Determination of Schottky barrier height of graphene electrode on AlGaN/GaN heterostructure

Pandit, Bhishma; Kim, Jae-Ho; Cho, Jaehee

doi:10.1063/5.0043981

Cited by 8 publications

(4 citation statements)

References 40 publications

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“…R was presented as a function of EQE that could be denoted as [ 11 ]

R = \frac{J_{\text{ph}}}{P_{\text{in}}} = \text{EQE} \frac{\lambda q}{h c}

where λ is the wavelength of the incident light, q is the elementary charge, and c is the velocity of light in a vacuum. D * of PDs is related to R , and I dark is the dark current, A is the active area, D * can be calculated by the formula [ 12 ]

D^{*} = \frac{A^{\frac{1}{2}} R}{\left(\left(\right. 2 q I_{\text{dark}} \left.\right)\right)^{\frac{1}{2}}}

…”

Section: Resultsmentioning

confidence: 99%

AlGaN‐Based Solar‐Blind Ultraviolet Detector with a Response Wavelength of 217 nm

Zhang,

Zheng,

Cheng

et al. 2023

Physica Status Solidi (a)

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The research of the high Al(x = 0.75) component has always been the focus of the AlGaN solar‐blind ultraviolet (UV) detector. However, due to the lattice and thermal mismatch between the AlGaN and the underlying substrate under existing mainstream heteroepitaxial growth methods, the large density of defects, e.g., point defects, screw dislocations, and edge dislocations, has hindered the performances of AlGaN‐based solar‐blind UV photodetectors. A short superlattice polarization‐induced P‐type doping growth technique is used to fabricate a high‐performance AlGaN‐based back‐illuminated solar‐blind UV p‐i‐n photodetector (PD) fabricated on sapphire substrates. The back‐illuminated AlGaN UV‐PD shows a high external quantum efficiency of 70.2%. The peak responsivity (R) reaches 123 mA W−1 at −5 V with a wavelength of 217 nm. Meanwhile, the dark current density is 2.21 × 10−8 A cm−2. Additionally, the UV/visible rejection ratio for the detectors exceeds four orders of magnitude, and the detectivity (D*) is calculated to be 6.7 × 1012 cm Hz1/2 W−1. The device performance parameters can be attributed to the quality of the epilayer and heterojunctions. This technology provides new ideas for nitride semiconductor materials, further bringing a breakthrough in a wide‐bandgap electronics device.

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“…R was presented as a function of EQE that could be denoted as [ 11 ]

R = \frac{J_{\text{ph}}}{P_{\text{in}}} = \text{EQE} \frac{\lambda q}{h c}

D^{*} = \frac{A^{\frac{1}{2}} R}{\left(\left(\right. 2 q I_{\text{dark}} \left.\right)\right)^{\frac{1}{2}}}

…”

Section: Resultsmentioning

confidence: 99%

AlGaN‐Based Solar‐Blind Ultraviolet Detector with a Response Wavelength of 217 nm

Zhang,

Zheng,

Cheng

et al. 2023

Physica Status Solidi (a)

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show abstract

“…These SBHs from the C-V relation are similar to those from the inhomogeneity model, but larger than those from the I-V method. [34][35][36] This characteristic is related to the inhomogeneity of Schottky barriers. 33 To examine S-parameter (dΦ B /dΦ M ), namely, the relationship between Φ B and Φ M is plotted in Fig.…”

Section: Resultsmentioning

confidence: 99%

Inhomogeneous Barrier Height Characteristics of n-Type AlInP for Red AlGaInP-Based Light-Emitting Diodes

Cha¹,

Lee²,

Sim³

et al. 2022

ECS J. Solid State Sci. Technol.

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For micro-light-emitting diode (LED)-based display applications, such as virtual reality and augmented reality, high-performance Ohmic contacts (namely, the improvement of current injection efficiency) is vital to the realization of high-efficiency micro-LEDs. The surface Fermi level pinning characteristics could be comprehended in terms of the relation between work function of metals (ΦM) and Schottky barrier height (SBH, ΦB). In this study, we have investigated the surface Fermi level pinning characteristics of (001) n-AlInP surfaces by employing Schottky diodes with different metals. With an increase in the temperature, ΦB increases linearly and ideality factors (n) decreases. This behavior is related to the barrier height inhomogeneity. Inhomogeneity-model-based ΦB is evaluated to be in the range of 0.86 – 1.30 eV, which is dependent on the metal work functions and are similar to those measured from capacitance-voltage relation. Further, The S-parameter, the relation between B and M (dB/dM), is 0.36. This is indicative of the partial pinning of the surface Fermi level at the surface states placed at 0.95 eV below the conduction band. Furthermore, it is also shown that (NH4)2S-passivation results in an increases the mean SBH and the S-parameter (e.g., 0.52).

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Section: Measurement Results For Graphene/algan Sbpdmentioning

confidence: 99%

Graphene/AlGaN Schottky barrier photodiodes and its application for array devices

Nakagawa

Okauchi

Sano

et al. 2022

Jpn. J. Appl. Phys.

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.This study evaluated the characteristics of graphene/AlGaN Schottky barrier photodiodes using graphene as a transparent electrode film and AlGaN as a light absorbing sensor layer. It was found that the Schottky barrier height of graphene/AlGaN ranged within 1.2–1.7 eV depending on the Al composition ratio. By forming an array of photodiodes, an 8x8-pixels ultraviolet image sensor was fabricated.

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Determination of Schottky barrier height of graphene electrode on AlGaN/GaN heterostructure

Cited by 8 publications

References 40 publications

AlGaN‐Based Solar‐Blind Ultraviolet Detector with a Response Wavelength of 217 nm

AlGaN‐Based Solar‐Blind Ultraviolet Detector with a Response Wavelength of 217 nm

Inhomogeneous Barrier Height Characteristics of n-Type AlInP for Red AlGaInP-Based Light-Emitting Diodes

Graphene/AlGaN Schottky barrier photodiodes and its application for array devices

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