Determination of residual stresses in Pb(Zr0.53Ti0.47)O3 thin films with Raman spectroscopy

Xu, Wei; Lu, Douding; Zhang, Tong‐Yi

doi:10.1063/1.1426271

Cited by 61 publications

(38 citation statements)

References 15 publications

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“…In order to be able to perform local/micro scale mechanical characterization, many techniques have been developed, such as nanoindentation, uniaxial tensile testing of freestanding films, beam bending and bulge testing, etc (Hemandez et al 2002;Kucheyev et al 2000;Baker and Nix 1994;Shull and Spaepen 1996;Zhang TY and Xu 2002;Zheng et al 2000;Xu et al 2001;Fang and Wickert 1996;Brozen 1994;Vinci and Vlassak 1996).…”

Section: Methodsmentioning

confidence: 99%

“…Most of them are mainly mechanics-based, such as nanoindentation (Oliver and Pharr 1992;Taylor 1991;Vlassak et al 1997;Baker and Nix 1994;De Boer and Gerberich 1996;Zhang TY et al 1999), uniaxial tensile testing of freestanding films (Mearini et al 1993;Brotzen 1994), micro-cantilever bending (Weihs et al 1988;Najafi and Suzuki 1989;Schweitz 1992;Schull and Spaepen 1996), and bulge testing (Vlassak and Nix 1992;Vinci and Nix 1996;Ziebart et al 1998). Others are mainly based on optical (Sharpe et al 1997;Espinosa 2003), X-ray scattering (Xu et al 2001) and laser-acoustic methods (Hernandez et al 2002) etc. The microbridge testing technique presented in this section is essentially a mechanical method.…”

Section: Introductionmentioning

confidence: 99%

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Residual Stress and Fracture of PECVD Thick Oxide Films for Power MEMS Structures and Devices

Zhang¹

2007

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Public reporting burden for this collection of information is estimated to average 1 hour per response, including the time for reviewing instructions, seerching data sources, gathering and maintaining the data needed, and completing and reviewing the collection of information. Send comments regarding this burden estimate or any other aspect of this collection of information, including suggestions for reducing this burden to Washington Headquarters Service, Directorate for Information Operations and Reports, 1215 Jefferson Davis Highway, Suite 1204, Arlington, VA 22202-4302, and SUPPLEMENTARY NOTES14. ABSTRACT Plasma enhanced chemical vapor deposited (PECVD) silicon oxide (SiOx) is the most commonly used interlayer dielectric (ILD) in MEMS devices and structures. In this project, PECVD SiOx is chosen as an example for the systematic study of mechanical behavior and underlying casual mechanisms of amorphous thin films for MEMS applications, which are generally less well understood because of the complex interplay among the deformation mechanisms. In this project, PECVD SiO, is chosen as an example for the systematic study of mechanical behavior and underlying causal mechanisms of amorphous thin films for MEMS applications, which are generally less well understood because of the complex interplay among the deformation mechanisms. SUBJECT TERMSMechanical behaviors of the PECVD SiOx thin films are probed at 1) different size scales (from wafer level down to micro/nano-scale, and different lengthscale within each realm); 2) different temperatures (from room temperature up to 1100 0C); and 3) with a combination of different experimental techniques (such as substrate curvature measurements, nanoindentation tests, and a novel "microbridge testing" technique, etc.). A broad range of mechanical analysis is covered, including film stress and related material properties changes, elastic properties, plastic properties (both time-independent and time-dependent), deformation mechanisms (both at room temperature and elevated temperatures).Wherever applicable, materials analysis techniques such as SEM, AFM, FTIR, XRD, and SIMS were employed to strengthen the discussions on the structureproperties relationship and the causal mechanisms of the mechanical responses of the PECVD SiOx. These experiments reveal various interesting arid disiirictive characteristics of the mechanical responses of the PECVD SiOx thin films, and the microstructural causal mechanisms for each of them are analyzed in depth.The outcome of this work will provide a comprehensive characterization of the mechanical responses of the PECVD SiOx thin films under different thermal conditions, stress levels, size scales, and in both elastic and plastic regions. In addition, both new experimental methodologies and theoretical models for data 3 analysis are resulted, which can be readily applied to a wide variety of thin film materials for various different applications. Last but not least, the physical causal mechanisms for the experimental results are elucidated, ...

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Residual Stress and Fracture of PECVD Thick Oxide Films for Power MEMS Structures and Devices

Zhang¹

2007

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“…4 To accurately estimate residual stress/strain in GaN thin films, micro-Raman spectroscopy has been extensively implemented with high spatial resolution for its simplicity and non-destructive nature. 5 Thus, precise phonon deformation potentials (PDPs), which relate Raman shift or split to stress, 6 are required. Although theoretical 7,8 and experimental works 7,[9][10][11][12][13][14][15] were reported, there is a considerable discrepancy among the reported figures.…”

Section: Introductionmentioning

confidence: 99%

Phonon deformation potentials of hexagonal GaN studied by biaxial stress modulation

Deng

Wang

et al. 2011

AIP Advances

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In this work, a biaxial stress modulation method, combining the microfabrication technique, finite element analysis and a weighted averaging process, was developed to study piezospectroscopic behavior of hexagonal GaN films, epitaxially grown by metalorganic chemical vapor deposition on c-sapphire and Si (111) substrates. Adjusting the size of patterned islands, various biaxial stress states could be obtained at the island centers, leading to abundant stress-Raman shift data. With the proposed stress modulation method, the Raman biaxial stress coefficients of $E_2^H$E2H and A1 (LO) phonons of GaN were determined to be 3.43 cm-1/GPa and 2.34 cm-1/GPa, respectively.

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“…Lead zirconate titanate ͑PZT͒ films are being used in electronic devices and microelectromechanical systems, where the reliability depends on the residual stresses in the film. 5,6 A surface stress of 117 MPa after cooling from 650°C to room temperature has been determined using x-ray diffraction for PZT films ͑1 m thick, suffix 1͒ on Si substrates ͑525 m thick, suffix 2͒. 5,6 A calculation of the stresses using the relationships presented above yields then 2,surface ϭ0.4 MPa, 2,interface ϭϪ0.9 MPa and 1,interface ϭ117 MPa.…”

mentioning

confidence: 99%

Stress profile and thermal expansion of layered materials determined from surface stresses

Malzbender¹

2004

Applied Physics Letters

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A simple method of inferring the stress profile and the effective difference in thermal expansion or strain in an unconstrained elastic multilayer system from a measurement of a limited number of surface stresses as obtained for example using x-ray diffraction or Raman spectroscopy is outlined. Explicit relationships are given for bilayered systems. The analysis procedure is exemplified for literature data of electronics materials, solid oxide fuel cells and thermal barrier systems. Following the outlined procedure, a determination of the stress profile and difference in thermal expansion for composites of alternating layers is also possible. © 2004 American Institute of Physics. ͓DOI: 10.1063/1.1759773͔ Layered materials find widespread use in electronic, magnetic, optical, and structural components. Such components can be subjected to residual stresses due to intrinsic processes, such as sintering or crystallization, mismatch in thermal expansion coefficient or mechanical loading. Theories to relate stress, strain and curvature to the mechanical and thermal loading have been established for isotropic materials, bilayered, 1 multilayered composites 2 and materials with property gradients.3 These theories can be used to determine the difference in strain or thermal expansion as well as the residual stresses in a layered composite from the change in deflection or curvature.Residual stresses in the surface of coated and layered materials are often assessed using Raman spectroscopy or x-ray diffraction.4,5 However, a determination of the stress profile requires a large number of measurements. In the current letter it is shown how the stress profile can be determined from a limited number of measurements. Only the more common cases of bilayer ͑coating on a substrate͒ and trilayer composites are analyzed in detail. However, following the outlined procedure the stress profile and thermal expansion for composites of alternating layers can be determined.It is assumed that the stress is measured in the surface of layer 1. It has to be considered that the stress is only representative of the surface if the analyzed depth is small compared to the layer thickness or the stress is relatively constant over the layer thickness, which is the case if the film thickness is much smaller than the substrate thickness. All stresses are in the plane of the laminate. The stress in the surface of layer 2, 2,surface , in layer 2 next to the interface to layer 1, 2,interface , and in layer 1 next to the interface to layer 2, 1,interface , follow from the general relationships for the stress in multilayered composites where t is the thickness and E the elastic modulus ͑if the specimen is a plate E/(1Ϫ 2 ) has to be substituted͒. Since the stress can be a result of differences in thermal expansion but also intrinsic, growth related, the difference in strain is considered. If the strain is a result of thermal expansion ⑀ ϭ␣⌬T and ⌬⑀ϭ⌬␣⌬T. Defining the strain in layer two as ⑀ 2 ϭ⑀ 1 ϩ⌬⑀ 1,2 yieldsHere E and t are the average values during th...

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Determination of residual stresses in Pb(Zr0.53Ti0.47)O3 thin films with Raman spectroscopy

Cited by 61 publications

References 15 publications

Residual Stress and Fracture of PECVD Thick Oxide Films for Power MEMS Structures and Devices

Residual Stress and Fracture of PECVD Thick Oxide Films for Power MEMS Structures and Devices

Phonon deformation potentials of hexagonal GaN studied by biaxial stress modulation

Stress profile and thermal expansion of layered materials determined from surface stresses

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