Determination of Na acceptor level in Na+ ion-implanted ZnO single crystal

Zheng, Wenzhong; Liu, Huibin; He, Haiping; Huang, Jingyun; Chen, Lingxiang; Ye, Zhizhen

doi:10.1007/s00339-014-8819-z

Cited by 6 publications

(6 citation statements)

References 29 publications

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“…A Na-related acceptor-bound excitation–emission line centered at 3.35 eV has been reported for Na-implanted and subsequently annealed (800 °C) ZnO NRs . However, when the PL measurement is carried out at 13 K, a new violet band in the visible region appeared in the Na-implanted and subsequently annealed (600 °C) ZnO single crystal . In addition to the NBE peak and broad orange emission at ∼590 nm, a weak emission at ∼470 nm emerges in W-implanted ZnO NRs, which is commonly ascribed to W 6+ related donor level transition .…”

Section: Properties Of Implanted Znomentioning

confidence: 98%

“…148 However, when the PL measurement is carried out at 13 K, a new violet band in the visible region appeared in the Naimplanted and subsequently annealed (600 °C) ZnO single crystal. 149 In addition to the NBE peak and broad orange emission at ∼590 nm, a weak emission at ∼470 nm emerges in W-implanted ZnO NRs, which is commonly ascribed to W 6+ related donor level transition. 150 In addition to green emission, Fe-and Co-implanted NWs exhibit a new sharp and strong transitions in the red spectral region which is not observed in asgrown, Ni-or Ar-implanted ZnO NWs.…”

Section: Properties Of Implanted Znomentioning

confidence: 99%

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Efficacy of Ion Implantation in Zinc Oxide for Optoelectronic Applications: A Review

Das

Basak

2021

ACS Appl. Electron. Mater.

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Unlike the majority of the silicon-based electronic devices, optoelectronic devices are predominantly made using III–V and II–VI semiconductor compounds and their alloys because of their direct bandgap. Among these, zinc oxide (ZnO) is a multifunctional wide bandgap II–VI semiconductor material that has distinctive properties, such as large excitonic binding energy, high-sensitivity, nontoxicity, and good compatibility, which favors it to be considered for various optoelectronic applications including photoelectrochemical (PEC) water splitting, light-emitting diodes (LEDs), photovoltaics, and photodetectors. Though the research concentrated on ZnO started many decades ago, the renewed interest is rekindled only with the availability of high-quality single-crystal substrates, easy growth techniques of various nanostructures, and reports on p-type ZnO. Therefore, ZnO is being treated as a concentrated research focus during the last two decades by researchers encompassing a vast field starting from luminescent materials, energy storage and conversion, to biomedical sensors, and so on. Ion beam irradiation is a fruitful approach to modify the properties of semiconducting oxides by introducing not only impurities but also defects, strains, structural transitions, and others. The necessity of a timely in-depth and critical review of the progress on ion implantation in ZnO is the origin of this Review, which focuses on the recent implantation efforts in nanostructured ZnO thin films as well as single crystals. In the beginning, with an introduction to the general principles of ion implantation, this Review presents interactions and distribution of implantation-induced defects in ZnO. Next, comprehensive analyses on the influence of ion implantation on the optical, electrical properties, and optoelectronic applications including PEC water splitting and LEDs have been revealed. Most importantly, in each section from a “state-of-the-art” of the domain, some critical connections have been provided between the results of the theoretical simulations of the implanted ion-induced defects and the reported data, which in particular would be able to offer significant insights for both theoretical and experimental research community working with the oxide semiconductors. At the end, a summary with future directions for utilizing ion implantation for achieving ZnO thin-film-based high-performance devices has been presented. By including a sufficient breadth and depth of literature coverage in this Review, we believe that it would also tend to reveal the inconsistencies in the extant body of research.

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Section: Properties Of Implanted Znomentioning

confidence: 98%

Section: Properties Of Implanted Znomentioning

confidence: 99%

Efficacy of Ion Implantation in Zinc Oxide for Optoelectronic Applications: A Review

Das

Basak

2021

ACS Appl. Electron. Mater.

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Section: Increasing the Acceptor Concentrationmentioning

confidence: 99%

“…Ion implantation can be considered to control the doping amount. Wang et al 13 improved the uniformity of Na distribution in ZnO single crystals by using mixed energy injection of 20, 75, and 200 keV and activated the main impurity by rapid annealing. A p−n junction was formed between the implanted layer and the unimplanted layer in the ZnO single crystal (Figure 2a), which had a typical I−V curve of the p−n junction.…”

Section: Increasing the Acceptor Concentrationmentioning

confidence: 99%

ZnO with p-Type Doping: Recent Approaches and Applications

Yang,

Wang,

et al. 2023

ACS Appl. Electron. Mater.

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ZnO is a significant semiconductor material with the characteristics of direct band gap, large exciton binding energy, and easy growth of high-quality nanostructures, and it is widely used in various fields. However, obtaining high-quality p-type ZnO has become a significant obstacle to the wide application of ZnO. The research on p-ZnO started several decades ago and is regarded as the research focus. Many researchers have obtained high-quality p-ZnO by chemical vapor deposition (CVD) and physical vapor deposition (PVD). To obtain high-quality p-ZnO, researchers have used some “better” techniques to improve the crystal quality and mobility of p-ZnO, such as molecular beam epitaxy (MBE) and post-treatment. This review provides an overview of some methods for obtaining high-quality p-ZnO, such as increasing the acceptor concentration, shallowing acceptor energy levels, and reducing donor defects. In addition, we also review the applications of p-ZnO in LEDs, UV detectors, thin-film transistors, gas sensing, bionic materials, and other fields.

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“…For the Na-doping approach, the group from Zhejiang University in China have done a series of researches on Na-doping in ZnO. [91][92][93][94][95][96][97][98][99][100] They have found that non-polar faces are beneficial to the realization of p-type conduction and thus their researches mainly use the non-polar substrates. [95] Furthermore, some novel attempts have been made.…”

Section: Mono-doping Approachmentioning

confidence: 99%

Recent progress of the native defects and p-type doping of zinc oxide

Tang

et al. 2017

Chinese Phys. B

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Zinc oxide (ZnO) is a compound semiconductor with a direct band gap and high exciton binding energy. The unique property, i.e., high efficient light emission at ultraviolet band, makes ZnO potentially applied to the short-wavelength light emitting devices. However, efficient p-type doping is extremely hard for ZnO. Due to the wide band gap and low valence band energy, the self-compensation from donors and high ionization energy of acceptors are the two main problems hindering the enhancement of free hole concentration. Native defects in ZnO can be divided into donor-like and acceptorlike ones. The self-compensation has been found mainly to originate from zinc interstitial and oxygen vacancy related donors. While the acceptor-like defect, zinc vacancy, is thought to be linked to complex shallow acceptors in group-VA doped ZnO. Therefore, the understanding of the behaviors of the native defects is critical to the realization of high-efficient p-type conduction. Meanwhile, some novel ideas have been extensively proposed, like double-acceptor co-doping, acceptor doping in iso-valent element alloyed ZnO, etc., and have opened new directions for p-type doping. Some of the approaches have been positively judged. In this article, we thus review the recent (2011-now) research progress of the native defects and p-type doping approaches globally. We hope to provide a comprehensive overview and describe a complete picture of the research status of the p-type doping in ZnO for the reference of the researchers in a similar area.

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Determination of Na acceptor level in Na+ ion-implanted ZnO single crystal

Cited by 6 publications

References 29 publications

Efficacy of Ion Implantation in Zinc Oxide for Optoelectronic Applications: A Review

Efficacy of Ion Implantation in Zinc Oxide for Optoelectronic Applications: A Review

ZnO with p-Type Doping: Recent Approaches and Applications

Recent progress of the native defects and p-type doping of zinc oxide

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