Determination of equivalent network parameters of short-gate-length modulation-doped field-effect transistors

Fu, S.-T.; Liu, S.-M.J.; Das, M.B.

doi:10.1109/16.52422

Cited by 18 publications

(1 citation statement)

References 32 publications

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“…In this case, most electrons would not have to cross the energy barrier between the channel and the supply but would be conducted directly from source through the channel to the drain. This is a quite commonly used assumption for heterostructure devices [7]- [9].…”

Section: C)mentioning

confidence: 99%

Development of global calibration for accurate GaAs-PHEMT simulation

Brech

Grave

Selberherr

2000

IEEE Trans. Electron Devices

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Today's GaAs PHEMTs make it possible to cover applications of an extremely wide frequency range, as high as 100 GHz, with a single device type. In this paper, a set of models and calibrations for the predictive device simulation of GaAs PHEMTs is developed. The simulation setup includes a description of the device geometry. In particular, a realistic representation of the region between the ohmic contacts and the channel is included along with the fitting procedure of the simulation parameters and the necessary transport and interface models. In addition, special emphasis has been placed on a simultaneous fitting of currents and capacitances. The resulting setup allows to describe different devices without changing any nontechnology dependent parameters and thus provides a global calibration within a given device family. This capability is demonstrated by comparing the measured and simulated results of five very different devices which cover gate lengths from 120 to 500 nm, transconductances from 400 to 800 mS/mm, and ungated channel lengths from 70 to 600 nm Index Terms-Calibration, GaAs, millimeter wave devices, MODFET, semiconductor heterojunctions, simulation. I. INTRODUCTIONT HE GaAs wafer industry has experienced phenomenal growth over the last few years [1]. Today, MESFETs are the working horse for most large volume applications. As the demands on device performance are increased other transistors like pseudomorphic HEMTs (PHEMTs) and HBTs are becoming very important.PHEMTs on GaAs are able to cover an extremely wide frequency range with very good competitiveness over other technologies. Depending on the application, different requirements arise. The lower important frequency range 0.9/1.9 GHz is used for mobile communication where HEMTs are competing with various other technologies such as LDMOS, Si/Ge-HBTs, III-V-HBTs, and GaAs-MESFETs. Therefore, cheap volume production is one of the most important requirements. These HEMTs will typically have gate lengths between 500 nm and 1 m and breakdown voltages over 10 V. Frequency bands around 40 GHz for base stations lead to a trade off between RF performance and power capability. HEMTs for applications around 77 GHz and 94 GHz are usually optimized in first place with respect to their RF performance. Therefore, they typically exhibit gate lengths below 150 nm and breakdown voltages around 5 V.

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Section: C)mentioning

confidence: 99%