2002
DOI: 10.1016/s1359-835x(02)00157-4
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Determination of residual stresses in SiC monofilament reinforced metal-matrix composites using Raman spectroscopy

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Cited by 26 publications
(9 citation statements)
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“…[38] Thus, we put forward biaxial stress approximation with σ z =0. In backscattering geometry (incident and scattering light along z axis), considering axis-symmetrical character of the fiber cross sections, we suggest σ x =σ y , τ xy =τ xz =τ yz =0.…”
Section: Crystalline Siliconmentioning
confidence: 99%
See 1 more Smart Citation
“…[38] Thus, we put forward biaxial stress approximation with σ z =0. In backscattering geometry (incident and scattering light along z axis), considering axis-symmetrical character of the fiber cross sections, we suggest σ x =σ y , τ xy =τ xz =τ yz =0.…”
Section: Crystalline Siliconmentioning
confidence: 99%
“…Raman spectroscopy has been applied successfully to characterize SiC crystal polytypes, polymer fibers, polymeric precursor SiC fiber, CVD SiC fiber, as well as residual stress in ceramic matrix composites and TMCs . Previous studies on thermal residual stresses of CVD SiC fiber in a matrix used the deformation of carbon coating as calibration, which can only obtain average stress in axial direction of the fibers. The complicated microstructure of CVD SiC fibers contributes to excellent performance, while it also leads to complicated thermal residual stresses inside the fibers.…”
Section: Introductionmentioning
confidence: 99%
“…1). In SiC fibre, it is reported that SiC nano-crystals with the grain sizes of 1 to 3 nm are embedded in a continuum of SiO x C y (x + y = 4) amorphous phase [9] and thus would be less robust against chemical contamination as compared to SiC monofilament fibres [10].…”
Section: Methodsmentioning
confidence: 99%
“…After milling 40 h graphite, quartz and silicon have been completely amorphous and Fe3Si appeared which resulted from the formation of iron and silicon during the process of collision of grinding balls. It can be seen from Figure 5 that the silicon crystal and silicon carbide crystals were synthesized when the sample after milling 20h was treated under the condition of 2.5GPa, 873K and 2.5GPa,1273K [2][3][4][5][6],respectively (the keeping time of HPHT is 30mins). But the crystallization is not completed which due to the shorter time is kept under the condition of high temperature and high pressure.…”
Section: A the Amorphous And Characterization Of Samples Under High-mentioning
confidence: 99%