxNy overlayers

Birer

Sayan

Süzer

et al. 1999

Journal of Molecular Structure

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“…The IMFP is a function of the energy of the electron and of the structure of the investigated solid. Several empirical or semiempirical formulas have been proposed to compute the IMFP in solids (Seah and Dench, 1979;Powell, 1984;Penn, 1987;Tanuma et al, 1993;Baschenko and Nesmeev, 1991;Fulghum et al, 1992). According to the formulas of Seah and Dench (1979), the mean free path length for inelastic scattering is 538 a,,, =-+o.41-E t i n where am is the number of monolayers that can be converted in IMFP according to IMFP =a,,, x d Eq.…”

Section: Analytical Techniquementioning

confidence: 99%

Weathering and polymerization of tektites: An x‐ray photoelectron spectroscopy (XPS) investigation

Biino

Gröning

Meisel

1998

Meteorit & Planetary Scien

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Abstract-Tektites are natural glasses formed from terrestrial material that was melted and displaced by the impact of an extraterrestrial body. The surface and near-surface compositions of tektite glass results from fractionation during impact and ejection, and/or postsolidification weathering. The first goal of this study was to characterise the surface and near-surface (in the order of tens of angstroms) chemical composition of two tektites by x-ray photoelectron spectroscopy (XPS), and to estimate the importance of weathering vs. fi-actionation during flying. In order to separate the chemical modification due to weathering from that due to fractionation during ballistic flight, we studied two samples from the Australasian tektite strewn field. One of them was collected in a hot desert area (Nullarbor Plain, Australia) and the other, in a humid climate (Thailand). Our study reveals the presence of well-developed leached layers in both tektites. In the Australian tektite, Si is depleted in the topmost layers (a few tens of angstroms). A more complex chemical zoning is defined in the tektite from Thailand. These leached layers are comparable to those observed in weathered glasses, and therefore we conclude that weathering is responsible for the chemical composition of the surface and near-surface compositions. The second goal was to investigate the chemical environment of 0, N and C in the glass. The 0 peak was resolved into two bridging 0 components (Si-0-Si and Al-0-Si) that are comparable to 0 environments in artificial glasses. The binding energy of the C I , electron is typical for C-C and C-H bonds in hydrocarbons; minor organic acid components are also present. Nitrogen is only observed on the surface of the Thailand tektite. The binding energy of NI, is comparable to that of ammonia, and the surface enrichment in N is interpreted as due to sorption related to interactions between glass and fluid buffered by the organic material in the soil.

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Determination of Si2p electron attenuation lengths in SiO2

Cited by 20 publications

References 17 publications

Ultrathin SiO₂ on Si II. Issues in quantification of the oxide thickness

Ultrathin SiO₂ on Si II. Issues in quantification of the oxide thickness

XPS investigation of thin SiOx and SiOxNy overlayers

Weathering and polymerization of tektites: An x‐ray photoelectron spectroscopy (XPS) investigation

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Determination of Si2p electron attenuation lengths in SiO2

Cited by 20 publications

References 17 publications

Ultrathin SiO2 on Si II. Issues in quantification of the oxide thickness

Ultrathin SiO2 on Si II. Issues in quantification of the oxide thickness

XPS investigation of thin SiOx and SiOxNy overlayers

Weathering and polymerization of tektites: An x‐ray photoelectron spectroscopy (XPS) investigation

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Ultrathin SiO₂ on Si II. Issues in quantification of the oxide thickness

Ultrathin SiO₂ on Si II. Issues in quantification of the oxide thickness