Determination of hole <i>g</i>-factor in InAs/InGaAs/InAlAs quantum wells by magneto-photoluminescence studies

Terent'ev, Ya. V.; Danilov, Sergey; Durnev, M. V.; Loher, Josef; Schuh, Dieter; Bougeard, Dominique; Иванов, С. В.; Ganichev, Sergey

doi:10.1063/1.4975353

Cited by 6 publications

(3 citation statements)

References 37 publications

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“…Out of six fit parameters in Table 1, g-factors have the most immediate physical interpretation. However, the g-factors values of g eff x x = 30.8 ± 0.8 and g eff y y = 17.8 ± 0.8 are considerably larger compared to the ones used in the literature, where a range of values 3-11 was reported [61][62][63][64]. We note, that comparable values of g-factor can be obtained from the qualitative model in Ref.…”

Section: Materials Parameters and Prediction For Dos And Gapless Regimesupporting

confidence: 56%

Proximity-induced gapless superconductivity in two-dimensional Rashba semiconductor in magnetic field

Babkin,

Higginbotham,

Serbyn

2024

SciPost Phys.

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Two-dimensional semiconductor-superconductor heterostructures form the foundation of numerous nanoscale physical systems. However, measuring the properties of such heterostructures, and characterizing the semiconductor in-situ is challenging. A recent experimental study by [Phys. Rev. Lett. 128, 107701 (2022)] was able to probe the semiconductor within the heterostructure using microwave measurements of the superfluid density. This work revealed a rapid depletion of superfluid density in semiconductor, caused by the in-plane magnetic field which in presence of spin-orbit coupling creates so-called Bogoliubov Fermi surfaces. The experimental work used a simplified theoretical model that neglected the presence of non-magnetic disorder in the semiconductor, hence describing the data only qualitatively. Motivated by experiments, we introduce a theoretical model describing a disordered semiconductor with strong spin-orbit coupling that is proximitized by a superconductor. Our model provides specific predictions for the density of states and superfluid density. Presence of disorder leads to the emergence of a gapless superconducting phase, that may be viewed as a manifestation of Bogoliubov Fermi surface. When applied to real experimental data, our model showcases excellent quantitative agreement, enabling the extraction of material parameters such as mean free path and mobility, and estimating gg-tensor after taking into account the orbital contribution of magnetic field. Our model can be used to probe in-situ parameters of other superconductor-semiconductor heterostructures and can be further extended to give access to transport properties.

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Section: Materials Parameters and Prediction For Dos And Gapless Regimesupporting

confidence: 56%

Proximity-induced gapless superconductivity in two-dimensional Rashba semiconductor in magnetic field

Babkin,

Higginbotham,

Serbyn

2024

SciPost Phys.

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“…[45]) and resulting parameters for the QW materials. PL data in a 4 nm InAs QW with In 0.75 Al 0.25 As barriers in the photon energy range of 0.58 to 0.72 eV [44]. We note, however, that none of these particular structures would allow one to achieve optimum conditions for routing because the lattice mismatch between the active region (QW or quantum dots) and the surrounding matrix (barriers) produces strain which increases the splitting between the heavy-and light-holes ∆ lh and thus reduces P c .…”

Section: Tmrle In Non-magnetic Qw Structuresmentioning

confidence: 99%

Transverse magnetic routing of light emission in hybrid plasmonic-semiconductor nanostructures: Towards operation at room temperature

Klompmaker,

Poddubny,

Yalcin

et al. 2021

Preprint

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We study experimentally and theoretically the temperature dependence of transverse magnetic routing of light emission from hybrid plasmonic-semiconductor quantum well structures where the exciton emission from the quantum well is routed into surface plasmon polaritons propagating along a nearby semiconductor-metal interface. In II-VI and III-V direct band semiconductors the magnitude of routing is governed by the circular polarization of exciton optical transitions, that is induced by a magnetic field. For structures comprising a (Cd,Mn)Te/(Cd,Mg)Te diluted magnetic semiconductor quantum well we observe a strong directionality of the emission up to 15% at low temperature of 20 K and magnetic field of 485 mT due to giant Zeeman splitting of holes mediated via the strong exchange interaction with Mn 2+ ions. For increasing temperatures towards roomtemperature the magnetic susceptibility decreases and the directionality strongly decreases to 4% at T = 45 K. We also propose an alternative design based on a non-magnetic (In,Ga)As/(In,Al)As quantum well structure, suitable for higher temperatures. According to our calculations, such structure can demonstrate emission directionality up to 5% for temperatures below 200 K and moderate magnetic fields of 1 T.

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“…The Zeeman splitting can differ by an order of magnitude for the in-plane and out-of-plane directions of B. 14,[41][42][43][44][45][46] (See also Refs. 47-52 for related work on quantum wires.)…”

Section: Introductionmentioning

confidence: 99%

Asymmetric g Tensor in Low-Symmetry Two-Dimensional Hole Systems

Gradl¹,

Winkler²,

Kempf³

et al. 2018

Phys. Rev. X

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The complex structure of the valence band in many semiconductors leads to multifaceted and unusual properties for spin-3/2 hole systems compared to common spin-1/2 electron systems. In particular, two-dimensional hole systems show a highly anisotropic Zeeman interaction. We have investigated this anisotropy in GaAs/AlAs quantum well structures both experimentally and theoretically. By performing time-resolved Kerr rotation measurements, we found a non-diagonal tensor g that manifests itself in unusual precessional motion as well as distinct dependencies of hole spin dynamics on the direction of the magnetic field B. We quantify the individual components of the tensor g for [113]-, [111]-and [110]-grown samples. We complement the experiments by a comprehensive theoretical study of Zeeman coupling in in-plane and out-of-plane fields B. To this end, we develop a detailed multiband theory for the tensor g. Using perturbation theory, we derive transparent analytical expressions for the components of the tensor g that we complement with accurate numerical calculations based on our theoretical framework. We obtain very good agreement between experiment and theory. Our study demonstrates that the tensor g is neither symmetric nor antisymmetric. Opposite off-diagonal components can differ in size by up to an order of magnitude. The tensor g encodes not only the Zeeman energy splitting but also the direction of the axis about which the spins precess in the external field B. In general, this axis is not aligned with B. Hence our study extends the general concept of optical orientation to the regime of nontrivial Zeeman coupling.

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Determination of hole g-factor in InAs/InGaAs/InAlAs quantum wells by magneto-photoluminescence studies

Cited by 6 publications

References 37 publications

Proximity-induced gapless superconductivity in two-dimensional Rashba semiconductor in magnetic field

Proximity-induced gapless superconductivity in two-dimensional Rashba semiconductor in magnetic field

Transverse magnetic routing of light emission in hybrid plasmonic-semiconductor nanostructures: Towards operation at room temperature

Asymmetric g Tensor in Low-Symmetry Two-Dimensional Hole Systems

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