Determination of electric-field gradients in semiconductors with high precision and high sensitivity

Denninger, G.; Reiser, D.

doi:10.1103/physrevb.55.5073

Cited by 38 publications

(27 citation statements)

References 19 publications

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“…Film #1 exhibits a maximal doublet splitting of 36.21 kHz (FWHM = 1.8 kHz), corresponding to an axially-symmetric NQCC of 24.14 kHz (at 296 K). This differs from a previous value of 29.72 ± 0.15 kHz obtained with DNP at 8 K [7], perhaps reflecting effects of temperature or unpaired electrons. The mean position of the perpendicular spectrum shows that the chemical shift anisotropy is zero within experimental error (Fig.…”

Section: Thecontrasting

confidence: 82%

^69,71 Ga and ¹⁴ N high‐field NMR of gallium nitride films

Yesinowski

2005

phys. stat. sol. (c)

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Gallium nitride thick films produced by HVPE having varying levels of defects have been characterized by 69,71 Ga and 14 N NMR at high field (11.7 T). The highest quality film yields the sharpest NMR peaks, from which highly accurate NMR parameters, viz. nuclear quadrupole coupling constants (NQCC), isotropic chemical shifts and chemical shift anisotropies, could be derived from studies as a function of film orientation. Poorer quality films (larger X-ray rocking curve widths) exhibit markedly broader 71 Ga satellite transition peaks with a longer T 2 relaxation time, and additional high-frequency shoulders or peaks for the central transitions. The linewidths of the 14 N doublet are also broader in the poorer quality films. The 71Ga spectra of films containing high oxygen levels show a new high-frequency central-transition peak with a very short T 1 . The high-frequency peaks in all cases may be due to Knight shifts arising from conduction electrons.

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Section: Thecontrasting

confidence: 82%

^69,71 Ga and ¹⁴ N high‐field NMR of gallium nitride films

Yesinowski

2005

phys. stat. sol. (c)

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“…Defects and Diffusion Studied Using PAC Spectroscopy [36] 67 Zn (stable) +0.150 [30] 13.3 5.0(-) [52] et al [37]. Recent measurements with implanted 111 In in high quality single crystals essentially confirm these earlier results.…”

supporting

confidence: 76%

“…Except for In in GaN and AlN, an almost complete annealing of the damage was found after annealing between 1000 and 1300 K. Generally, ZnO was found to incorporate implanted impurities much more readily than the nitride semiconductors. A comparison of the magnitude of the electric field gradient determined after the highest annealing step to the values derived from NQR measurements for the pure systems [52,53] (Table 2) indicates that in all cases the impurities are incorporated substitutionally onto the cation site. This conclusion is supported by lattice location measurements available in the literature and RBS/Channelling measurements carried out in the course of this study.…”

Section: Discussionmentioning

confidence: 99%

Implanted Impurities in Wide Band Gap Semiconductors

Kessler¹,

Lorenz²,

Vianden³

2011

DDF

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Wide band gap semiconductors, mainly GaN, have experienced much attention due to their application in photonic devices and high-power or high-temperature electronic devices. Especially the synthesis of InxGa1-xN alloys has been studied extensively because of their use in LEDs and laser diodes. Here, In is added during the growth process and devices are already very successful on a commercial scale. Indium in nitride ternary and quaternary alloys plays a special role; however, the mechanisms leading to more efficient light emission in In-containing nitrides are still under debate. Therefore, the behaviour of In in GaN and AlN, the nitride semiconductor with the largest bandgap is an important field of study. In is also an important impurity in another wide band gap semiconductor – the II-VI compound ZnO where it acts as an n-type dopant. In this context the perturbed angular correlation technique using implantation of the probe111In is a unique tool to study the immediate lattice environment of In in the wurtzite lattice of these wide band gap semiconductors. For the production of GaN and ZnO based electronic circuits one would normally apply the ion implantation technique, which is the most widely used method for selective area doping of semiconductors like Si and GaAs. However, this technique suffers from the fact that it invariably produces severe lattice damage in the implanted region, which in nitride semiconductors has been found to be very difficult to recover by annealing. The perturbed angular correlation technique is employed to monitor the damage recovery around implanted atoms and the properties of hitherto known impurity – defect complexes will be described and compared to proposed structure models.

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“…D ue to the larg e di˜erence in the coval ent ra di i of Hf ( r = 1 : 4 4 ¡ A) and N ( r = 0 : 7 5 ¡ A) the i ncorp ora ti on of Hf on N sites is very i m pro ba bl e and the i ncor-p ora ti on on G a sites ( r C = 1 : 2 6 ¡ A) i s m ore l i kel y. Thi s was conÙrm ed by recent R BS measurem ents, whi ch show tha t i m pla nted Hf f ul l y repl aces G a in G aN [37 ]. for G a i n G aN [40], further conÙrm i ng the compl ete substi tuti ona li ty of the Hf pro be. At l ow annea l i ng tem p eratures a second qua drup ol e i ntera cti on frequency ¡ Q 2 = 1 3 7 8 (9 ) MHz wi th an asym metry pa ram eter ≤ 2 = 0 : 6 3 (2 ) i s necessary to descri b e the spectra .…”

Section: I M P L Ant Ati On I N N I T R Idesmentioning

confidence: 89%