2000
DOI: 10.1002/sca.4950220303
|View full text |Cite
|
Sign up to set email alerts
|

Determination of secondary electron spectra from insulators

Abstract: Summary:A new technique for the determination of secondary electron (SE) spectra of insulators in a scanning electron microscope environment is presented. It is based on a capacitatively coupled charge measurement by subjecting the insulating film to a controlled pulsed electron beam. With the use of a planar grid analyzer configuration, an algorithm is used to estimate the SE spectrum based on normalized values of the S-curve obtained. Secondary electron spectra from several insulating materials employed in i… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1

Citation Types

0
11
0

Year Published

2002
2002
2020
2020

Publication Types

Select...
6

Relationship

0
6

Authors

Journals

citations
Cited by 9 publications
(11 citation statements)
references
References 16 publications
(16 reference statements)
0
11
0
Order By: Relevance
“…(Note, however, that if these spectra are compared in the N ( E ) vs. E format these differences are minimized and visually the level of agreement is excellent in all cases.) The differences that exist between these two sets of data, and between the spectra presented here and the examples shown by Bleloch (1989), Whetten & Laponsky (1957) and Yong & Thong (2000), can probably be attributed to environmental factors, but also to the fact that different spectrometers and collection geometries were employed in each case. The energy spectra of SE emission is different at different take‐off angles from the surface because of the effects of SE transmission and reflection at the surface potential barrier (Keneko, 1990).…”
Section: Discussionmentioning
confidence: 54%
See 3 more Smart Citations
“…(Note, however, that if these spectra are compared in the N ( E ) vs. E format these differences are minimized and visually the level of agreement is excellent in all cases.) The differences that exist between these two sets of data, and between the spectra presented here and the examples shown by Bleloch (1989), Whetten & Laponsky (1957) and Yong & Thong (2000), can probably be attributed to environmental factors, but also to the fact that different spectrometers and collection geometries were employed in each case. The energy spectra of SE emission is different at different take‐off angles from the surface because of the effects of SE transmission and reflection at the surface potential barrier (Keneko, 1990).…”
Section: Discussionmentioning
confidence: 54%
“…It can be seen that the peak energy is typically about 5–6 eV, with the lowest being for silicon (4 eV) and the highest (11 eV) for Rh and Sb. These values are significantly higher than the 2–3 eV typically measured for clean samples under UHV conditions (Modinos, 1985), from partially cleaned samples examined at UHV (Whetten & Laponsky, 1957; Bleloch, 1989), and from insulators examined using a low duty‐cycle pulsed beam to eliminate charging (Yong & Thong, 2000). Because a thin layer of surface contamination acquires a positive charge during irradiation in the microscope the lowest energy secondaries passing through the film will be those most strongly retarded, leading to an upward shift in the apparent peak position.…”
Section: Discussionmentioning
confidence: 79%
See 2 more Smart Citations
“…There is therefore, very little space into which any energy analyser attachment can be placed within current SEM designs. Due to these technical limitations, only a small number of electron energy analyser attachments have proved capable of carrying out secondary electron energy spectroscopy (SEES) in the SEM [26][27][28][29] . It should be noted that the ad-hoc attempts of using in-built LVSEM SE detection systems to energy filter the SE detector signal have succeeded in providing image enhancement, but have not proved precise enough to carry out SE energy spectroscopy [30][31][32][33][34][35][36] .…”
mentioning
confidence: 99%