Determination of Mg concentration and distribution in Mg_xZn_1−xO films for photonic devices application

Abstract

Among the transparent conductor, one of the most interesting is the Al doped MgxZn1−xO films for their electrical properties that make it very attracting for solar cell application. In this work, the Mg distribution in Al doped MgxZn1−xO films was investigated in order to find a reliable methods to determine Mg distribution. In particular, X‐ray diffraction, Auger electron spectroscopy and time of flight secondary ion mass spectrometry were used to characterize the film. Time of flight secondary ion mass spectrometry MCs+ results appear to be the most promising analytical technique. Copyright © 2014 John Wiley & Sons, Ltd.

Influence of Ga dopant on photoelectrochemical characteristic of Ga‐doped ZnO thin films deposited by sol–gel spin‐coating technique

“…All electrochemistry analyses were performed on PGSTAT12 electrochemical workstation (Autolab) via a three-electrode configuration: Ga-doped ZnO thin films use the same method of the Section Ga-doped ZnO Thin Film Deposition Process coated on Sn-doped In 2 O 3 glass substrates (sheet resistance~7 ohm/square, active dimension~1 × 1 cm 2 ) as the working electrode, a saturated calomel electrode (SCE) as the reference electrode and platinum foil as the counter electrode in 0.5 M Na 2 SO 4 aqueous solution. [4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21][22] In PEC analysis, the sunlight was simulated using a 300-W xenon lamp (Spectra Physics) and an AM 1.5G filter (Oriel), the light intensity was calibrated to 100 mW/cm 2 , the scan rate was 25 mV/s and the scan range ranging from À0.5 to 0.5 V versus SCE.…”

“…ZnO is a n-type semiconducting material with a wide optical band gap of 3.3 eV at room temperature and very stable at room temperature and even higher temperature because of its higher exciton binding energy of 60 meV. [1][2][3][4][5][6] Also, these advantages of non-toxicity, high transparency, a wide range of conductivity and cheaper process make ZnO a good candidate in replacing the commercial transparent conducting oxide material of Sn-doped In 2 O 3 and for applying in many optoelectronic devices, such as liquid crystal displays, solar cell, light-emitting diodes and photoelectrochemical (PEC) water splitting. [2][3][4][5][6][7][8][9][10][11][12] Nowadays, impurity-doped ZnO has been given more and more attention because the impurity element directly and simply enhanced conductivity, carrier concentration and optoelectronic performance of ZnO.…”

“…[1][2][3][4][5][6] Also, these advantages of non-toxicity, high transparency, a wide range of conductivity and cheaper process make ZnO a good candidate in replacing the commercial transparent conducting oxide material of Sn-doped In 2 O 3 and for applying in many optoelectronic devices, such as liquid crystal displays, solar cell, light-emitting diodes and photoelectrochemical (PEC) water splitting. [2][3][4][5][6][7][8][9][10][11][12] Nowadays, impurity-doped ZnO has been given more and more attention because the impurity element directly and simply enhanced conductivity, carrier concentration and optoelectronic performance of ZnO. [4][5][6][7][8][9][10][11][12][13] Various impurity dopants have doped ZnO such as Ni, Al, Sn, Ti and Ga. [4][5][6][7][8][9][10][11][12][13] Among these dopants, the studies of Al-doped and Ga-doped ZnO are numerous recently because group-III elements of Al and Ga are promising candidates for effectively improving the electrical and optical properties of ZnO by substituting Zn 2+ ions.…”

“…[2][3][4][5][6][7][8][9][10][11][12] Nowadays, impurity-doped ZnO has been given more and more attention because the impurity element directly and simply enhanced conductivity, carrier concentration and optoelectronic performance of ZnO. [4][5][6][7][8][9][10][11][12][13] Various impurity dopants have doped ZnO such as Ni, Al, Sn, Ti and Ga. [4][5][6][7][8][9][10][11][12][13] Among these dopants, the studies of Al-doped and Ga-doped ZnO are numerous recently because group-III elements of Al and Ga are promising candidates for effectively improving the electrical and optical properties of ZnO by substituting Zn 2+ ions. [4][5][6][7][8][9][10][11][12][13][14] However, the dopant of Al has high reactivity with oxygen during growth of Al-doped ZnO.…”

“…Preparation of ZnO-based semiconductor is versatile, including sputtering process, spray pyrolysis, hydrothermal deposition, electrochemical process and sol-gel method. [4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20] Among these methods, sol-gel method is a simple and low-cost method for thin-film coating process. [4][5][6][7][8][9][10][11][12][13][14] Recently, sol-gel method has gained more and more attraction in manufacturing Ga-doped ZnO semiconductor.…”