Determination of Electrophysical Parameters of a Semiconductor from Measurements of the Microwave Spectrum of Coaxial Probe Impedance

Reznik, A. N.; Vdovicheva, N. K.

doi:10.1134/s1063784219110240

Cited by 6 publications

(5 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Finally, it is seen that for relatively small currents the filter mostly retains the insertion loss and bandwidth values, whereas for large current both parameters deteriorate. This may be due to the changes of complex microwave impedance of ferrite material which are known to take place in semiconductors with the increase of applied constant voltage 39 . The impedance changes will affect matching conditions and increased internal losses will decrease the unloaded Q-factor.…”

Section: Resultsmentioning

confidence: 99%

Y-type hexagonal ferrite-based band-pass filter with dual magnetic and electric field tunability

Popov

Xiong

Zavislyak

et al. 2023

Sci Rep

View full text Add to dashboard Cite

This work is on the design, fabrication and characterization of a hexagonal ferrite band-pass filter that can be tuned either with a magnetic field or an electric field. The filter operation is based on a straight-edge Y-type hexagonal ferrite resonator symmetrically coupled to the input and output microstrip transmission lines. The Zn2Yfilter demonstrated magnetic field tunability in the 8–12 GHz frequency range by applying an in-plane bias magnetic field H0 provided by a built-in permanent magnet. The insertion loss and 3 dB bandwidth within this band were 8.6 ± 0.4 dB and 350 ± 40 MHz, respectively. The electric field E tunability of the pass-band of the device was facilitated by the nonlinear magnetoelectric effect (NLME) in the ferrite. The E-tuning of the center frequency of the filter by (1150 ± 90) MHz was obtained for an input DC electric power of 200 mW. With efforts directed at a significant reduction in the insertion loss, the compact and power efficient magnetic and electric field tunable Zn2Y band-pass filter has the potential for use in novel reconfigurable RF/microwave devices and communication systems.

show abstract

Section: Resultsmentioning

confidence: 99%

Y-type hexagonal ferrite-based band-pass filter with dual magnetic and electric field tunability

Popov

Xiong

Zavislyak

et al. 2023

Sci Rep

View full text Add to dashboard Cite

show abstract

“…The study has evolved the method of the microwave resonance spectroscopy of semiconductors that exceeds potential capabilities of the non-resonance Z−V-spectroscopy developed in [32,33]. The problem Z−V-spectroscopy referring to the determination of local values of main electrophysical characteristics of semiconductor is successfully resolved by means of the NS-measurements within the microwave range.…”

Section: Discussionmentioning

confidence: 99%

“…The Z−V-method developed in [32,33] is based on the measurement by using the probing station Cascade Microtech (CM) of the frequency spectrum of impedance of the probe−sample system Z( f , U) as a function of the DC voltage U applied to the probe. Electrophysical parameters of the sample are determined by solving of corresponding inverse problem.…”

Section: Impedance Measurement Accuracymentioning

confidence: 99%

“…Appearance for the last 10−15 years of commercial probing stations that operate in the frequency range up to ∼ 100 GHz (such as Cascade Microtech) allows to produce a MW-spectrometer that combines locality of NFMM with measurements in a wide frequency interval within the same device. The method of volt-impedance (Z−V) spectroscopy of semiconductors proposed in [33] and proven experimentally in [32] enables obtainment of a full set of electrophysical characteristics of semi-conductor wit micron lateral resolution by solving the three-parameter inverse problem: concentration, mobility, type of free charge carriers, specific conductivity. As a result it has become possible to carry into the MW-range such informative methods of study of semiconductors as volt-farad (C−V) diagnostics [34] and the admittance spectroscopy (AS) [35][36][37].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Microwave Resonant Spectroscopy of Semiconductors with Micrometer Resolution

Reznik

Vostokov

2022

Technical Physics

View full text Add to dashboard Cite

We have proposed and experimentally verified a local method of microwave resonant spectroscopy of semiconductors. The microwave circuit of the spectrometer based on the Cascade Microtech probe station is equipped with a coaxial resonator of special geometry. As result, the measurement accuracy of the previously developed volt-impedance spectroscopy method was greatly increased. A technique for spectrometer calibration and resonant measurements of the complex impedance of the probe-sample system has been developed. We have measured the impedance of test structures with Schottky contacts of 30-60 μm in diameter on a single-crystal GaAs wafer at several discrete frequencies in the range of 50-250 MHz. The nontrivial resistive properties of the structures are studied, which consist of the excess resistance that is 1-2 orders higher than the spreading resistance for the alternating current in the unperturbed region of the semiconductor. The discovered effect is presumably associated with the a.c. charge modulation on deep levels of the semiconductor. A model calculation of the impedance spectrum has been performed, which demonstrates a good agreement with the experimental spectra. Keywords: Microwave microscope, near field, probe, resonator, impedance, semiconductor.

show abstract

“…As a result, using a single-crystal GaAs substrate, the paper [17] demonstrated the possibility of determining the main electrophysical characteristics of a semiconductor (type of charge carriers, their concentration n and mobility µ, electrical conductivity σ , barrier band bending U c ) at a = 10−60 µm. We called the corresponding diagnostic method proposed in the paper [18] microwave volt-impedance (Z−V ) spectroscopy. In this paper Z−Vspectroscopy is applied to the study of a more complex film structure.…”

Section: Introductionmentioning

confidence: 99%

Microwave volt-impedance spectroscopy of semiconductor structure

Reznik A.N.,

Vostokov N. V.

2023

Semiconductors

View full text Add to dashboard Cite

Microwave voltage-impedance spectroscopy is used to study a semiconductor structure in the form of a doped n-GaAs film grown on a conducting n^+-GaAs substrate with a buffer sublayer. A system of concentric barrier contacts is formed on the structure surface. A technique has been developed for measuring complex impedance spectrum Z(f,U) of the sample as a function of DC bias voltage U. Spectra Z(f,U) were measured using a Cascade Microtech probe station in the frequency range 0.01-40 GHz with a lateral resolution of 15-30 μm at U=0-10 V. The main electrophysical characteristics of a semiconductor film were determined from the spectra: type, concentration and mobility of free charge carriers, electrical conductivity. An excess resistance was found in the range f=0.1-20 GHz. This effect is interpreted as the deep states (traps) recharging for two types of traps --- low-frequency l and high-frequency h with characteristic time tau_l=10-9 s, tau_h=4.2·10-11 s. A model description is proposed that explains the characteristic shape of the trap resistance spectrum, its dependence on the contact area and voltage U. Keywords: microwave band, near field, impedance, semiconductor, barier contact, deep states, electrophysical characteristics.

show abstract

Determination of Electrophysical Parameters of a Semiconductor from Measurements of the Microwave Spectrum of Coaxial Probe Impedance

Cited by 6 publications

References 11 publications

Y-type hexagonal ferrite-based band-pass filter with dual magnetic and electric field tunability

Y-type hexagonal ferrite-based band-pass filter with dual magnetic and electric field tunability

Microwave Resonant Spectroscopy of Semiconductors with Micrometer Resolution

Microwave volt-impedance spectroscopy of semiconductor structure

Contact Info

Product

Resources

About