Determination of relative sensitivity factors for trace element analysis of solar cell silicon by fast-flow glow discharge mass spectrometry

Determination of trace elements in high purity alumina powder by helium enhanced direct current glow discharge mass spectrometry

“…The higher gas flow resulting from adding 100 mL min -1 He to 400 mL min -1 Ar discharge gas had a rather small effect on the RSF values of Si, Mg, Cu, Zn and Ga, while Na and Cr were strongly affected. This again highlights the need for the RSF values determined from the reference materials of the same matrix for accurate quantitative concentrations, in accordance with the findings of [32]. Therefore,…”

Chemical bulk properties of multicrystalline silicon ingots for solar cells cast in silicon nitride crucibles

“…The accuracy in the measurements is estimated to be approximately 10% [11]. The measurements of the different ingots, as well as repetitions of measurements on the same ingots, have been performed in different series.…”

Cz-Silicon Produced from Solar Grade and Recycled Materials. Part I: Bulk Properties and Formation of As-Grown Defects

“…Four point probe (FPPs) method for resistivity measurement was performed on slabs after rapid thermal processing to eliminate the detrimental effect of oxygen thermal donors which usually increase resistivity in p-type silicon. Glow discharge mass spectrometry (GDMS) [16] was carried out on central parts of these slabs (S1-S7) to reveal the metallic impurity concentrations. Interstitial oxygen [O i ] and substitutional carbon [C s ] concentrations were measured by Fourier transform infrared spectroscopy (FTIR) at room temperature (where the optical absorption lines of O i and C s are at 1107 and 605 cm À1 , respectively), which were quantified according to ASTM F118-93a [17] and ASTM F1391-93 [18] standards.…”