Determination of electrical parameters of ZnO/Si heterojunction device fabricated by RF magnetron sputtering

Characterization of Eu doped ZnO micropods prepared by chemical bath deposition on p-Si substrate

“…This extraction of electrical parameters is referred to as the standard I-V method. Cheung-Cheung has also been used [63]. The parameters are determined by the following functions derived from I-V characteristics, as detailed in [63]:…”

“…Cheung-Cheung has also been used [63]. The parameters are determined by the following functions derived from I-V characteristics, as detailed in [63]:…”

“…Therefore, additive mechanisms contribute to carrier transport across heterojunctions. The high n values in the dark condition can be caused by the presence of interface states/traps, barrier inhomogeneities at the metal/semiconductor interface, series resistance, formation of an oxide interlayer, and generation-recombination events in the space charge zone [63]. The series resistance values of our heterostructures extracted by the two methods are very large, a few tens of k, compared to those reported in the literature for thin films [63] and nanorods [61] because of the irregular contact at the micropod/substrate interface.…”

“…The high n values in the dark condition can be caused by the presence of interface states/traps, barrier inhomogeneities at the metal/semiconductor interface, series resistance, formation of an oxide interlayer, and generation-recombination events in the space charge zone [63]. The series resistance values of our heterostructures extracted by the two methods are very large, a few tens of k, compared to those reported in the literature for thin films [63] and nanorods [61] because of the irregular contact at the micropod/substrate interface. The series resistance determined by the Cheung-Cheung method is higher than that determined by the standard method, which explains the difference in the electrical parameter values obtained by the two methods for our heterojunction diodes.…”

Study of the Performance of a ZnO-NiO/Si Nanocomposite-Based Solar Cell

“…17,18 The results might be induced by the obtained high resistivity and series resistance. [19][20][21] Moreover, ZnO and NiO have much lower concentrations and mobilities of carriers than silicon that rarely exceed 10 cm 2 Vs −1 . [22][23][24] Therefore, we considered as a solution doping ZnO with high concentrations of NiO.…”